Fairchild FJN3301R Npn epitaxial silicon transistor Datasheet

FJN3301R
FJN3301R
Switching Application (Bias Resistor Built In)
• Switching circuit, Inverter, Interface circuit, Driver Circuit
• Built in bias Resistor (R1=4.7KΩ, R2=4.7KΩ)
• Complement to FJN4301R
TO-92
1
1. Emitter 2. Collector 3. Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
Equivalent Circuit
VCBO
Parameter
Collector-Base Voltage
Value
50
Units
V
VCEO
Collector-Emitter Voltage
50
V
VEBO
Emitter-Base Voltage
10
V
IC
Collector Current
100
mA
PC
Collector Power Dissipation
300
mW
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
-55 ~ 150
°C
C
R1
B
R2
E
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
BVCBO
Parameter
Collector-Base Breakdown Voltage
Test Condition
IC=10µA, IE=0
BVCEO
Collector-Emitter Breakdown Voltage
IC=100µA, IB=0
ICBO
Collector Cut-off Current
VCB=40V, IE=0
Min.
50
Typ.
Max.
Units
V
0.1
µA
50
V
hFE
DC Current Gain
VCE=5V, IC=10mA
VCE(sat)
Collector-Emitter Saturation Voltage
IC=10mA, IB=0.5mA
20
fT
Current Gain Bandwidth Product
VCE=10V, IC=5mA
250
MHz
Cob
Output Capacitance
VCB=10V, IE=0
f=1.0MHz
3.7
pF
0.3
VI(off)
Input Off Voltage
VCE=5V, IC=100µΑ
VI(on)
Input On Voltage
VCE=0.3V, IC=20mA
R1
Input Resistor
3.2
R1/R2
Resistor Ratio
0.9
©2002 Fairchild Semiconductor Corporation
0.5
V
V
3
V
4.7
6.2
KΩ
1
1.1
Rev. A, July 2002
FJN3301R
Typical Characteristics
1000
100
VCE = 5V
V CE =0.3V
R1 = 4.7K
R1 = 4.7K
R2 = 4.7K
VI(on)[V], INPUT VOLTAGE
hFE, DC CURRENT GAIN
R2 = 4.7K
100
10
100
1
0.1
0.1
10
1
10
1000
1
10
100
IC[mA], COLLECTOR CURRENT
IC[mA], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Input On Voltage
1000
300
PC[mW], POWER DISSIPATION
IC [µA], COLLECTOR CURRENT
350
VCE = 5V
R1 = 4.7K
R2 = 4.7K
100
250
200
150
100
50
0
10
0.0
0
0.4
0.8
1.2
1.6
VI(off)[V], INPUT OFF VOLTAGE
Figure 3. Input Off Voltage
©2002 Fairchild Semiconductor Corporation
2.0
25
50
75
100
125
150
175
2.4
0
Ta[ C], AMBIENT TEMPERATURE
Figure 4. Power Derating
Rev. A, July 2002
FJN3301R
Package Demensions
TO-92
+0.25
4.58 ±0.20
4.58 –0.15
±0.10
14.47 ±0.40
0.46
1.27TYP
[1.27 ±0.20]
1.27TYP
[1.27 ±0.20]
±0.20
(0.25)
+0.10
0.38 –0.05
1.02 ±0.10
3.86MAX
3.60
+0.10
0.38 –0.05
(R2.29)
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation
Rev. A, July 2002
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Advance Information
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First Production
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Rev. I1
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