FH1 The Communications Edge TM Product Information High Dynamic Range FET Product Features x 50 – 3000 MHz x Low Noise Figure x 18 dB Gain x +42 dBm OIP3 x +21 dBm P1dB x Single or Dual Supply Operation x Lead-free/Green/RoHS-compliant SOT-89 Package x MTTF > 100 years Applications x Mobile Infrastructure x CATV / DBS x W-LAN / ISM x Defense / Homeland Security Product Description Functional Diagram The FH1 is a high dynamic range FET packaged in a lowcost surface-mount package. The combination of low noise figure and high output IP3 at the same bias point makes it ideal for receiver and transmitter applications. The device combines dependable performance with superb quality to maintain MTTF values exceeding 100 years at mounting temperatures of +85 qC. The FH1 is available the enviornmentally-friendly lead-free/green/RoHS-compliant SOT-89 package. 4 Saturated Drain Current, Idss (2) Transconductance, Gm Pinch-off Voltage, Vp (3) RF Parameter 3 Pin No. 1 3 2, 4 Typical Performance (6) Units Min mA mS V 100 -3 Units Min Operational Bandwidth Test Frequency Small-signal Gain, Gss Max Stable Gain, Gmsg Output IP3 (4) P1dB Minimum Noise Figure (5) Drain Bias Gate Bias 2 Function Gate Drain Source The device utilizes a high reliability GaAs MESFET technology and is targeted for applications where high linearity is required. It is well suited for various current and next generation wireless technologies such as GPRS, GSM, CDMA, and W-CDMA. In addition, the FH1 will work for other applications within the 50 to 3000 MHz frequency range such as fixed wireless. Specifications (1) DC Electrical Parameter 1 MHz MHz dB dB dBm dBm dB V V Typ Max Parameter Units 140 120 -1.5 170 Typ Max Frequency S21 S11 S22 Output IP3 (4) Output P1dB Noise Figure Drain Bias Gate Voltage MHz dB dB dB dBm dBm dB 50 – 3000 800 17 18 23 +38 +42 +21 0.77 +5 0 Typical 900 19 -11 -10 +42 +21.8 2.7 V 1960 2140 16.5 16.5 -20 -22 -9 -9 +40 +40 +22.1 +22.1 3.1 3.0 5V @ 140mA 0 6. The device requires appropriate matching to become unconditionally stable. Parameters reflect performance in an appropriate application circuit. 1. DC and RF parameters are measured under the following conditions unless otherwise noted: 25 C with Vds = 5V, Vgs = 0V, in a 50 system. 2. Idss is measured with Vgs = 0V. 3. Pinch-off voltage is measured with Ids = 0.6 mA. 4. 3OIP measured with two tones at an output power of +5 dBm/tone separated by 10 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. 5. The minimum noise figure has S = L = OPT. Absolute Maximum Rating Parameter Operating Case Temperature Storage Temperature Drain to Source Voltage Gate to Source Voltage Gate Current RF Input Power (continuous) Junction Temperature Rating -40 to +85 qC -55 to +150 qC +7 V -6 V 4.5 mA 4 dB above Input P1dB +220 qC Ordering Information Part No. FH1-G Description High Dynamic Range FET (lead-free/green/RoHS-compliant SOT-89 package) Operation of this device above any of these parameters may cause permanent damage. Specifications and information are subject to change without notice. WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: [email protected] Web site: www.wj.com Page 1 of 7 July 2006 FH1 The Communications Edge TM Product Information High Dynamic Range FET Typical Device Data Data is shown at a biasing configuration of VDS = +5 V, IDS = 140 mA, 25 C for the unmatched device in a 50 ohm system) S11 0.8 1.0 Swp Max 6GHz 2. 0 2. 0 6 0. 1.0 0.8 DB(GMax()) 0. 4 22 0 3. 0 3. 0 4. 20 0 4. 5.0 5.0 0.2 0.2 10.0 10.0 5.0 4.0 3.0 2.0 1.0 0.8 0.6 0.4 0 0.2 10.0 10.0 5.0 4.0 3.0 2.0 1.0 0.8 0.6 0.4 0 0.2 18 16 -10. 0 -10.0 2 -0. -5. 0 -0. 14 2 -5. 0 -4 .0 -3 .0 .0 -2 Swp Min 0.01GHz -1.0 Swp Min 0.01GHz -0.8 -0 .6 Frequency (GHz) .4 -0 .0 -2 3 -1.0 2 -0.8 1 -0 .6 0 -3 .0 .4 -0 12 -4 .0 S21 and MSG (dB) 6 0. DB(|S(2,1)|) S22 Swp Max 6GHz 0. 4 Gain and Max. Stable Gain 24 Notes: The gain for the unmatched device in 50 ohm system is shown as the trace in blue color. For a tuned circuit for a particular frequency, it is expected that actual gain will be higher, as high as the maximum stable gain. The maximum stable gain is shown in the red line. The impedance plots are shown from 10 – 6000 MHz, with markers placed at 0.5 – 6.0 GHz in 0.5 GHz increments. Output IP3 vs. Temperature Output IP3 vs. Output Power 40 35 30 40 35 30 5V 100% Idss 5V 100% Idss 25 25 -40 -15 10 35 60 85 Noise Figure vs. Frequency 2.5 Noise Figure (dB) 45 OIP3 (dBm) OIP3 (dBm) 45 NF (unmatched device) 2 Minimum NF 1.5 1 0.5 0 0 2 Temperature ( C) 4 6 8 10 12 0.5 1 Output Power per tone (dBm) 1.5 2 Frequency (GHz) S-Parameters (VD = +5 V, ID = 140 mA, VG = 0 V, 25 C, calibrated to device leads) Freq (MHz) 50 250 500 750 1000 1250 1500 1750 2000 2250 2500 2750 3000 S11 (dB) S11 (ang) S21 (dB) S21 (ang) S12 (dB) S12 (ang) S22 (dB) S22 (ang) 0.00 -0.13 -0.34 -0.55 -0.83 -1.16 -1.50 -1.80 -2.03 -2.25 -2.37 -2.55 -2.62 -4.08 -19.64 -39.41 -58.33 -75.93 -93.29 -110.36 -125.64 -140.92 -155.64 -169.80 177.26 165.93 19.36 19.19 18.85 18.47 17.95 17.47 16.82 16.21 15.65 15.05 14.42 13.74 13.18 176.06 164.65 150.19 136.21 123.24 110.92 99.18 88.19 77.53 67.15 57.62 48.11 39.86 -51.05 -37.15 -31.34 -28.24 -26.22 -24.88 -23.95 -23.27 -22.81 -22.39 -22.25 -22.08 -22.01 87.96 78.37 66.75 55.74 45.25 35.22 26.69 18.17 9.87 2.11 -4.68 -11.35 -17.16 -4.38 -4.52 -4.77 -5.19 -5.77 -6.44 -7.14 -7.94 -8.84 -9.57 -10.43 -11.43 -12.30 -3.34 -11.51 -22.43 -33.05 -43.46 -53.09 -61.08 -69.92 -78.43 -86.41 -93.92 -101.88 -108.95 Noise Parameters (VD = +5 V, ID = 140 mA, VG = 0 V, 25 C, calibrated to device leads) Freq (MHz) 700 800 900 1000 1100 1200 1300 1400 NF,min (dB) 0.51 0.77 0.66 0.74 0.85 0.85 0.95 1.07 MagOpt (mag) 0.574 0.535 0.508 0.488 0.463 0.458 0.446 0.450 AngOpt (deg) 32.8 37.4 44.1 50.4 56.4 62.0 67.3 73.3 Rn 0.403 0.409 0.379 0.365 0.357 0.345 0.335 0.323 Device S-parameters and noise are available for download off of the website at: http://www.wj.com Specifications and information are subject to change without notice. WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: [email protected] Web site: www.wj.com Page 2 of 7 July 2006 FH1 The Communications Edge TM Product Information High Dynamic Range FET Reference Design: 35 MHz, 17 dB Gain 30 16.6 -19 -21 35 16.8 -20 -16 +21 +39 3.4 +5 140 4.0 40 16.8 -13 -14 Gain / Return Loss 18 3.2 DB(|S(2,1)|) (L) ID=C6 C=1000 pF ID=R7 R=390 Ohm -5 16 -10 15 -15 14 -20 13 -25 ID=R1 C=68 pF 30 35 Frequency (MHz) 40 45 ID=C3 C=1000 pF +5V ID=L1 L=470 nH NET="FH1" ID=C1 R=3.9 Ohm 0 DB(|S(2,2)|) (R) 17 25 ID=R6 R=390 Ohm DB(|S(1,1)|) (R) S11, S22 (dB) MHz dB dB dB dBm dBm dB V mA Gain (dB) Frequency Gain S11 S22 P1dB OIP3 Noise Figure Supply Voltage Supply Current 2 1 ID=C2 C=1000 pF ID=R8 L=390 nH Notes: !#"$ %&('*)# +-,,/. r 0 ! )21 3 #4 #5#5 687#:9/ ;<9/ = 5/ ;7#2=* ; 9<5 # ; #>8?2 1. 2. Components not shown in the schematic are either not used or loaded with a thru. Gain for the circuit can be adjusted slightly with the modification of the feedback resistance. Reference Design: 170 MHz, 14 dB Gain ID=R6 R=240 Ohm ID=C6 ID=R7 C=1000 pF R=240 Ohm 160 14.1 -25 -21 170 14.2 -33 -23 +21.6 +42 2.7 +5 140 2.7 +5V 180 14.3 -28 -26 Gain / Return Loss (dB) 15 DB(|S(2,1)|) (L) 2.7 DB(|S(1,1)|) (R) 0 DB(|S(2,2)|) (R) 14 -10 13 -20 12 -30 11 S11, S22 (dB) MHz dB dB dB dBm dBm dB V mA Gain (dB) Frequency Gain S11 S22 P1dB OIP3 Noise Figure Supply Voltage Supply Current -40 0.12 0.14 0.16 0.18 Frequency (GHz) 0.2 0.22 ID=C3 C=1000 pF ID=L1 L=220 nH NET="FH1" 2 ID=R1 C=24 pF 1 ID=R2 R=4 Ohm ID=C2 C=1000 pF ID=R8 L=82 nH Notes: 1. Circuit Board Material: .014” Getek ML200DSS ( r 0 ! )21 3 #4 #5#5 687#:9/ ;<9/ = 5/ ;7#2=* ; 9<5 # ; #>8?2 2. Components not shown in the schematic are either not used or loaded with a thru. Gain for the circuit can be adjusted slightly with the modification of the feedback resistance. Specifications and information are subject to change without notice. WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: [email protected] Web site: www.wj.com Page 3 of 7 July 2006 FH1 The Communications Edge TM Product Information High Dynamic Range FET Reference Design: 260 MHz, 25 dB Gain 250 25.2 -23 -12 1.8 260 25.1 -22 -14 +22.4 +39.5 1.9 +5 140 ID=C6 ID=R7 C=1000 pF R=2000 Ohm ID=R6 R=2000 Ohm ID=C1 C=1000 pF 270 24.9 -13 -17 Gain / Return Loss 26 2.1 0 25 -5 24 -10 23 -15 22 S11, S22 (dB) MHz dB dB dB dBm dBm dB V mA Gain (dB) Frequency Gain S11 S22 P1dB OIP3 Noise Figure Supply Voltage Supply Current -20 DB(|S(2,1)|) (L) DB(|S(1,1)|) (R) DB(|S(2,2)|) (R) 21 -25 0.2 0.22 0.24 0.26 Frequency (GHz) 0.28 0.3 ID=C3 C=1.8e4 pF +5V NET="FH1" ID=L1 L=220 nH 2 ID=R1 L=120 nH 1 ID=C2 C=1000 pF ID=C5 R=1e4 Ohm C=0.2 pF R=3.3 Ohm Notes: 1. Circuit Board Material: .0 !#"$ %&('*)# +-,,/. r 0 ! )21 3 #4 #5#5 687#:9/ ;<9/ = 5/ ;7#2=* ; 9<5 # ; #>8?2 2. Components not shown in the schematic are either not used or loaded with a thru. Gain for the circuit can be adjusted slightly with the modification of the feedback resistance. Reference Design: 460 MHz, 20 dB Gain ID=R6 R=750 Ohm ID=C6 C=1000 pF 450 19.9 -24 -16 1.95 460 19.9 -24 -15 +21.6 +42 2.08 +5 140 ID=R7 +5V R=750 Ohm NET="FH1" ID=C1 C=1000 pF ID=R1 L=36 nH 470 19.9 -21 -15 Gain / Return Loss 21 2.17 DB(|S(2,1)|) (L) DB(|S(1,1)|) (R) 0 DB(|S(2,2)|) (R) 20 -5 19 -10 18 -15 17 -20 16 S11, S22 (dB) MHz dB dB dB dBm dBm dB V mA Gain (dB) Frequency Gain S11 S22 P1dB OIP3 Noise Figure Supply Voltage Supply Current -25 0.34 0.38 0.42 0.46 0.5 Frequency (GHz) 0.54 0.58 ID=C3 C=1000 pF ID=L1 L=100 nH 2 1 ID=R2 L=10 nH ID=C2 C=1000 pF ID=C5 R=5000 Ohm Notes: 1. Circuit Board Material: .0 !#"$ %&('*)# +-,,/. r 0 ! )21 3 #4 #5#5 687#:9/ ;<9/ = 5/ ;7#2=* ; 9<5 # ; #>8?2 2. Components not shown in the schematic are either not used or loaded with a thru. Gain for the circuit can be adjusted slightly with the modification of the feedback resistance. Specifications and information are subject to change without notice. WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: [email protected] Web site: www.wj.com Page 4 of 7 July 2006 FH1 The Communications Edge TM Product Information High Dynamic Range FET Reference Design: 790 MHz, 19 dB Gain 746 19.2 -20 -22 790 19.4 -28 -23 +22 +41 2.3 +5 140 835 19.3 -15 -22 Gain / Return Loss 20 DB(|S(2,1)|) (L) DB(|S(1,1)|) (R) 0 DB(|S(2,2)|) (R) 19.5 -5 19 -10 18.5 -15 18 -20 17.5 -25 17 S11, S22 (dB) GHz dB dB dB dBm dBm dB V mA Gain (dB) Frequency Gain S11 S22 P1dB OIP3 Noise Figure Supply Voltage Supply Current -30 0.7 0.75 0.8 Frequency (GHz) 0.85 0.9 +5V ID=C4 C=1e4 pF ID=C6 C=100 pF ID=R6 R=560 Ohm ID=C3 C=100 pF ID=R7 R=560 Ohm ID=L1 L=27 nH NET="FH1" ID=C1 C=100 pF 2 1 ID=R2 L=2.2 nH ID=R1 L=8.2 nH ID=C2 C=100 pF ID=C5 L=10 nH Notes: 1. Circuit Board Material: .0 !#"$ %&('*)# +-,,/. 0 ! )#1 3 #4 #5#5 687#9< ;/9< = 5/ ;7#2=* ; 9<5 # ; #>8?2 2. Components not shown in the schematic are either not used or loaded with a thru. Gain for the circuit can be adjusted slightly with the modification of the feedback resistance. Reference Design: 790 MHz, 17 dB Gain 2.0 790 17.4 -19 -22 +22 +41 2.1 +5 140 835 17.4 -16 -21 Gain / Return Loss 19 DB(|S(1,1)|) (R) 2.2 DB(|S(2,1)|) (L) 0 18 -5 17 -10 16 -15 15 -20 14 -25 0.7 0.75 +5V 0.8 Frequency (GHz) 0.85 0.9 Noise Figure vs. Frequency 4 DB(|S(2,2)|) (R) 25 °C 50 °C 90 °C 3 NF (dB) 746 17.3 -19 -22 S 11, S22 (dB ) GHz dB dB dB dBm dBm dB V mA G ain (dB) Frequency Gain S11 S22 P1dB OIP3 Noise Figure Voltage Current 2 1 0 740 760 780 800 820 840 Frequency (MHz) ID=C4 C=10000 pF ID=C6 ID=R7 C=100 pF R=360 Ohm ID=C3 C=100 pF ID=R6 R=360 Ohm NET="FH1" ID=C1 C=100 pF ID=L1 L=33 nH 2 ID=R1 L=12 nH ID=C2 C=100 pF 1 ID=C5 R=10000 Ohm Notes: 1. Circuit Board Material: .0 !#"$ %&('*)# +-,,/. 0 ! )#1 3 #4 #5#5 687#9< ;/9< = 5/ ;7#2=* ; 9<5 # ; #>8?2 2. Components not shown in the schematic are either not used or loaded with a thru. Gain for the circuit can be adjusted slightly with the modification of the feedback resistance. Specifications and information are subject to change without notice. WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: [email protected] Web site: www.wj.com Page 5 of 7 July 2006 FH1 The Communications Edge TM Product Information High Dynamic Range FET Reference Design: 880 MHz, 18 dB Gain 850 17.95 -16 -23 875 17.96 -15 -22 +22 +41 1.83 +5 140 1.8 900 18.00 -15 -22 Gain / Return Loss (dB) 19 DB(|S(1,1)|) (R) 1.85 DB(|S(2,1)|) (L) 0 DB(|S(2,2)|) (R) 18 -5 17 -10 16 -15 15 -20 14 S11, S22 (dB) GHz dB dB dB dBm dBm dB V mA Gain (dB) Frequency Gain S11 S22 P1dB OIP3 Noise Figure Supply Voltage Supply Current -25 0.7 0.8 0.9 1 Frequency (GHz) +5V ID=C4 C=1e4 pF ID=C6 ID=R7 C=100 pF R=360 Ohm ID=C3 C=100 pF ID=R6 R=360 Ohm ID=L1 L=33 nH NET="FH1" 2 ID=R1 L=10 nH ID=C1 C=100 pF ID=C2 C=100 pF 1 ID=C5 R=1e4 Ohm Notes: 1. Circuit Board Material: .0 !#"$ %&('*)# +-,,/. 0 ! )#1 3 #4 #5#5 687#9< ;/9< = 5/ ;7#2=* ; 9<5 # ; #>8?2 2. Components not shown in the schematic are either not used or loaded with a thru. Gain for the circuit can be adjusted slightly with the modification of the feedback resistance. Reference Design: 800 - 2200 MHz, 15 dB Gain 900 14.9 -22 -14 +22.1 +40.7 2.4 1900 16.3 -10 -9.7 +22.4 +42.0 2.6 +5 140 2140 16.4 -18 -9.6 +22.1 +41.0 2.8 Gain / Return Loss 18 DB(|S(1,1)|) (R) DB(|S(2,1)|) (L) DB(|S(2,2)|) (R) 16 10 14 0 12 -10 10 -20 8 -30 0.75 +5V 20 Return Loss (dB) GHz dB dB dB dBm dBm dB V mA Gain (dB) Frequency Gain S11 S22 P1dB OIP3 Noise Figure Supply Voltage Supply Current 1 1.25 1.5 1.75 Frequency (GHz) 2 2.25 ID=C4 C=100 pF ID=C6 C=100 pF ID=R7 R=240 Ohm ID=C1 R=2.2 Ohm ID=R6 R=240 Ohm TLINP ID=TL1 Z0=50 Ohm L=80 mil Eeff=3.4 Loss=0 F0=0 GHz ID=C3 C=100 pF NET="FH1" ID=R1 L=2.7 nH 2 ID=L1 L=18 nH 1 ID=C2 C=100 pF C=2 pF ID=C5 L=6.8 nH Notes: R 1. Circuit Board Material: .0 A B#CDE F E G&H(I*JK#K L-MM/N O8PQBR J#S T A U#VW U#X#XE O RY8Z#E[<\ ] ^/[<] W O U_ F O ] X/` ] ^EZ#\2_*\` ] ^E] [<XE a#\ ^W EU#b8c2K 2. Components not shown in the schematic are either not used or loaded with a thru. Gain for the circuit can be adjusted slightly with the modification of the feedback resistance. 3. A dc blocking capacitor needs to be placed before C1 if dc is present at the input of the circuit. Specifications and information are subject to change without notice. WJ Communications, Inc @ Phone 1-800-WJ1-4401 @ FAX: 408-577-6621 @ e-mail: [email protected] @ Web site: www.wj.com Page 6 of 7 July 2006 FH1 The Communications Edge TM Product Information High Dynamic Range FET FH1-G Mechanical Information This package is lead-free/Green/RoHS-compliant. The plating material on the leads is NiPdAu. It is compatible with both lead-free (maximum 260 qC reflow temperature) and leaded (maximum 245 qC reflow temperature) soldering processes. Outline Drawing Product Marking The FH1-G will be marked with an “FH1G” designator. An alphanumeric lot code (“XXXX-X”) is also marked below the part designator on the top surface of the package. The obsolete tin-lead package is marked with an “FH1” designator followed by an alphanumeric lot code. Tape and reel specifications for this part are located on the website in the “Application Notes” section. MSL / ESD Rating Land Pattern ESD Rating: Value: Test: Standard: Class 1B Passes e 500V to <1000V Human Body Model (HBM) JEDEC Standard JESD22-A114 ESD Rating: Value: Test: Standard: Class IV Passes e 1000V to <2000V Charged Device Model (CDM) JEDEC Standard JESD22-C101 MSL Rating: Level 3 at +260 d C convection reflow Standard: JEDEC Standard J-STD-020 Mounting Config. Notes Parameter Rating Operating Case Temperature Thermal Resistance, Rth (1) Junction Temperature, Tj (2) -40 to +85 qC 59 qC / W 126 qC 1. The thermal resistance is referenced from the hottest part of the junction to the ground tab (pin 4). 2. This corresponds to the typical biasing condition of +5V, 140 mA at an 85 d C case temperature. A minimum MTTF of 1 million hours is achieved for junction temperatures below 160 d C. MTTF vs. GND Tab Temperature 1000 MTTF (million hrs) Thermal Specifications 1. Ground / thermal vias are critical for the proper performance of this device. Vias should use a .35mm (#80 / .0135” ) diameter drill and have a final plated thru diameter of .25 mm (.010” ). 2. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 3. Mounting screws can be added near the part to fasten the board to a heatsink. Ensure that the ground / thermal via region contacts the heatsink. 4. Do not put solder mask on the backside of the PC board in the region where the board contacts the heatsink. 5. RF trace width depends upon the PC board material and construction. 6. Use 1 oz. Copper minimum. 7. All dimensions are in millimeters (inches). Angles are in degrees. 100 10 1 60 70 80 90 100 Tab Temperature (°C) 110 Specifications and information are subject to change without notice. WJ Communications, Inc @ Phone 1-800-WJ1-4401 @ FAX: 408-577-6621 @ e-mail: [email protected] @ Web site: www.wj.com Page 7 of 7 July 2006