FLM7185-12F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 41.0dBm (Typ.) High Gain: G1dB = 8.0dB (Typ.) High PAE: ηadd = 30% (Typ.) Low IM3 = -45dBc@Po = 30.0dBm Broad Band: 7.1 ~ 7.9GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed Package DESCRIPTION The FLM7185-12F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system. Eudyna’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Item Condition Symbol Rating Unit Drain-Source Voltage VDS 15 V Gate-Source Voltage VGS -5 V 57.6 W Total Power Dissipation Tc = 25°C PT Storage Temperature Tstg -65 to +175 °C Channel Temperature Tch 175 °C Min. Limit Typ. Max. Unit VDS = 5V, VGS = 0V - 5000 7500 mA Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDS) should not exceed 10 volts. 2. The forward and reverse gate currents should not exceed 32.0 and -5.6 mA respectively with gate resistance of 50Ω. ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C) Item Saturated Drain Current Symbol IDSS Test Conditions Transconductance gm VDS = 5V, IDS = 3250mA - 5000 - mS Pinch-off Voltage Vp VDS = 5V, IDS = 250mA -0.5 -1.5 -3.0 V IGS = -250µA -5.0 - - V 40.0 41.0 - dBm 7.0 8.0 - dB Gate Source Breakdown Voltage VGSO Output Power at 1dB G.C.P. P1dB Power Gain at 1dB G.C.P. G1dB Drain Current Power-added Efficiency Idsr ηadd VDS = 10V, IDS = 0.65IDSS (Typ.), f = 7.1 ~ 8.5 GHz, ZS=ZL= 50 ohm - 3500 4500 mA - 30 - % - - ±0.6 dB -42 -45 - dBc Gain Flatness ∆G 3rd Order Intermodulation Distortion IM3 f = 8.5 GHz, ∆f = 10 MHz 2-Tone Test Pout = 30.0dBm S.C.L. Thermal Resistance Rth Channel to Case - 2.3 2.6 °C/W 10V x Idsr x Rth - - 80 °C Channel Temperature Rise ∆Tch CASE STYLE: IK Edition 1.2 August 2004 G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level 1 FLM7185-12F C-Band Internally Matched FET OUTPUT POWER & IM3 vs. INPUT POWER POWER DERATING CURVE 35 40 30 20 10 0 50 100 150 33 VDS=10V f1 = 8.5 GHz f2 = 8.51 GHz 2-tone test 31 Pout 29 -30 27 -35 -40 25 IM3 23 -45 21 -50 19 -55 200 Case Temperature (°C) 16 18 20 22 IM3 (dBc) 50 Output Power (S.C.L.) (dBm) Total Power Dissipation (W) 60 24 Input Power (S.C.L.) (dBm) S.C.L.: Single Carrier Level OUTPUT POWER vs. INPUT POWER OUTPUT POWER vs. FREQUENCY VDS=10V 43 P1dB 42 Pout Pin=34dBm 32dBm 40 30dBm 39 28dBm 38 37 26dBm 36 40 38 36 45 34 30 ηadd 15 32 35 24 7.1 7.3 7.5 7.7 7.9 8.1 8.3 26 28 30 32 8.5 Input Power (dBm) Frequency (GHz) 2 34 ηadd (%) 41 Output Power (dBm) Output Power (dBm) 42 VDS=10V f = 7.7 GHz FLM7185-12F C-Band Internally Matched FET S11 S22 +j50 +j100 +j25 7.3 7.0 GHz 9.0 8.9 7.0 GHz +j10 7.2 8.8 25 8.0 7.4 8.7 7.6 8.8 -j10 8.5 7.8 9.0 8.0 8.6 8.4 8.2 7.6 8.5 8.2 7.6 SCALE FOR |S12| 7.4 7.7 250 180° 0.2 7.5 8.4 7.2 8.6 1 8.8 7.3 -j250 2 9.0 7.2 3 7.1 7.0 GHz 4 -j100 0° 8.7 7.0 GHz 7.9 8.0 8.6 0.1 7.4 8.3 8.2 -j25 8.0 7.8 7.6 8.1 8.4 8.4 7.7 7.8 8.6 8.3 7.8 +j250 7.5 50Ω 8.1 8.2 7.9 7.4 SCALE FOR |S21| 7.2 7.1 0 S21 S12 +90° 8.8 8.9 9.0 -90° -j50 FREQUENCY (MHZ) MAG ANG S-PARAMETERS VDS = 10V, IDS = 3250mA S21 S12 MAG ANG MAG ANG 7000 .665 137.1 3.537 -107.2 .017 7100 .626 119.6 3.608 -120.7 .025 7200 .592 97.1 3.612 -138.2 .033 -178.1 .518 57.8 7300 .577 74.7 3.558 -155.3 .039 162.3 .514 41.1 7400 .575 53.6 3.435 -171.8 .046 145.3 .516 26.3 7500 .583 35.2 3.312 172.6 .051 131.0 .519 12.8 7600 .597 19.3 3.169 158.0 .054 115.4 .526 0.7 7700 .610 5.1 3.045 144.1 .059 102.4 .531 -10.2 7800 .616 -7.8 2.945 131.1 .062 90.8 .534 -20.5 7900 .613 -19.8 2.889 118.6 .065 77.0 .533 -30.2 8000 .599 -31.2 2.897 106.2 .069 66.0 .528 -39.1 8100 .581 -42.5 2.938 92.8 .075 54.3 .516 -47.8 8200 .556 -54.9 2.987 78.9 .080 41.0 .498 -56.6 8300 .524 -69.4 3.055 64.6 .087 27.8 .473 -65.7 8400 .476 -87.6 3.144 49.3 .091 13.4 .435 -74.8 8500 .424 -110.2 3.220 32.6 .097 -1.4 .380 -84.1 8600 .375 -139.2 3.264 15.1 .103 -19.0 .315 -91.5 8700 .351 -173.9 3.250 -3.3 .107 -36.8 .251 -94.1 8800 .370 150.2 3.168 -22.6 .107 -55.2 .204 -90.2 8900 .423 118.4 3.016 -41.9 .104 -74.0 .200 -83.9 9000 .491 92.3 2.818 -61.1 .098 -93.2 .236 -84.9 S11 3 S22 MAG ANG -134.4 .532 89.7 -157.6 .525 75.0 FLM7185-12F C-Band Internally Matched FET 2.0 Min. (0.079) Case Style "IK" Metal-Ceramic Hermetic Package 0.1 (0.004) 2 3 2.0 Min. (0.079) 4-R 1.3±0.15 (0.051) 17.4±0.3 (0.685) 8.0±0.2 (0.315) 1 0.6 (0.024) 1.4 (0.055) 14.9 (0.587) 20.4±0.3 (0.803) 2.4±0.15 (0.094) 5.5 Max. (0.217) 1. Gate 2. Source (Flange) 3. Drain Unit: mm(inches) 24±0.5 (0.945) For further information please contact: Eudyna Devices USA Inc. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. TEL: (408) 232-9500 FAX: (408) 428-9111 CAUTION Eudyna Devices Inc. products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: www.us.eudyna.com • Do not put this product into the mouth. Eudyna Devices Europe Ltd. • Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ United Kingdom TEL: +44 (0) 1628 504800 FAX: +44 (0) 1628 504888 Eudyna Devices Asia Pte Ltd. Hong Kong Branch Rm. 1101, Ocean Centre, 5 Canton Rd. Tsim Sha Tsui, Kowloon, Hong Kong TEL: +852-2377-0227 FAX: +852-2377-3921 • Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Eudyna Devices Inc. reserves the right to change products and specifications without notice. The information does not convey any license under rights of Eudyna Devices Inc. or others. © 2004 Eudyna Devices USA Inc. Printed in U.S.A. Eudyna Devices Inc. Sales Division 1, Kanai-cho, Sakae-ku Yokohama, 244-0845, Japan TEL: +81-45-853-8156 FAX: +81-45-853-8170 4