Fairchild FJN4311R Pnp epitaxial silicon transistor Datasheet

FJN4311R
FJN4311R
Switching Application (Bias Resistor Built In)
• Switching circuit, Inverter, Interface circuit, Driver Circuit
• Built in bias Resistor (R=22KΩ)
• Complement to FJN3311R
TO-92
1
1. Emitter 2. Collector 3. Base
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
VCBO
Parameter
Collector-Base Voltage
Value
-40
Units
V
VCEO
VEBO
Collector-Emitter Voltage
-40
V
Emitter-Base Voltage
-5
IC
V
Collector Current
-100
mA
PC
Collector Power Dissipation
300
mW
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
-55 ~ 150
°C
Equivalent Circuit
C
R
B
E
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
BVCBO
Parameter
Collector-Base Breakdown Voltage
Test Condition
IC= -100µA, IE=0
Min.
-40
BVCEO
Collector-Emitter Breakdown Voltage
IE= -1mA, IB=0
-40
ICBO
Collector Cut-off Current
VCB= -30V, IE=0
hFE
DC Current Gain
VCE= -5V, IC= -1mA
VCE (sat)
Collector-Emitter Saturation Voltage
IC= -10mA, IB= -1mA
Cob
Output Capacitance
VCB= -10V, IE=0
f=1MHz
fT
Current Gain Bandwidth Product
VCE= -10V, IC= -5mA
R
Input Resistor
©2002 Fairchild Semiconductor Corporation
Typ.
Max.
Units
V
-0.1
µA
V
100
600
-0.3
5.5
200
15
22
V
pF
MHz
29
KΩ
Rev. A, August 2002
FJN4311R
Package Dimensions
TO-92
+0.25
4.58 ±0.20
4.58 –0.15
±0.10
14.47 ±0.40
0.46
1.27TYP
[1.27 ±0.20]
1.27TYP
[1.27 ±0.20]
±0.20
(0.25)
+0.10
0.38 –0.05
1.02 ±0.10
3.86MAX
3.60
+0.10
0.38 –0.05
(R2.29)
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation
Rev. A, August 2002
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Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
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No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
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©2002 Fairchild Semiconductor Corporation
Rev. I1
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