MOS FET FKV660S 98 ID=100µA, VGS=0V VGS =+20V VGS =–10V VDS=60V, VGS=0V VDS=10V, ID=250µA VDS=10V, ID=25A VGS=10V, ID=25A IGSS IDSS VTH Re (yfs) RDS(ON) Ciss Coss Crss t d(on) tr t d(off) tf VSD VDS=10V f=1.0MHz VGS=0V ID=25A VDD=12V RL=0.48Ω VGS=10V ISD=50A, VGS=0V max 60 Unit 1.0 20 11 2500 900 150 50 400 400 300 1.0 14 1.5 µA µA V S mΩ pF pF pF ns ns ns ns V 4.44±0.2 10.2±0.3 V +10 –5 100 2.5 1.3±0.2 (1.4) V(BR)DSS min a +0.3 Test Conditions External Dimensions TO220S 10.0 –0.5 Symbol ( Ta=25ºC) Ratings typ 1.6 b (1.5) Electrical Characteristics 8.6±0.3 Unit V V A A W ºC ºC 1.27±0.2 +0.2 0.86 – 0.1 +0.3 Symbol Ratings VDSS 60 VGSS +20, –10 ±60 ID ±180 ID(pulse) PD 60(Tc=25ºC) Tch 150 Tstg –40 to +150 PW 100µs, duty 1% 3.0 –0.5 Absolute Maximum Ratings (Ta=25ºC) 2.54±0.5 +0.2 0.1– 0.1 0.4±0.1 1.2±0.2 2.54±0.5 a) Part No. b) Lot No. (Unit : mm)