Powerex Power FL12KM-12A Nch power mosfet high-speed switching use Datasheet

MITSUBISHI Nch POWER MOSFET
ARY
FL12KM-12A
MIN
RELI
.
ation change.
ecific
nal sp subject to
fi
a
t
o
re
is is nic limits a
e: Th
tr
Notice parame
Som
P
HIGH-SPEED SWITCHING USE
FL12KM-12A
OUTLINE DRAWING
Dimensions in mm
3 ± 0.3
6.5 ± 0.3
2.8 ± 0.2
φ 3.2 ± 0.2
3.6 ± 0.3
14 ± 0.5
15 ± 0.3
10 ± 0.3
1.1 ± 0.2
1.1 ± 0.2
0.75 ± 0.15
➁
2.6 ± 0.2
➀ ➁ ➂
● 10V DRIVE
● VDSS ............................................................................... 600V
● rDS (ON) (MAX) ............................................................. 0.94Ω
● ID ......................................................................................... 12A
0.75 ± 0.15
2.54 ± 0.25
4.5 ± 0.2
2.54 ± 0.25
➀ GATE
➁ DRAIN
➂ SOURCE
➀
➂
TO-220FN
APPLICATION
Switch mode power supply, Inverter fluorescent
lamp, etc.
MAXIMUM RATINGS
Symbol
(Tc = 25°C)
Ratings
Unit
VDSS
Drain-source voltage
VGS = 0V
600
V
VGSS
ID
IDM
Gate-source voltage
Drain current
Drain current (Pulsed)
VDS = 0V
±30
12
36
V
A
A
IDA
PD
Tch
Tstg
Viso
Avalanche drain current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Isolation voltage
L = 200µH
12
40
–55 ~ +150
–55 ~ +150
2000
A
W
°C
°C
V
Weight
Typical value
2.0
g
—
Parameter
Conditions
AC for 1minute, Terminal to case
Sep.1998
MITSUBISHI Nch POWER MOSFET
ARY
FL12KM-12A
MIN
RELI
.
ation change.
ecific
nal sp subject to
fi
a
t
o
re
is is nic limits a
e: Th
tr
Notice parame
Som
P
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
V (BR) DSS
Drain-source breakdown voltage
Gate-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
V (BR) GSS
IGSS
IDSS
VGS (th)
rDS (ON)
(Tch = 25°C)
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Coss
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
td (off)
tf
VSD
Rth (ch-c)
ID = 1mA, VGS = 0V
IGS = ±100µA, VDS = 0V
VGS = ±25V, VDS = 0V
VDS = 600V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 6A, VGS = 10V
ID = 6A, VGS = 10V
ID = 6A, VDS = 10V
Gate-source threshold voltage
Drain-source on-state resistance
VDS (ON)
yfs
Ciss
Crss
td (on)
tr
Limits
Test conditions
VDS = 25V, VGS = 0V, f = 1MHz
VDD = 200V, ID = 6A, VGS = 10V, RGEN = RGS = 50Ω
Turn-off delay time
Fall time
Source-drain voltage
IS = 6A, VGS = 0V
Channel to case
Thermal resistance
Unit
Min.
600
±30
—
Typ.
—
Max.
—
—
±10
V
V
µA
—
2.0
—
—
—
3.0
0.80
4.80
1
4.0
0.94
5.64
mA
V
Ω
V
—
—
—
—
8.0
1250
150
55
—
—
—
—
S
pF
pF
pF
—
—
—
—
25
45
250
90
—
—
—
—
ns
ns
ns
ns
—
1.5
2.0
V
—
—
3.13
°C/W
PERFORMANCE CURVES
tw =10µs
DRAIN CURRENT ID (A)
3
2
40
30
20
10
101
7
5
100µs
3
2
1ms
100
10ms
7
5
3
2
10–1 TC = 25°C
0
0
50
100
150
7
5
200
Single Pulse
DC
3 5 7 101 2 3 5 7 102 2 3 5 7 103 2 3
CASE TEMPERATURE TC (°C)
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
OUTPUT CHARACTERISTICS
(TYPICAL)
20
DRAIN CURRENT ID (A)
MAXIMUM SAFE OPERATING AREA
5
10
TC = 25°C
Pulse Test
16
12
VGS = 20V
10V
6V
8
5V
4
DRAIN CURRENT ID (A)
POWER DISSIPATION PD (W)
POWER DISSIPATION DERATING CURVE
50
TC = 25°C
Pulse Test
VGS = 20V
8
10V
6V
5V
6
4
2
4V
4V
0
0
4
8
12
16
20
DRAIN-SOURCE VOLTAGE VDS (V)
0
0
2
4
6
8
10
DRAIN-SOURCE VOLTAGE VDS (V)
Sep.1998
MITSUBISHI Nch POWER MOSFET
ARY
FL12KM-12A
MIN
RELI
.
ation change.
ecific
nal sp subject to
fi
a
t
o
re
is is nic limits a
e: Th
tr
Notice parame
Som
P
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
16
16A
12
12A
8
6A
4
0
0
4
8
12
16
TC = 25°C
Pulse Test
1.6
VGS = 10V
1.2
20V
0.8
0.4
0 0
10
20
2
3
5 7 101
2
3
5 7 102
GATE-SOURCE VOLTAGE VGS (V)
DRAIN CURRENT ID (A)
TRANSFER CHARACTERISTICS
(TYPICAL)
FORWARD TRANSFER ADMITTANCE
VS. DRAIN CURRENT
(TYPICAL)
20
101
TC = 25°C
VDS = 50V
Pulse Test
16
7
5
FORWARD TRANSFER
ADMITTANCE yfs (S)
DRAIN CURRENT ID (A)
2.0
TC = 25°C
Pulse Test
DRAIN-SOURCE ON-STATE
RESISTANCE rDS (ON) (Ω)
DRAIN-SOURCE ON-STATE
VOLTAGE VDS (ON) (V)
20
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
12
8
4
TC = 25°C
75°C
125°C
3
2
100
7
5
3
2
0
0
4
8
12
16
10-1
100
20
3
5 7 101
2
3
5 7 102
DRAIN CURRENT ID (A)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
SWITCHING CHARACTERISTICS
(TYPICAL)
103
7
5
TCh = 25°C
VDD = 200V
VGS = 10V
RGEN = RGS = 50Ω
7
5
3
2
Ciss
103
7
5
3
2
Coss
102
7
5
Crss
3 TCh = 25°C
2 f = 1MHZ
VGS = 0V
2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2
DRAIN-SOURCE VOLTAGE VDS (V)
SWITCHING TIME (ns)
CAPACITANCE
Ciss, Coss, Crss (pF)
2
GATE-SOURCE VOLTAGE VGS (V)
104
101
VDS = 10V
Pulse Test
3
td(off)
2
tf
102
tr
7
5
3
td(on)
2
101 0
10
2
3
5 7 101
2
3
5 7 102
DRAIN CURRENT ID (A)
Sep.1998
MITSUBISHI Nch POWER MOSFET
ARY
FL12KM-12A
MIN
RELI
.
ation change.
ecific
nal sp subject to
fi
a
t
o
re
is is nic limits a
e: Th
tr
Notice parame
Som
P
HIGH-SPEED SWITCHING USE
20
SOURCE CURRENT IS (A)
12
8
VDS = 100V
200V
400V
4
0
20
40
60
80
8
4
1.0
2.0
3.0
4.0
5.0
SOURCE-DRAIN VOLTAGE VSD (V)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
5.0
3
2
100
7
5
3
2
–50
0
50
100
3.0
2.0
1.0
0
150
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
VGS = 0V
ID = 1mA
1.2
1.0
0.8
0.6
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
VDS = 10V
ID = 1mA
4.0
CHANNEL TEMPERATURE Tch (°C)
0.4
0
GATE CHARGE Qg (nC)
VGS = 10V
7 ID = 6A
5 Pulse Test
1.4
TC = 25°C
75°C
125°C
12
0
101
10–1
VGS = 0V
Pulse Test
16
100
GATE-SOURCE THRESHOLD
VOLTAGE VGS (th) (V)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C)
20
TCh = 25°C
ID = 12A
16
0
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C)
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
TRANSIENT THERMAL IMPEDANCE Zth (ch – c) (°C/ W)
GATE-SOURCE VOLTAGE VGS (V)
GATE-SOURCE VOLTAGE
VS. GATE CHARGE
(TYPICAL)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
101
7
5 D = 1.0
3
2 0.5
100 0.2
7
5 0.1
3 0.05
2
PDM
10–1
7
5
3
2
tw
0.02
0.01
Single Pulse
T
D= tw
T
10–2 –4
10 2 3 5 710–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
PULSE WIDTH tw (s)
Sep.1998
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