Fairchild FJA4210 Pnp epitaxial silicon transistor Datasheet

FJA4210
FJA4210
Audio Power Amplifier
•
•
•
•
High Current Capability : IC= -10A
High Power Dissipation
Wide S.O.A
Complement to FJA4310
TO-3P
1
1.Base 2.Collector 3.Emitter
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
Value
-200
Units
V
-140
V
-6
V
Collector Current (DC)
-10
A
IB
Base Current (DC)
-1.5
A
PC
Collector Dissipation (TC=25°C)
100
W
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
- 55 ~ 150
°C
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
BVCBO
Parameter
Collector-Base Breakdown Voltage
Test Condition
IC=-5mA, IE=0
Min.
-200
BVCEO
Collector-Emitter Breakdown Voltage
IC=-50mA, RBE=∞
-140
V
BVEBO
Emitter-Base Breakdown Voltage
IE=-5mA, IC=0
-6
V
ICBO
Collector Cut-off Current
VCB=-200V, IE=0
-10
µA
IEBO
Emitter Cut-off Current
VEB=-6V, IC=0
-10
µA
* DC
hFE
Current Gain
VCE=-4V, IC=-3A
Typ.
50
Max.
Units
V
180
VCE(sat)
Collector-Emitter Saturation Voltage
IC=-5A, IB=-0.5A
-0.5
Cob
Output Capacitance
VCB=-10V, f=1MHz
400
pF
V
fT
Current Gain Bandwidth Product
VCE=-5V, IC=-1A
30
MHz
* Pulse Test : PW=20µs
hFE Classification
Classification
R
O
Y
hFE
50 ~ 100
70 ~ 140
90 ~ 180
©2002 Fairchild Semiconductor Corporation
Rev. B, June 2002
FJA4210
Typical Characteristics
IB = - 300mA
-10
1000
VCE = - 4 V
-8
IB = - 200mA
-7
IB = - 150mA
-6
IB = - 100mA
o
hFE, DC CURRENT GAIN
-9
IC [A], COLLECTOR CURRENT
IB = - 250mA
IB = - 400mA
-5
IB = - 50mA
-4
-3
IB = - 20mA
-2
Ta = 25 C
o
Ta = 125 C
100
o
Ta = - 25 C
-1
10
-0.1
-0
-0
-1
-2
-3
-4
-1
-10
IC [A], COLLECTOR CURRENT
VCE [V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characterstic
Figure 2. DC current Gain
-3.0
-1
VCE(sat) [V], SATURATION VOLTAGE
VCE(sat) [V], SATURATION VOLTAGE
IC = 10 IB
-2.5
-2.0
-1.5
-1.0
IC= - 10A
-0.5
IC= - 5A
-0.0
-0.0
-0.4
-0.8
-1.2
-1.6
-0.1
o
Ta = 125 C
o
Ta = 25 C
o
Ta = - 25 C
-0.01
-0.01
-2.0
-0.1
-1
-10
IC [A], COLLECTOR CURRENT
IB [A], BASE CURRENT
Figure 3. VCE(sat) vs. IB Characteristics
Figure 4. Collector-Emitter Saturation Voltage
-10
-8
-6
o
Ta = 25 C
-4
-2
o
Ta = 125 C
o
Ta = - 25 C
-0
-0.0
t=10ms
IC (Pulse)
IC [A], COLLECTOR CURRENT
IC [A], COLLECTOR CURRENT
VCE = - 4 V
-10
IC (DC)
t=100ms
-1
o
TC = 25 C
Single Pulse
-0.1
-0.5
-1.0
-1.5
VBE [V], Base-Emitter On VOLTAGE
Figure 5. Base-Emitter On Voltage
©2002 Fairchild Semiconductor Corporation
-2.0
-10
-100
VCE [V], COLLECTOR-EMITTER VOLTAGE
Figure 6. Forward Bias Safe Operating Area
Rev. B, June 2002
FJA4210
Typical Characteristics (Continued)
PC[W], COLLECTOR POWER DISSIPATION
140
120
100
80
60
40
20
0
0
25
50
75
100
125
150
175
o
TC[ C], CASE TEMPERATURE
Figure 7. Power Derating
©2002 Fairchild Semiconductor Corporation
Rev. B, June 2002
FJA4210
Package Demensions
TO-3P
15.60 ±0.20
3.00 ±0.20
3.80 ±0.20
+0.15
1.00 ±0.20
18.70 ±0.20
23.40 ±0.20
19.90 ±0.20
1.50 –0.05
16.50 ±0.30
2.00 ±0.20
9.60 ±0.20
4.80 ±0.20
3.50 ±0.20
13.90 ±0.20
ø3.20 ±0.10
12.76 ±0.20
13.60 ±0.20
1.40 ±0.20
+0.15
5.45TYP
[5.45 ±0.30]
5.45TYP
[5.45 ±0.30]
0.60 –0.05
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation
Rev. B, June 2002
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DOME™
EcoSPARK™
E2CMOS™
EnSigna™
FACT™
FACT Quiet series™
FAST®
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
I2C™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
OPTOLOGIC®
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench®
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SLIENT SWITCHER®
SMART START™
SPM™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
TruTranslation™
UHC™
UltraFET®
VCX™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2002 Fairchild Semiconductor Corporation
Rev. H7
Similar pages