Fairchild FJD5304DTM High voltage fast switching transistor Datasheet

FJD5304D High Voltage Fast Switching Transistor
FJD5304D
High Voltage Fast Switching Transistor
Features
•
•
•
•
Built-in Free Wheeling Diode
Wide Safe Operating Area
Small Variance in Storage Time
Suitable for Electronic Ballast Application
Equivalent Circuit
C
B
D-PACK
1
1. Base 2. Collector 3. Emitter
Absolute Maximum Ratings
Symbol
E
TC = 25°C unless otherwise noted
Value
Units
VCBO
Collector-Base Voltage
Parameter
700
V
VCEO
Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
12
V
IC
Collector Current (DC)
4
A
ICP
* Collector Current (Pulse)
8
A
IB
Base Current (DC)
2
A
IBP
* Base Current (Pulse)
4
A
PC
Collector Dissipation (TC = 25°C)
30
W
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
-55 ~ 150
°C
* Pulse Test: PW = 300µs, Duty Cycle = 2% Pulsed
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
J5304D
FJD5304DTM
D-PAK
13” Dia
-
2500
J5304D
FJD5304DTF
D-PAK
13” Dia
-
2000
©2005 Fairchild Semiconductor Corporation
FJD5304D Rev. A
1
www.fairchildsemi.com
Symbol
TC = 25°C unless otherwise noted
Parameter
Conditions
Min.
Typ.
Max
Units
BVCBO
Collector-Base Breakdown Voltage
IC = 1mA, IE = 0
700
V
BVCEO
Collector-Emitter Breakdown Voltage
IC = 5mA, IB = 0
400
V
BVEBO
Emitter-Base Breakdown Voltage
IE = 1mA, IC = 0
12
V
ICES
Collector Cut-off Current
VCB = 700V, IE = 0
100
µA
ICEO
Collector Cut-off Current
VCB = 400V, IB = 0
250
µA
IEBO
Emitter Cut-off Current
VEB = 12V, IC = 0
1
mA
hFE
DC Current Gain
VCE = 5V, IC = 10mA
VCE = 5V, IC = 2.0A
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 0.5A, IB = 0.1A
0.7
V
IC = 1.0A, IB = 0.2A
1.0
V
IC = 2.5A, IB = 0.5A
1.5
V
IC = 0.5A, IB = 0.1A
1.1
V
IC = 1.0A, IB = 0.2A
1.2
V
VBE(sat)
Base-Emitter Saturation Voltage
10
8
40
IC = 2.5A, IB = 0.5A
tSTG
Storage Time
tF
Fall Time
tSTG
Storage Time
tF
Fall Time
FJD5304D Rev. A
VCLAMP=200V, IC=2.0A
IB1=0.4A, VBE(off)=-5V, L=200µH
VCC=250V, IC=2.0A
IB1=0.4A, IB2=-0.4A, TP=30µs
2
1.3
µs
0.1
2.9
0.2
V
µs
0.6
µs
µs
www.fairchildsemi.com
FJD5304D High Voltage Fast Switching Transistor
Electrical Characteristics
Figure 1. Static Characterstic
Figure 2. DC Current Gain
4.0
100
IB=300mA
o
hFE, DC CURRENT GAIN
IC [A], COLLECTOR CURRENT
3.5
3.0
IB=150mA
2.5
IB=100mA
2.0
IB=50mA
1.5
1.0
TC=125 C
o
TC= - 25 C
o
TC=25 C
10
0.5
0.0
0
2
4
6
8
10
1
0.01
12
0.1
VCE [V]. COLLECTOR-EMITTER VOLTAGE
Figure 3. Collector-Emitter Saturation Voltage
VBE(sat) [V], SATURATION VOLTAGE
VCE(sat) [V], SATURATION VOLTAGE
10
IC = 5 IB
o
TC=125 C
1
o
TC=25 C
o
TC= - 25 C
0.1
0.01
0.01
0.1
1
IC = 5 IB
o
TC= - 25 C
1
0.1
0.01
10
0.1
1
10
IC [A], COLLECTOR CURRENT
Figure 5. Resistive Load Switching Time
Figure 6. Forward Biased Safe Operating Area
10
100
tSTG
IC [A], COLLECTOR CURRENT
tSTG & tF [µs], SWITCHING TIME
o
TC=25 C
o
TC=125 C
IC [A], COLLECTOR CURRENT
1
tF
0.1
VCC=250V
Pulse IC_MAX
10
10µs
DC IC_MAX
1µs
1
1ms
0.1
o
TC = 25 C
IC= 5 IB1= - 5 IB2
Single Pulse
1
0.01
10
IC [A], COLLECTOR CURRENT
FJD5304D Rev. A
10
Figure 4. Base-Emitter Saturation Voltage
10
0.01
0.1
1
IC [A], COLLECTOR CURRENT
1
10
100
1000
VCE [V], COLLECTOR-EMITTER VOLTAGE
3
www.fairchildsemi.com
FJD5304D High Voltage Fast Switching Transistor
Typical Performance Characteristics
Figure 8. Power Derating Curve
PC [W], COLLECTOR POWER DISSIPATION
Figure 7. Reverse Biased Safe Operating Area
10
Vcc=50V, L = 1mH
IB1=1A, IB2 = -1A
IC [A], COLLECTOR CURRENT
9
8
7
6
5
4
3
2
1
0
0
100
200
300
400
500
600
700
800
900
1000
20
0
0
25
50
75
100
125
150
o
VCE [V], COLLECTOR-EMITTER VOLTAGE
FJD5304D Rev. A
40
TC [ C], CASE TEMPERATURE
4
www.fairchildsemi.com
FJD5304D High Voltage Fast Switching Transistor
Typical Performance Characteristics (Continued)
FJD5304D High Voltage Fast Switching Transistor
Mechanical Dimensions
D-PAK
Dimensions in Millimeters
FJD5304D Rev. A
5
www.fairchildsemi.com
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to
be an exhaustive list of all such trademarks.
ACEx™
ActiveArray™
Bottomless™
CoolFET™
CROSSVOLT™
DOME™
EcoSPARK™
E2CMOS™
EnSigna™
FACT™
FACT Quiet Series™
FAST®
FASTr™
FPS™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
I2C™
i-Lo™
ImpliedDisconnect™
Across the board. Around the world.™
The Power Franchise®
Programmable Active Droop™
ISOPLANAR™
LittleFET™
MICROCOUPLER™
MicroFET™
MicroPak™
MICROWIRE™
MSX™
MSXPro™
OCX™
OCXPro™
OPTOLOGIC®
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerEdge™
PowerSaver™
PowerTrench®
QFET®
QS™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
RapidConnect™
µSerDes™
SILENT SWITCHER®
SMART START™
SPM™
Stealth™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic®
TINYOPTO™
TruTranslation™
UHC™
UltraFET®
VCX™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
2. A critical component is any component of a life support device
or system whose failure to perform can be reasonably expected
to cause the failure of the life support device or system, or to
affect its safety or effectiveness.
1. Life support devices or systems are devices or systems which,
(a) are intended for surgical implant into the body, or (b) support
or sustain life, or (c) whose failure to perform when properly used
in accordance with instructions for use provided in the labeling,
can be reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I13
6
FJD5304D Rev. A
www.fairchildsemi.com
FJD5304D High Voltage Fast Switching Transistor
TRADEMARKS
Similar pages