FLK107MH-14 X, Ku Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 30.0dBm(Typ.) High Gain: G1dB = 6.5dB(Typ.) High PAE: ηadd = 31%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLK102MH-14 is a power GaAs FET that is designed for general purpose applications in the Ku-Band frequency range as it provides superior power, gain, and efficiency. Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Item Condition Symbol Rating Unit Drain-Source Voltage VDS 15 V Gate-Source Voltage VGS -5 V 7.5 W Total Power Dissipation Tc = 25°C PT Storage Temperature Tstg -65 to +175 °C Channel Temperature Tch 175 °C Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDS) should not exceed 10 volts. 2. The forward and reverse gate currents should not exceed 8.8 and -0.5 mA respectively with gate resistance of 500Ω. 3. The operating channel temperature (Tch) should not exceed 145°C. ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C) Item Saturated Drain Current Symbol IDSS Test Conditions Min. Limit Typ. Max. Unit VDS = 5V, VGS = 0V - 400 600 mA Transconductance gm VDS = 5V, IDS = 250mA - 200 - mS Pinch-off Voltage Vp VDS = 5V, IDS = 20mA -1.0 -2.0 -3.5 V -5 - - V 29.0 30.0 - dBm 5.5 6.5 - dB - 31 - % - 15 20 °C/W Gate Source Breakdown Voltage VGSO Output Power at 1dB G.C.P. P1dB Power Gain at 1dB G.C.P. G1dB Power-added Efficiency ηadd Thermal Resistance Rth IGS = -20µA VDS = 10V, IDS = 0.6 IDSS (Typ.), f = 14.5 GHz Channel to Case CASE STYLE: MH Edition 1.1 August 1999 G.C.P.: Gain Compression Point 1 FLK107MH-14 X, Ku Band Power GaAs FET POWER DERATING CURVE DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE 500 VGS =0V 400 Drain Current (mA) 8 6 4 2 -0.5V 300 -1.0V 200 -1.5V 100 -2.0V 50 100 150 0 200 2 f = 14.5GHz IDS ≈ 0.6 IDSS VDS=10V VDS=8.5V P1dB (dBm) 31 40 24 ηadd 20 22 18 20 22 ηadd (%) 26 16 10 f = 14.5 GHz IDS ≈ 0.6 IDSS Pout 14 8 P1dB & ηadd vs. VDS OUTPUT POWER vs. INPUT POWER 28 6 Drain-Source Voltage (V) Case Temperature (°C) 30 4 30 P1dB 29 28 27 30 26 10 20 8 24 40 ηadd 9 10 Drain-Source Voltage (V) Input Power (dBm) 2 ηadd (%) 0 Output Power (dBm) Total Power Dissipation (W) 10 FLK107MH-14 X, Ku Band Power GaAs S11 S22 15 14 +j25 +j100 13 12 +j250 +j10 1.6 1.2 10GHz .08 11 12 13 14 11 16 SCALE FOR |S12| 10GHz 0 S21 S12 +90° SCALE FOR |S21| +j50 10 100 50Ω 16 15 14 250 10GHz 180° 0.2 0.1 .04 10GHz 12 14 0° 16 15 15 -j10 -j250 11 13 16 12 -j25 -j100 -j50 S11 -90° S-PARAMETERS VDS = 10V, IDS = 240mA S21 S12 MAG ANG MAG ANG FREQUENCY (MHZ) MAG ANG 500 .949 -99.8 8.893 131.6 .023 1000 .921 -137.6 5.628 114.8 10000 .783 -6.8 .924 10500 .769 -22.8 11000 .751 11500 S22 MAG ANG 47.7 .275 -58.0 .028 37.1 .297 -80.9 90.5 .039 71.6 .852 171.3 .932 85.8 .038 64.4 .857 166.9 -39.7 .959 79.8 .039 67.8 .843 161.7 .730 -57.4 .981 74.2 .043 63.7 .827 156.0 12000 .699 -76.9 1.032 71.9 .049 62.1 .825 149.9 12500 .659 -98.1 1.109 60.8 .044 63.5 .820 142.6 13000 .609 -119.9 1.151 53.5 .045 64.8 .824 134.6 13500 .544 -142.1 1.255 44.7 .045 51.5 .851 125.6 14000 .456 -162.6 1.402 30.5 .046 37.2 .890 113.9 14500 .331 179.3 1.521 19.7 .045 7.2 .913 102.8 15000 .170 -155.0 1.764 -4.8 .063 -39.7 .875 89.2 15500 .528 -132.8 1.697 -50.1 .108 -107.7 .654 69.0 16000 .878 -174.9 1.225 -99.6 .158 -171.2 .226 87.9 Download S-Parameters, click here 3 FLK107MH-14 X, Ku Band Power GaAs FET 1.0 Min. (0.039) Case Style "MH" Metal-Ceramic Hermetic Package 2-Ø1.8±0.15 (0.071) 0.1 (0.004) 3.5±0.15 (0.138) 1 3 2 0.5 (0.020) 1.0 Min. (0.039) 4 1.65±0.15 (0.065) 2.8 Max. (0.110) 3.5±0.3 (0.138) 1.0 (0.039) 1. 2. 3. 4. Gate Source (Flange) Drain Source (Flange) Unit: mm(inches) 6.7±0.2 (0.264) 10.0±0.3 (0.394) For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FUJITSU MICROELECTRONICS, LTD. Compound Semiconductor Division Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ Phone:+44 (0)1628 504800 FAX:+44 (0)1628 504888 CAUTION Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: • Do not put these products into the mouth. • Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. • Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. © 1998 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI0598M200 4