MITSUBISHI Nch POWER MOSFET ARY FL16KM-6A MIN RELI . ation change. ecific nal sp subject to fi a t o re is is nic limits a e: Th tr Notice parame Som P HIGH-SPEED SWITCHING USE FL16KM-6A OUTLINE DRAWING Dimensions in mm 3 ± 0.3 6.5 ± 0.3 2.8 ± 0.2 φ 3.2 ± 0.2 3.6 ± 0.3 14 ± 0.5 15 ± 0.3 10 ± 0.3 1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15 ➁ 2.6 ± 0.2 ➀ ➁ ➂ ● 10V DRIVE ● VDSS ............................................................................... 300V ● rDS (ON) (MAX) ............................................................. 0.35Ω ● ID ......................................................................................... 16A 0.75 ± 0.15 2.54 ± 0.25 4.5 ± 0.2 2.54 ± 0.25 ➀ GATE ➁ DRAIN ➂ SOURCE ➀ ➂ TO-220FN APPLICATION Switch mode power supply, Inverter fluorescent lamp, etc. MAXIMUM RATINGS Symbol (Tc = 25°C) Ratings Unit VDSS Drain-source voltage VGS = 0V 300 V VGSS ID IDM Gate-source voltage Drain current Drain current (Pulsed) VDS = 0V ±30 16 48 V A A IDA PD Tch Tstg Viso Avalanche drain current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Isolation voltage L = 200µH 16 35 –55 ~ +150 –55 ~ +150 2000 A W °C °C V Weight Typical value 2.0 g — Parameter Conditions AC for 1minute, Terminal to case Sep.1998 MITSUBISHI Nch POWER MOSFET ARY FL16KM-6A MIN RELI . ation change. ecific nal sp subject to fi a t o re is is nic limits a e: Th tr Notice parame Som P HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol Parameter V (BR) DSS Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakage current Drain-source leakage current V (BR) GSS IGSS IDSS VGS (th) rDS (ON) (Tch = 25°C) ID = 1mA, VGS = 0V IGS = ±100µA, VDS = 0V VGS = ±25V, VDS = 0V Drain-source on-state voltage Forward transfer admittance Input capacitance Coss Output capacitance Reverse transfer capacitance Turn-on delay time Rise time td (off) tf VSD Rth (ch-c) VDS = 300V, VGS = 0V ID = 1mA, VDS = 10V ID = 8A, VGS = 10V ID = 8A, VGS = 10V ID = 8A, VDS = 10V Gate-source threshold voltage Drain-source on-state resistance VDS (ON) yfs Ciss Crss td (on) tr Limits Test conditions VDS = 25V, VGS = 0V, f = 1MHz VDD = 150V, ID = 8A, VGS = 10V, RGEN = RGS = 50Ω Turn-off delay time Fall time Source-drain voltage IS = 8A, VGS = 0V Channel to case Thermal resistance Unit Min. 300 ±30 — Typ. — Max. — — ±10 V V µA — 2.0 — — — 3.0 0.29 2.32 1 4.0 0.35 2.80 mA V Ω V — — — — 10 950 175 20 — — — — S pF pF pF — — — — 15 30 150 60 — — — — ns ns ns ns — 1.5 2.0 V — — 3.57 °C/W PERFORMANCE CURVES DRAIN CURRENT ID (A) 7 5 40 30 20 10 0 0 50 100 150 101 7 5 100µs 3 2 1ms 100 10ms 7 5 3 2 10–1 200 tw = 10µs TC = 25°C Single Pulse DC 3 5 7 101 2 3 5 7 102 2 3 5 7 103 2 3 DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) 20 TC = 25°C Pulse Test PD = 35W 40 3 2 CASE TEMPERATURE TC (°C) 50 DRAIN CURRENT ID (A) MAXIMUM SAFE OPERATING AREA 102 DRAIN CURRENT ID (A) POWER DISSIPATION PD (W) POWER DISSIPATION DERATING CURVE 50 VGS = 20V 10V 7V 30 6V 20 5V 10 TC = 25°C Pulse Test 5.5V VGS = 20V 10V 7V 6V 16 12 5V 8 4.5V 4 4V 4V 0 0 10 20 30 40 50 DRAIN-SOURCE VOLTAGE VDS (V) 0 0 4 8 12 16 20 DRAIN-SOURCE VOLTAGE VDS (V) Sep.1998 MITSUBISHI Nch POWER MOSFET ARY FL16KM-6A MIN RELI . ation change. ecific nal sp subject to fi a t o re is is nic limits a e: Th tr Notice parame Som P HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 0.5 20 8 16A 4 8A 0 4 8 12 16 0.4 20V 0.2 0.1 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) TRANSFER CHARACTERISTICS (TYPICAL) FORWARD TRANSFER ADMITTANCE VS. DRAIN CURRENT (TYPICAL) 5 4 3 32 2 24 16 8 TC = 25°C VDS = 50V Pulse Test 0 4 8 12 16 101 TC = 25°C 75°C 125°C 7 5 4 3 2 100 7 5 100 20 VDS = 10V Pulse Test 2 3 4 5 7 101 2 3 4 5 7 102 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) SWITCHING CHARACTERISTICS (TYPICAL) 104 3 7 5 2 3 2 Ciss 103 7 5 3 2 Coss 102 7 5 3 TCh = 25°C 2 f = 1MHZ VGS = 0V 101 VGS = 10V 0.3 40 0 TC = 25°C Pulse Test 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 20 FORWARD TRANSFER ADMITTANCE yfs (S) DRAIN CURRENT ID (A) 0 CAPACITANCE Ciss, Coss, Crss (pF) TC = 25°C Pulse Test 12 DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (Ω) 16 Crss 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN-SOURCE VOLTAGE VDS (V) SWITCHING TIME (ns) DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) ID = 30A td(off) 102 tf 7 5 4 3 tr 2 td(on) 101 7 5 4 3 100 TCh = 25°C VDD = 150V VGS = 10V RGEN = RGS = 50Ω 2 3 4 5 7 101 2 3 4 5 7 102 DRAIN CURRENT ID (A) Sep.1998 MITSUBISHI Nch POWER MOSFET ARY FL16KM-6A MIN RELI . ation change. ecific nal sp subject to fi a t o re is is nic limits a e: Th tr Notice parame Som P HIGH-SPEED SWITCHING USE 20 SOURCE CURRENT IS (A) VDS = 50V 100V 200V 12 8 4 0 4 8 12 16 16 8 0.8 1.6 2.4 3.2 4.0 SOURCE-DRAIN VOLTAGE VSD (V) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 5.0 3 2 100 7 5 3 2 –50 0 50 100 3.0 2.0 1.0 0 150 BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) VGS = 0V ID = 1mA 1.2 1.0 0.8 0.6 –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) VDS = 10V ID = 1mA 4.0 CHANNEL TEMPERATURE Tch (°C) 0.4 0 GATE CHARGE Qg (nC) VGS = 10V 7 ID = 8A 5 Pulse Test 1.4 TC = 125°C 75°C 25°C 24 0 101 10–1 VGS = 0V Pulse Test 32 20 GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C) 40 TCh = 25°C ID = 16A 16 0 DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) TRANSIENT THERMAL IMPEDANCE Zth (ch – c) (°C/ W) GATE-SOURCE VOLTAGE VGS (V) GATE-SOURCE VOLTAGE VS. GATE CHARGE (TYPICAL) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101 7 5 D = 1.0 3 0.5 2 100 0.2 7 5 0.1 3 2 10–1 7 5 3 2 PDM 0.05 0.02 0.01 Single Pulse tw T D= tw T 10–2 –4 10 2 3 5 710–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 PULSE WIDTH tw (s) Sep.1998