FH102A Ordering number : ENA1125 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Composite Transistor FH102A High-Frequency Low-Noise Amplifier, Differential Amplifier Applications Features • • • Composite type with 2 transistors contained in the MCP package currently in use, improving the mounting efficiency greatly. The FH102A is formed with two chips, being equivalent to the 2SC5226A, placed in one package. Optimal for differential amplification due to excellent thermal equilibrium and pair capability. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Symbol Conditions Ratings Unit 20 V Collector-to-Emitter Voltage VCBO VCEO 10 V Emitter-to-Base Voltage VEBO 2 V IC PC 70 mA When mounted on ceramic substrate (250mm2✕0.8mm) 1unit 300 mW When mounted on ceramic substrate (250mm2✕0.8mm) 500 mW 150 °C --55 to +150 °C Collector Current Collector Dissipation Total Dissipation Junction Temperature PT Tj Storage Temperature Tstg Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings min typ Unit max Collector Cutoff Current ICBO VCB=10V, IE=0A 1.0 μA Emitter Cutoff Current IEBO hFE VEB=1V, IC=0A 10 μA DC Current Gain Marking : 102 VCE=5V, IC=20mA 90 200 Continued on next page. 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TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 60408AB TI IM TC-00001436 No. A1125-1/6 FH102A Continued from preceding page. Parameter Symbol DC Current Gain Ratio hFE(small/large) VBE(largel-smal) fT Base-to-Emitter Voltage Diffrence Gain-Bandwidth Product Output Capacitance Cob Reverse Transfer Capacitance Cre 2 ⏐S21e⏐ 1 2 ⏐S21e⏐ 2 Forward Transfer Gain Noise Figure NF Ratings Conditions min typ VCE=5V, IC=20mA VCE=5V, IC=20mA 0.7 VCE=5V, IC=20mA VCB=10V, f=1MHz 5 0.95 1.0 mV 7 GHz 0.75 VCB=10V, f=1MHz VCE=5V, IC=20mA, f=1GHz Unit max 1.2 0.5 9 VCE=2V, IC=3mA, f=1GHz VCE=5V, IC=7mA, f=1GHz pF pF 12 dB 8 dB 1.0 1.8 dB Note) The specifications shown above are for each individual transistor except the hFE(small/large) and VBE (large-small) for which pair capability is also shown. Package Dimensions Electrical Connection 0.425 B1 B2 E2 C1 E1 C2 6 5 0.2 0.25 0.15 4 0.05 2.1 1.25 0.425 unit : mm (typ) 7026-002 1 2 3 0.65 1 : Collector1 2 : Emitter1 3 : Collector2 4 : Emitter2 5 : Base2 6 : Base1 0.9 0.2 2.0 SANYO : MCP6 hFE -- IC 3 Gain-Bandwidth Product, f T -- GHz 2 DC Current Gain, hFE f T -- IC 2 VCE=5V VCE=5V 100 7 5 3 2 10 7 10 7 5 3 2 1.0 7 5 5 3 5 7 1.0 2 3 5 7 10 2 3 Collector Current, IC -- mA 5 7 100 2 ITR10753 7 1.0 2 3 5 7 10 2 3 5 Collector Current, IC -- mA 7 100 2 ITR10754 No. A1125-2/6 FH102A Cob -- VCB 3 Reverse Transfer Capacitance, Cre -- pF 1.0 7 5 3 2 0.1 7 5 f=1MHz 2 1.0 7 5 3 2 0.1 7 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 Collector-to-Base Voltage, VCB -- V 2 3 7 0.1 10 8 6 4 2 5 7 1.0 2 3 5 7 10 2 3 ITR10756 ⏐S21e⏐ -- IC 14 2 Forward Transfer Gain, ⏐S21e⏐ -- dB VCE=5V f=1GHz 3 2 NF -- IC 12 2 Collector-to-Base Voltage, VCB -- V ITR10755 f=1GHz 12 V CE =5 V V CE =2 V Output Capacitance, Cob -- pF 2 Noise Figure, NF -- dB Cre -- VCB 3 f=1MHz 10 8 6 4 2 0 0 3 5 7 1.0 2 3 5 7 10 2 3 5 Collector Current, IC -- mA 7 100 2 ITR10757 PC -- Ta 600 3 5 7 1.0 2 3 5 7 10 2 3 Collector Current, IC -- mA 5 7 100 2 ITR10758 Collector Dissipation, PC -- mW When mounted on ceramic substrate (250mm2✕0.8mm) 500 400 300 To t 200 1u nit al di ss ip ati on 100 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 ITR10759 No. A1125-3/6 FH102A S Parameter f=100MHz, 200 to 2000MHz(200MHz Step) f=100MHz, 200 to 2000MHz(200MHz Step) j50 j100 j150 10 25 50 100 150 250 500 0.1GHz --j10 --j25 0.1GHz --j250 0.1GHz --j200 --j150 VCE=5V IC=7mA --j50 0.1GHz ±180° VCE=5V IC=20mA VCE=5V IC=20mA 8 12 VCE=5V IC=7mA 0 --60° --120° --90° ITR10761 f=100MHz, 200 to 2000MHz(200MHz Step) 2.0GHz j50 60° 2.0GHz j25 j100 j150 30° VCE=2V IC=3mA j200 j250 j10 0.1GHz 0.04 0.08 0.12 0.16 0.2 0 ±180° 20 --30° 2.0GHz 150° 16 --j100 f=100MHz, 200 to 2000MHz(200MHz Step) 120° 2.0GHz 4 --150° ITR10760 90° 30° VCE=2V 0.1GHz I =3mA C 2.0GHz 2.0GHz 2.0GHz VCE=2V IC=3mA VCE=5V IC=7mA 150° j200 j250 j10 60° VCE=5V IC=20mA 120° j25 0 90° 0.1GHz 0 10 25 50 2.0GHz VCE=5V IC=7mA --j10 VCE=5V IC=20mA VCE=2V IC=3mA --30° --150° 100 150 250 500 0.1GHz --j250 --j200 --j150 --j100 --j25 --60° --120° --90° ITR10762 --j50 ITR10763 No. A1125-4/6 FH102A S Parameters (Common emitter) VCE=5V, IC=7mA, ZO=50Ω Freq(MHz) ⏐S11⏐ ∠S11 ⏐S21⏐ ∠S21 ⏐S12⏐ ∠S12 ⏐S22⏐ ∠S22 100 0.720 --46.0 17.973 148.5 0.030 68.5 0.880 --23.6 200 0.612 --80.9 13.927 127.3 0.047 57.1 0.697 --37.6 400 0.497 --121.3 8.656 105.0 0.066 51.3 0.479 --47.6 600 0.456 --143.5 6.080 92.8 0.079 52.9 0.382 --50.5 800 0.440 --157.6 4.725 84.3 0.094 55.4 0.339 --51.8 1000 0.436 --167.5 3.864 77.0 0.110 56.8 0.323 --53.4 1200 0.434 --176.1 3.258 70.3 0.126 57.9 0.312 --55.8 1400 0.433 176.6 2.847 64.5 0.143 58.4 0.304 --58.3 1600 0.433 170.9 2.329 57.4 0.160 58.9 0.296 --62.0 1800 0.434 165.0 2.252 54.2 0.178 58.6 0.293 --65.0 2000 0.439 159.6 2.057 49.2 0.197 58.1 0.294 --68.1 ∠S11 ⏐S21⏐ ∠S21 ⏐S12⏐ ∠S12 ⏐S22⏐ ∠S22 --38.2 VCE=5V, IC=20mA, ZO=50Ω Freq(MHz) ⏐S11⏐ 100 0.481 --78.8 29.795 132.9 0.022 63.9 0.707 200 0.420 --119.2 19.008 112.2 0.033 60.8 0.470 --51.1 400 0.391 --151.6 10.416 95.4 0.052 64.7 0.296 --55.3 600 0.386 --166.4 7.084 86.6 0.071 67.2 0.236 --56.1 800 0.381 --175.9 5.407 80.1 0.092 68.4 0.213 --56.6 1000 0.382 178.2 4.401 74.1 0.114 67.8 0.208 --57.9 1200 0.385 172.1 3.701 68.5 0.134 66.8 0.204 --60.7 1400 0.388 166.7 3.217 63.6 0.156 65.6 0.202 --63.5 1600 0.390 162.1 2.839 58.8 0.176 64.0 0.199 --67.9 1800 0.391 156.7 2.534 54.3 0.197 62.4 0.197 --71.2 2000 0.394 152.1 2.319 50.1 0.219 60.6 0.197 --74.2 VCE=2V, IC=3mA, ZO=50Ω Freq(MHz) ⏐S11⏐ ∠S11 ⏐S21⏐ ∠S21 ⏐S12⏐ ∠S12 ⏐S22⏐ ∠S22 100 0.858 --32.4 9.413 157.2 0.040 72.6 0.945 --16.5 200 0.782 --60.7 8.187 138.5 0.070 59.2 0.833 --29.3 400 0.653 --101.1 5.855 113.8 0.101 44.5 0.637 --43.2 600 0.588 --126.5 4.337 98.4 0.114 39.1 0.515 --50.0 800 0.557 --143.7 3.444 87.7 0.122 38.0 0.454 --53.8 1000 0.543 --156.3 2.871 78.5 0.130 38.6 0.426 --57.1 1200 0.536 --166.8 2.446 70.5 0.137 40.3 0.407 --60.3 1400 0.533 --175.5 2.145 63.5 0.146 42.5 0.393 --63.8 1600 0.527 177.0 1.904 57.1 0.155 45.0 0.382 --68.0 1800 0.525 170.3 1.714 51.7 0.168 47.3 0.379 --72.0 2000 0.528 163.8 1.564 45.9 0.183 49.2 0.378 --75.8 No. A1125-5/6 FH102A SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. 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SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of June, 2008. Specifications and information herein are subject to change without notice. PS No. A1125-6/6