MITSUBISHI <MOSFET MODULE> FM200TU-3A HIGH POWER SWITCHING USE INSULATED PACKAGE FM200TU-3A ● ID(rms) .......................................................... 100A ● VDSS ............................................................. 150V ● Insulated Type ● 6-elements in a pack ● Thermistor inside ● UL Recognized Yellow Card No.E80276 File No.E80271 APPLICATION AC motor control of forklift (battery power source), UPS OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 110 97 ±0.25 70.9 32 6.5 16 16 36 36 10 35 ±1.0 10 30 6.5 V (SCREWING DEPTH) B 25 4 P U 90 14 20 32 CIRCUIT DIAGRAM (8)GVP (2)SVP 80 14 20 32 A (7)GUP (1)SUP 75 W 14 20 16.5 4 22.57 U 14 7-M6NUTS 3.96 9.2 5-6.5 38 6 (6) 12 3 (8.7) 67 ±0.25 9.1 13 1 14 4-φ6.5 MOUNTING HOLES 11.5 (6) P (15.8) 3 6.5 7 (14.5) (14.5) (6) 7 N (17.5) 7 22.75 26 ＋1.0 −0.5 30 L A B E L 15.2 16.5 Tc measured point Housing Type of A and B (Tyco Electronics P/N:) A: 917353-1 B: 179838-1 (9)GWP (3)SWP V W (10)GUN (11)GVN (12)GWN (4)SUN N (5)SVN (6)SWN (13) (14) (1)SUP (2)SVP (3)SWP (7)GUP (8)GVP (9)GWP (10)GUN (11)GVN (12)GWN (13)TH1 (14)TH2 (4)SUN (5)SVN (6)SWN A B May 2006 MITSUBISHI <MOSFET MODULE> FM200TU-3A HIGH POWER SWITCHING USE INSULATED PACKAGE ABSOLUTE MAXIMUM RATINGS (Tch = 25°C unless otherwise specified.) Symbol VDSS VGSS ID IDM IDA IS*1 ISM*1 PD*4 PD*4 Tch Tstg Viso Item Drain-source voltage Gate-source voltage Drain current Avalanche current Source current Maximum power dissipation Channel temperature Storage temperature Isolation voltage — Mounting torque — Weight Ratings 150 ±20 100 200 100 100 200 410 560 –40 ~ +150 –40 ~ +125 2500 3.5 ~ 4.5 3.5 ~ 4.5 600 Conditions G-S Short D-S Short TC’ = 122°C*3 Pulse*2 L = 10µH Pulse*2 Pulse*2 TC = 25°C TC’ = 25°C*3 Main terminal to base plate, AC 1 min. Main Terminal M6 Mounting M6 Typical value Unit V V A A A A A W W °C °C V N•m N•m g ELECTRICAL CHARACTERISTICS (Tch = 25°C unless otherwise specified.) Symbol Item IDSS VGS(th) IGSS rDS(ON) (chip) VDS(ON) (chip) Drain cutoff current Gate-source threshold voltage Gate leakage current Static drain-source On-state resistance Static drain-source On-state voltage R(lead) Lead resistance Ciss Coss Crss QG td(on) tr td(off) tf trr*1 Qrr*1 VSD*1 Rth(ch-c) Rth(ch-c’) Rth(c-f) Rth(c’-f’) Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Source-drain voltage Thermal resistance Contact thermal resistance Conditions VDS = VDSS, VGS = 0V ID = 10mA, VDS = 10V VGS = VGSS, VDS = 0V ID = 100A VGS = 15V ID = 100A VGS = 15V ID = 100A terminal-chip Tch = 25°C Tch = 125°C Tch = 25°C Tch = 125°C Tch = 25°C Tch = 125°C VDS = 10V VGS = 0V VDD = 80V, ID = 100A, VGS = 15V VDD = 80V, ID = 100A, VGS1 = VGS2 = 15V RG = 13Ω, Inductive load switching operation IS = 100A IS = 100A, VGS = 0V MOSFET part (1/6 module)*7 MOSFET part (1/6 module)*3 Case to fin, Thermal grease Applied*8 (1/6 module) Case to fin, Thermal grease Applied*3, *8 (1/6 module) Min. — 4.7 — — — — — — — — — — — — — — — — — — — — — — Limits Typ. — 6 — 4.8 9.1 0.48 0.91 1.2 1.68 — — — 820 — — — — — 6.5 — — — 0.1 0.09 Max. 1 7.3 1.5 6.6 — 0.66 — — — 50 7 4 — 400 250 450 200 200 — 1.3 0.30 0.22 — — Min. — — Limits Typ. 100 4000 Max. — — Unit mA V µA mΩ V mΩ nF nC ns ns µC V °C/W THERMISTOR PART Symbol RTH*6 B*6 Parameter Resistance B Constant Conditions 25°C*5 TTH = Resistance at TTH = 25°C, 50°C*5 Unit kΩ K *1: It is characteristics of the anti-parallel, source to drain free-wheel diode (FWDi). *2: Pulse width and repetition rate should be such that the device channel temperature (Tch) does not exceed Tch max rating. *3: TC’ measured point is just under the chips. If use this value, Rth(f-a) should be measured just under the chips. *4: Pulse width and repetition rate should be such as to cause negligible temperature rise. *5: TTH is thermistor temperature. *6: B = (InR1-InR2)/(1/T1-1/T2) R1: Resistance at T1(K), R2: Resistance at T2(K) *7: TC measured point is shown in page OUTLINE DRAWING. *8: Typical value is measured by using Shin-Etsu Chemical Co., Ltd “G-746”. May 2006 MITSUBISHI <MOSFET MODULE> FM200TU-3A HIGH POWER SWITCHING USE INSULATED PACKAGE PERFORMANCE CURVES TRANSFER CHARACTERISTICS (TYPICAL) Chip OUTPUT CHARACTERISTICS (TYPICAL) Chip VGS = 20V 15V 160 200 VDS = 10V 12V 10V 120 9V 80 40 DRAIN CURRENT ID (A) DRAIN CURRENT ID (A) 200 150 Tch = 25°C Tch = 125°C 100 50 Tch = 25°C 0 0 0.4 0.8 1.2 1.6 0 2.0 5 VGS = 12V 8 VGS = 15V 6 4 2 0 0 20 40 60 80 100 120 140 160 GATE THRESHOLD VOLTAGE VGS(th) (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS(ON) (mΩ) 10 6 5 3 2 1 0 0 20 40 60 80 100 120 140 160 CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 7 5 Tch = 25°C 2.5 2.0 1.5 ID = 200A 1.0 ID = 100A 0.5 CAPACITANCE (nF) DRAIN-SOURCE ON-STATE VOLTAGE VDS(ON) (V) VDS = 10V ID = 10mA 4 102 3.0 3 2 8 12 ID = 50A 16 20 GATE-SOURCE VOLTAGE VGS (V) Ciss 101 7 5 3 2 Coss 100 7 5 3 2 4 15 CHANNEL TEMPERATURE Tch (°C) DRAIN-SOURCE ON-STATE VOLTAGE VS. GATE BIAS (TYPICAL) Chip 0 13 7 CHANNEL TEMPERATURE Tch (°C) 0 11 GATE THRESHOLD VOLTAGE VS. TEMPERATURE (TYPICAL) DRAIN-SOURCE ON-STATE VOLTAGE VS. TEMPERATURE (TYPICAL) Chip ID = 100A 9 GATE-SOURCE VOLTAGE VGS (V) DRAIN-SOURCE VOLTAGE VDS (V) 12 7 Crss VGS = 0V 10–1 –1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 DRAIN-SOURCE VOLTAGE VDS (V) May 2006 MITSUBISHI <MOSFET MODULE> FM200TU-3A HIGH POWER SWITCHING USE INSULATED PACKAGE GATE CHARGE CHARACTERISTICS (TYPICAL) 16 VDD = 60V 12 VDD = 80V 8 4 0 103 ID = 100A 0 200 103 400 600 800 SOURCE CURRENT IS (A) GATE-SOURCE VOLTAGE VGS (V) 20 Tch = 25°C 102 7 5 3 2 0.6 0.7 0.8 0.9 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 104 7 5 td(on) 2 tr 102 7 5 tf 3 101 2 3 5 7 102 Conditions: VDD = 80V VGS = ±15V RG = 13Ω Tch = 125°C Inductive load 2 3 td(on) 103 tr 7 5 3 2 102 7 5 3 2 0 20 40 60 tf Conditions: VDD = 80V VGS = ±15V ID = 100A Tch = 125°C Inductive load 80 100 120 140 DRAIN CURRENT ID (A) GATE RESISTANCE RG (Ω) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 3 2 100 Esw(on) Err Conditions: VDD = 80V VGS = ±15V RG = 13Ω Tch = 125°C Inductive load 10–1 7 5 10–2 1 10 td(off) 3 2 101 5 7 103 7 5 3 2 SWITCHING TIME (ns) 3 101 1 10 1.0 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) Esw(off) 2 3 5 7 102 2 3 DRAIN CURRENT ID (A) 5 7 103 101 SWITCHING LOSS (mJ/pulse) SWITCHING TIME (ns) Tch = 125°C 2 SOURCE-DRAIN VOLTAGE VSD (V) 2 SWITCHING LOSS (mJ/pulse) 3 GATE CHARGE QG (nC) td(off) 3 2 VGS = 0V 7 5 101 0.5 1000 1200 7 5 7 5 FREE-WHEEL DIODE FORWARD CHARACTERISTICS Chip (TYPICAL) Esw(on) 7 5 3 2 Esw(off) 100 Conditions: VDD = 80V VGS = ±15V ID = 100A Tch = 125°C Inductive load 7 5 Err 3 2 10–1 7 5 3 2 10–2 0 20 40 60 80 100 120 140 GATE RESISTANCE RG (Ω) May 2006 MITSUBISHI <MOSFET MODULE> FM200TU-3A HIGH POWER SWITCHING USE INSULATED PACKAGE TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 103 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 100 Irr (A), trr (ns) 3 2 trr 102 7 5 Irr 3 2 Conditions: VDD = 80V VGS = ±15V RG = 13Ω Tch = 25°C Inductive load 101 7 5 3 2 100 1 10 2 5 7 102 3 2 3 7 5 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(ch-c) 7 5 3 2 10–1 10–1 7 5 7 5 3 2 3 2 10–2 10–2 7 5 3 2 7 5 3 Single pulse 2 Tch = 25°C Per unit base = Rth(ch-c) = 0.30°C/W 10–3 10–5 2 3 5 710–4 2 3 5 7 10–3 10–3 5 7 103 TIME (s) SOURCE CURRENT IS (A) CHIP LAYOUT (110) (97) 90.6 57.6 24.6 P 48.4 29.6 N 7 1 TrUP 13 TrVP TrWP TrVN TrUN 12 (90) (80) (67) 14 TrWN LABEL SIDE 6 U V W 25.6 58.6 91.6 May 2006