MITSUBISHI Nch POWER MOSFET FK14VS-9 HIGH-SPEED SWITCHING USE FK14VS-9 OUTLINE DRAWING r Dimensions in mm 4.5 1.5MAX. 10.5MAX. 0 +0.3 –0 (1.5) 3.0 +0.3 –0.5 1.5MAX. 8.6 ± 0.3 9.8 ± 0.5 1.3 1 5 0.5 q w e wr ¡VDSS ................................................................................ 450V ¡rDS (ON) (MAX) .............................................................. 0.65Ω ¡ID ......................................................................................... 14A ¡Integrated Fast Recovery Diode (MAX.) ........150ns 2.6 ± 0.4 4.5 0.8 q GATE w DRAIN e SOURCE r DRAIN q e TO-220S APPLICATION Servo motor drive, Robot, UPS, Inverter Fluorecent lamp, etc. MAXIMUM RATINGS Symbol VDSS VGSS ID IDM IS ISM PD Tch Tstg — (Tc = 25°C) Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Conditions VGS = 0V VDS = 0V Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight Typical value Ratings 450 ±30 14 42 14 Unit V V A A A 42 150 –55 ~ +150 –55 ~ +150 A W °C °C 1.2 g Feb.1999 MITSUBISHI Nch POWER MOSFET FK14VS-9 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS (Tch = 25°C) Symbol Parameter V (BR) DSS Drain-source breakdown voltage Gate-source breakdown voltage V (BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) trr Limits Test conditions Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage ID = 1mA, VGS = 0V IG = ±100µA, VDS = 0V VGS = ±25V, VDS = 0V VDS = 450V, VGS = 0V ID = 1mA, VDS = 10V ID = 7A, VGS = 10V ID = 7A, VGS = 10V ID = 7A, VDS = 10V VDS = 25V, VGS = 0V, f = 1MHz VDD = 200V, ID = 7A, VGS = 10V, RGEN = RGS = 50Ω IS = 7A, VGS = 0V Channel to case Thermal resistance Reverse recovery time IS = 14A, dis/dt = –100A/µs Unit Min. Typ. Max. 450 ±30 — — — — — — ±10 V V µA — 2 — — — 3 0.50 3.50 1 4 0.65 4.55 mA V Ω V 4.5 — — — 7.0 1500 180 30 — — — — S pF pF pF — — — — 30 50 130 50 — — — — ns ns ns ns — 1.5 2.0 V — — — — 0.83 150 °C/W ns PERFORMANCE CURVES 160 120 80 40 0 MAXIMUM SAFE OPERATING AREA 5 3 2 DRAIN CURRENT ID (A) POWER DISSIPATION PD (W) POWER DISSIPATION DERATING CURVE 200 0 50 100 150 CASE TEMPERATURE TC (°C) 200 tw=10µs 101 7 5 3 2 100µs 100 7 5 3 2 10ms 1ms DC TC = 25°C Single Pulse 10–1 7 5 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 DRAIN-SOURCE VOLTAGE VDS (V) Feb.1999 MITSUBISHI Nch POWER MOSFET FK14VS-9 HIGH-SPEED SWITCHING USE OUTPUT CHARACTERISTICS (TYPICAL) 20 PD = 150W TC = 25°C Pulse Test DRAIN CURRENT ID (A) DRAIN CURRENT ID (A) 50 40 VGS = 20V 10V 30 OUTPUT CHARACTERISTICS (TYPICAL) VGS=20V 10V 6V TC = 25°C Pulse Test 6V 20 5V 10 16 12 5V 8 PD = 150W 4 4V 4V 0 0 10 20 30 40 0 50 16 20 ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 2.0 32 24 16 ID = 20A 14A 8 7A 0 4 8 12 16 DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (Ω) DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) 12 ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 1.6 1.2 VGS = 10V 0.8 20V 0.4 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) TRANSFER CHARACTERISTICS (TYPICAL) FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) 102 7 5 32 FORWARD TRANSFER ADMITTANCE yfs (S) TC = 25°C VDS = 50V Pulse Test 24 16 8 0 TC = 25°C Pulse Test 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 20 40 DRAIN CURRENT ID (A) 8 DRAIN-SOURCE VOLTAGE VDS (V) TC = 25°C Pulse Test 0 4 DRAIN-SOURCE VOLTAGE VDS (V) 40 0 0 4 8 12 16 20 GATE-SOURCE VOLTAGE VGS (V) TC=25°C 3 2 VDS = 10V Pulse Test 75°C 125°C 101 7 5 3 2 100 0 10 2 3 5 7 101 2 3 5 7 102 DRAIN CURRENT ID (A) Feb.1999 MITSUBISHI Nch POWER MOSFET FK14VS-9 HIGH-SPEED SWITCHING USE CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) SWITCHING CHARACTERISTICS (TYPICAL) 103 7 5 5 Ciss 103 7 5 3 2 Coss 102 7 5 3 Tch = 25°C Crss 2 f = 1MHz VGS = 0V 101 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 SWITCHING TIME (ns) CAPACITANCE Ciss, Coss, Crss (pF) 3 2 7 5 tf tr 3 2 td(on) 5 7 101 2 3 5 7 102 2 3 DRAIN CURRENT ID (A) GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) 16 VDS = 100V 200V 12 400V 8 4 0 101 7 5 20 40 60 80 SOURCE CURRENT IS (A) 40 VGS = 0V Pulse Test 32 75°C TC = 125°C 25°C 24 16 8 0 100 0 0.8 1.6 2.4 3.2 4.0 GATE CHARGE Qg (nC) SOURCE-DRAIN VOLTAGE VSD (V) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 5.0 VGS = 10V ID = 1/2ID Pulse Test GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) GATE-SOURCE VOLTAGE VGS (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C) td(off) 102 DRAIN-SOURCE VOLTAGE VDS (V) Tch = 25°C ID = 14A 3 2 100 7 5 3 2 10–1 3 2 101 100 20 0 Tch = 25°C VDD = 200V VGS = 10V RGEN = RGS = 50Ω 0 50 100 150 200 250 CHANNEL TEMPERATURE Tch (°C) VDS = 10V ID = 1mA 4.0 3.0 2.0 1.0 0 –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) Feb.1999 MITSUBISHI Nch POWER MOSFET FK14VS-9 REVERSE RECOVERY TIME trr (ns) 1.4 VGS = 0V ID = 1mA 1.2 1.0 0.8 0.6 0.4 –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) 101 7 5 101 7 5 101 3 2 Irr 2 3 5 7 102 0 Tch = 25°C 10 Tch = 150°C 7 5 2 3 5 7 103 SOURCE CURRENT dis/dt (–A/µs) REVERSE RECOVERY CURRENT Irr (A) 3 2 3 2 3 2 102 7 5 3 2 101 7 5 trr Irr Tch = 25°C Tch = 150°C 101 0 10 2 3 5 7 101 2 3 3 2 100 5 7 102 SOURCE CURRENT IS (A) DIODE REVERSE VS. SOURCE CURRENT dis/dt CHARACTERISTIC (TYPICAL) 5 5 IS = 14A V GS = 0V 3 3 VDD = 250V 2 2 trr 102 7 5 DIODE REVERSE VS. SOURCE CURRENT CHARACTERISTIC (TYPICAL) 102 103 dis/dt = –100A /µs 7 7 VGS = 0V 5 5 VDD = 250V REVERSE RECOVERY CURRENT Irr (A) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) TRANSIENT THERMAL IMPEDANCE Zth (ch–c) (°C/W) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C) REVERSE RECOVERY TIME trr (ns) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C) HIGH-SPEED SWITCHING USE TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101 7 5 3 2 100 D=1 7 5 0.5 3 0.2 2 0.1 10–1 7 5 3 2 PDM tw 0.05 0.02 0.01 T D= tw T Single Pulse 10–2 10–4 2 3 5710–3 2 3 5710–22 3 5710–12 3 57100 2 3 57101 2 3 57102 PULSE WIDTH tw (s) Feb.1999