FLC107WG C-Band Power GaAs FET FEATURES • High Output Power: P1dB = 30.0dBm(Typ.) • High Gain: G1dB = 8.0dB(Typ.) • High PAE: ηadd = 36%(Typ.) • Proven Reliability • Hermetic Metal/Ceramic Package DESCRIPTION The FLC107WG is a power GaAs FET that is designed for general purpose applications in the C-Band frequency range as it provides superior power, gain, and efficiency. Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Item Condition Symbol Rating Unit Drain-Source Voltage VDS 15 V Gate-Source Voltage VGS -5 V 7.5 W Total Power Dissipation Tc = 25°C PT Storage Temperature Tstg -65 to +175 °C Channel Temperature Tch 175 °C Limit Typ. Max. Unit Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDS) should not exceed +10 volts. 2. The forward and reverse gate currents should not exceed 8.8 and -0.5 mA respectively with gate resistance of 500Ω. 3. The operating channel temperature (Tch) should not exceed 145°C. ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C) Item Saturated Drain Current Symbol IDSS Test Conditions Min. VDS = 5V, VGS = 0V - 400 600 mA Transconductance gm VDS = 5V, IDS = 250mA - 200 - mS Pinch-off Voltage Vp VDS = 5V, IDS = 20mA -1.0 -2.0 -3.5 V -5 - - V 28.5 30.0 - dBm 7.0 8.0 - dB - 36 - % - 16 20 °C/W Gate Source Breakdown Voltage VGSO Output Power at 1dB G.C.P. P1dB Power Gain at 1dB G.C.P. G1dB Power-added Efficiency ηadd Thermal Resistance Rth IGS = -20µA VDS = 10V, IDS = 0.6 IDSS (Typ.), f = 8 GHz Channel to Case CASE STYLE: WG Edition 1.1 July 1999 G.C.P.: Gain Compression Point 1 FLC107WG C-Band Power GaAs FET POWER DERATING CURVE DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE 500 6 4 VGS =0V 400 Drain Current (mA) 8 -0.5V 300 -1.0V 200 -1.5V 100 2 -2.0V 50 100 150 0 200 2 50 Pout 6 GHz 23 21 P1dB (dBm) 8 GHz 25 10 f=8GHz IDS ≈ 0.6 IDSS 6 GHz 8 GHz ηadd 40 30 20 ηadd (%) 27 8 P1dB & ηadd vs. VDS OUTPUT POWER vs. INPUT POWER 29 6 Drain-Source Voltage (V) Case Temperature (°C) VDS=10V 31 IDS ≈ 0.6 IDSS 4 50 31 P1dB 30 40 ηadd 30 29 10 19 8 12 14 16 18 20 22 9 10 Drain-Source Voltage (V) Input Power (dBm) 2 ηadd (%) 0 Output Power (dBm) Total Power Dissipation (W) 10 FLC107WG C-Band Power GaAs FET S11 S22 +j50 S21 S12 +90° +j100 +j25 2GHz 10 9 8 +j250 7 +j10 3 6 5 10 10 4 3 -j10 25 50Ω 100 180° 250 9 2GHz 4 3 2 1 SCALE FOR |S21| 8 7 .02 SCALE FOR |S12| 0 2GHz 6 5 -j250 4 3 -j25 -j100 -j50 4 5 6 2GHz 7 3 9 4 10 9 7 10 0° .04 .06 .08 -90° S11 S-PARAMETERS VDS = 10V, IDS = 250mA S21 S12 MAG ANG MAG ANG FREQUENCY (MHZ) MAG ANG 500 .945 -80.8 10.188 131.0 .024 1000 .912 -121.7 6.711 103.4 2000 .901 -154.5 3.629 3000 .897 -168.3 4000 .894 5000 S22 MAG ANG 44.6 .260 -61.5 .031 21.6 .277 -91.4 73.4 .033 .3 .368 -114.0 2.404 54.1 .031 -10.1 .469 -124.2 -176.5 1.817 38.7 .029 -14.0 .548 -131.8 .890 174.8 1.494 24.1 .029 -16.6 .601 -139.3 6000 .884 164.2 1.288 8.7 .029 -17.9 .640 -148.9 7000 .871 152.7 1.117 -7.3 .030 -22.5 .676 -160.1 8000 .851 143.1 .968 -21.1 .030 -15.8 .708 -168.9 9000 .841 135.2 .875 -32.8 .034 -12.8 .737 -175.2 10000 .831 126.5 .854 -44.2 .044 -10.3 .759 179.6 Download S-Parameters, click here 3 FLC107WG C-Band Power GaAs FET 2-Ø1.6±0.01 (0.063) 1.0 Min. (0.039) Case Style "WG" Metal-Ceramic Hermetic Package 2.8 (0.11) 0.1±0.05 (0.004) 2 2.5±0.15 (0.098) 1 3 0.03 8.5±0.2 (0.335) 0.6 0.8±0.1 (0.031) 1.0 Min. (0.039) 0.5 (0.020) 6.1±0.1 (0.240) 2.5 Max. (0.098) 1. 2. 3. 4. Gate Source Drain Source Unit: mm(inches) For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FUJITSU MICROELECTRONICS, LTD. Compound Semiconductor Division Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ Phone:+44 (0)1628 504800 FAX:+44 (0)1628 504888 CAUTION Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: • Do not put these products into the mouth. • Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. • Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. © 1998 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI0598M200 4