MOS FET FKV460FP (under development) * PW Test Conditions V(BR) DSS ID = 100µA, VGS = 0V VGS = +20V VGS = –20V VDS = 40V, VGS = 0V VDS = 10V, ID = 250µA VDS = 10V, ID = 25A VGS = 10V, ID = 25A IGSS IDSS VTH Re (yfs) RDS (ON) Ciss Coss Crss t d (on) tr t d (off) tf VSD VDS = 10V f = 1.0MHz VGS = 0V min max 40 External Dimensions FM100 (full-mold) Unit 3.6 ±0.1 15.6 ±0.2 V +10 –5 100 2.3 1.3 20.0 6 2000 1200 200 ID = 25A VDD 12V RL = 0.48Ω VGS = 10V To be defined ISD = 50A, VGS = 0V 1.0 8 1.5 µA µA V S mΩ pF pF pF ns ns ns ns V 5.5 ±0.2 3.45 ±0.2 a b 3.0 Symbol (Ta=25ºC) Ratings typ 0.8 5.5 ±0.2 Electrical Characteristics 1.6 70 (Tc=25ºC) 150 –55 to +150 100µs, duty 1% Unit V V A A W ºC ºC 23.0 ±0.3 9.5±0.2 Ratings 40 ±20 ±60 ±180 3.3 Symbol VDSS VGSS ID ID (pulse)* PD Tch Tstg 1.75 ±0.15 2.15 ±0.15 (16.2) Absolute Maximum Ratings (Ta=25ºC) 0.8 +0.2 1.05 –0.1 +0.2 5.45 ±0.1 5.45 ±0.1 1.5 4.4 G D 0.65 –0.1 3.35 ±0.2 1.5 S a) Type No. b) Lot No. (Unit: mm) 73