Fuji FGW35N60H Discrete igbt (high-speed v series) 600v / 35a Datasheet

http://www.fujielectric.com/products/semiconductor/
FGW35N60H
Discrete IGBT
Discrete IGBT (High-Speed V series)
600V / 35A
Features
Low power loss
Low switching surge and noise
High reliability, high ruggedness (RBSOA, SCSOA etc.)
Applications
Uninterruptible power supply
Power coditionner
Power factor correction circuit
Equivalent circuit
Maximum Ratings and Characteristics
Absolute Maximum Ratings (at TC =25°C unless otherwise specified)
Items
Collector-Emitter voltage
Gate-Emitter voltage
Pulsed Collector Current
Turn-Off Safe Operating Area
Symbols
VCES
VGES
IC@25
IC@100
ICP
-
Short Circuit Withstand Time
tSC
DC Collector Current
Maximum Power Dissipation
PD
Operating Junction Temperature Tj
Storage Temperature
Tstg
Characteristics Units
Remarks
600
V
±20
V
64
A
TC =25°C, Tj =150°C
35
A
TC =100°C, Tj =150°C
105
A
Note *1
105
A
VCE ≤600V, Tj ≤175°C
VCC ≤300V, VGE=12V
5
μs
Tj ≤150°C
230
W
TC =25°C
-40~+175
°C
-55~+175
°C
Collector
Gate
Emitter
Note *1 : Pulse width limited by Tjmax.
Electrical characteristics (at Tj = 25°C unless otherwise specified)
Items
Symbols
Conditions
Collector-Emitter Breakdown Voltage
V(BR)CES
IC = 250μA, VGE = 0V
Zero Gate Voltage Collector Current
ICES
VCE = 600V, VGE = 0V
Gate-Emitter Leakage Current
Gate-Emitter Threshold Voltage
IGES
VGE (th)
VCE = 0V, VGE = ±20V
VCE = +20V, IC = 35mA
Collector-Emitter Saturation Voltage
VCE (sat)
VGE = +15V, IC = 35A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Cies
Coes
Cres
Gate Charge
QG
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Energy
td(on)
tr
td(off)
tf
Eon
Turn-Off Energy
Eoff
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Energy
td(on)
tr
td(off)
tf
Eon
Turn-Off Energy
Eoff
VCE=25V
VGE=0V
f=1MHz
VCC = 400V
IC = 35A
VGE = 15V
Tj = 25°C
VCC = 400V
IC = 35A
VGE = 15V
RG = 10Ω
L = 500μH
Energy loss include “tail” and FWD
(FDRW15S60L) reverse recovery.
Tj = 175°C
VCC = 400V
IC = 35A
VGE = 15V
RG = 10Ω
L = 500μH
Energy loss include “tail” and FWD
(FDRW15S60L) reverse recovery.
Thermal resistance
Items
Symbols
Thermal Resistance, Junction-Ambient
Thermal Resistance Junction to Case
Rth(j-a)
Rth(j-c)
Conditions
1
Tj =25°C
Tj =175°C
Tj =25°C
Tj =175°C
Characteristics
min.
typ.
max.
600
250
10
200
4.0
5.0
6.0
1.50
1.95
1.80
2800
140
100
-
210
-
-
32
60
200
40
0.90
-
-
0.85
-
-
33
60
225
50
1.40
-
-
1.25
-
Characteristics
min.
typ.
max.
50
0.641
Unit
V
µA
mA
nA
V
V
pF
nC
ns
mJ
ns
mJ
Unit
°C/W
FGW35N60H
Discrete IGBT
http://www.fujielectric.com/products/semiconductor/
Characteristics (Representative)
Graph.1
DC Collector Current vs T
V ≥+15V, T ≤175ºC
Graph.2
Collector Current vs. switching frequency
V =+15V, T ≤175ºC, V =400V, D=0.5,
R =10Ω, T =100ºC
C
GE
j
GE
C
G
CC
C
180
100
160
140
Switching frequency fs [kHz]
Collector current IC [A]
80
Tj≤175℃
60
40
120
100
20
80
60
40
20
0
0
25
50
75
100
125
150
0
175
10
Case Temperature [°C]
20
30
40
50
60
Collector-Emitter corrent : ICE [A]
Graph.3
Typical Output Characteristics (V -I )
T =25ºC
CE
Graph.4
Typical Output Characteristics (V -I )
T =175ºC
C
CE
j
C
j
60
60
VGE=20V
50
15V
12V
10V
VGE=20V
50
15V
8V
40
40
30
30
12V
10V
IC [A]
IC [A]
8V
20
20
10
10
0
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0.0
0.5
1.0
1.5
VCE [V]
2.0
2.5
3.0
3.5
4.0
150
175
VCE [V]
Graph.6
Gate Threshold Voltage vs. T
I =35mA, V =20V
Graph.5
Typical Transfer Characteristics
V =+15V
GE
C
j
CE
8
60
7
Gate Threshold Voltage VGE(th) [V]
50
IC [A]
40
30
Tj=175℃
Tj=25℃
20
max.
6
5
typ.
4
min.
3
2
10
1
0
0
0
2
4
6
8
-50
10
-25
0
25
50
75
Tj [℃]
VGE [V]
2
100
125
FGW35N60H
Discrete IGBT
http://www.fujielectric.com/products/semiconductor/
Graph.8
Typical Gate Charge
V =400V, I =35A, T =25ºC
Graph.7
Typical Capacitance
V =0V, f=1MHz, T =25ºC
GE
CC
j
4
10
C
j
20
Cies
3
10
15
Coes
2
VGE [V]
C [pF]
Vcc=400V
10
Cres
10
1
10
5
0
10
0
-2
-1
10
0
10
B
1
10
10
0
50
100
VCE [V]
Graph.9
Typical switching time vs. I
T =175ºC, V =400V, L=500µH
V =15V,R =10Ω
CC
C
1000
Switching Times [nsec]
td(off)
100
tf
td(on)
tr
10
td(off)
td(on)
100
tf
tr
10
1
1
0
10
20
30
40
50
60
0
70
10
20
j
CC
60
CC
C
GE
G
4
4
3
3
2
50
G
C
GE
40
Graph.12
Typical switching losses vs. R
T =175ºC, V =400V, I =35A, L=500µH
V =15V
Graph.11
Typical switching losses vs. I
T =175ºC, V =400V, L=500µH
V =15V, R =10Ω
j
30
Gate Resistor Rg [Ω]
Collector Current IC [A]
Switching Energy Losses [mJ]
Switching Times [nsec]
300
GE
G
1000
Switching Energy Losses [mJ]
250
G
j
CC
GE
200
Graph.10
Typical switching time vs. R
T =175ºC, V =400V, I =35A, L=500µH
V =15V
C
j
150
Qg [nC]
Eon
Eoff
1
0
Eoff
2
Eon
1
0
0
10
20
30
40
50
60
70
0
Collector Current IC [A]
10
20
30
40
Gate Resistor Rg [Ω]
3
50
60
FGW35N60H
Discrete IGBT
http://www.fujielectric.com/products/semiconductor/
Graph.14
Transient thermal resistance of IGBT
Graph.13
Reverse biased Safe Operating Area
T ≤175ºC, V =+15V/0V, R =10Ω
j
GE
G
101
200
100
Zth(j-c) [℃/W]
Collector current IC [A]
150
100
10-1
10-2
50
10-3
10-6
0
0
200
400
600
10-5
10-4
10-3
t [sec]
800
Collector-Emitter voltage : VCE [V]
4
10-2
10-1
100
FGW35N60H
Discrete IGBT
http://www.fujielectric.com/products/semiconductor/
Outline Drawings, mm
Outview : TO-247 Package
①
②
③
CONNECTION
① GATE
② COLLECTOR
③ EMITTER
①
②
DIMENSIONS ARE IN MILLIMETERS.
③
5
FGW35N60H
Discrete IGBT
http://www.fujielectric.com/products/semiconductor/
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