FM2G150US60 Molding Type Module General Description Fairchild’s Insulated Gate Bipolar Transistor (IGBT) power modules provide low conduction and switching losses as well as short circuit ruggedness. They are designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters where short circuit ruggedness is a required feature. Features • • • • • • UL Certified No. E209204 Short circuit rated 10us @ TC = 100°C, VGE = 15V High speed switching Low saturation voltage : VCE(sat) = 2.2 V @ IC = 150A High input impedance Fast and soft anti-parallel FWD Package Code : 7PM-BB E1/C2 Application • • • • • C1 AC & DC motor controls General purpose inverters Robotics Servo controls UPS E2 G1 E1 G2 E2 Internal Circuit Diagram Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) IF IFM TSC PD TJ Tstg Viso Mounting Torque TC = 25°C unless otherwise noted Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Pulsed Collector Current Diode Continuous Forward Current Diode Maximum Forward Current Short Circuit Withstand Time Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Isolation Voltage Power Terminals Screw: M5 Mounting Screw: M6 @ TC = 25°C @ TC = 100°C @ TC = 100°C @ TC = 25°C @ AC 1minute FM2G150US60 600 ± 20 150 300 150 300 10 625 -40 to +150 -40 to +125 2500 2.0 2.5 Units V V A A A A us W °C °C V N.m N.m Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature ©2002 Fairchild Semiconductor Corporation FM2G150US60 Rev. A1 FM2G150US60 IGBT C Symbol Parameter = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Units 600 -- -- V VGE = 0V, IC = 1mA -- 0.6 -- V/°C VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V --- --- 250 ± 100 uA nA 5.0 -- 8.5 V IC = 150A, VGE = 15V -- 2.2 2.8 V VCE = 30V, VGE = 0V, f = 1MHz ---- 12840 1400 354 ---- pF pF pF --------------- 90 50 160 85 1.6 4.3 5.9 160 64 240 210 2.7 7.1 9.8 --200 200 ----------- ns ns ns ns mJ mJ mJ ns ns ns ns mJ mJ mJ VCC = 300 V, VGE = 15V 100°C 10 -- -- us VCE = 300 V, IC = 150A, VGE = 15V ---- 620 120 270 700 --- nC nC nC Off Characteristics BVCES ∆BVCES/ ∆TJ ICES IGES Collector-Emitter Breakdown Voltage Temperature Coefficient of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current VGE = 0V, IC = 250uA On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage IC = 0V, IC = 200mA Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Tsc Short Circuit Withstand Time Qg Qge Qgc Total Gate Charge Gate-Emitter Charge Gate-Collector Charge ©2002 Fairchild Semiconductor Corporation VCC = 300 V, IC = 150A, RG = 2.0Ω, VGE = 15V Inductive Load, TC = 25°C VCC = 300 V, IC = 150A, RG = 2.0Ω, VGE = 15V Inductive Load, TC = 125°C @ TC = FM2G150US60 Rev. A1 FM2G150US60 Electrical Characteristics of the IGBT T C Symbol Parameter VFM Diode Forward Voltage trr Diode Reverse Recovery Time Irr Diode Peak Reverse Recovery Current Qrr Diode Reverse Recovery Charge = 25°C unless otherwise noted Test Conditions TC = 25°C IF = 150A TC = 100°C IF = 150A di / dt = 300 A/us Min. -- Typ. 1.9 Max. 2.8 -- 1.8 -- TC = 25°C -- 90 130 TC = 100°C -- 130 -- TC = 25°C -- 15 20 TC = 100°C -- 22 -- TC = 25°C -- 675 1270 TC = 100°C -- 1430 -- Units V ns A nC Thermal Characteristics Symbol RθJC RθJC RθCS Weight Parameter Junction-to-Case (IGBT Part, per 1/2 Module) Junction-to-Case (DIODE Part, per 1/2 Module) Case-to-Sink (Conductive grease applied) Weight of Module ©2002 Fairchild Semiconductor Corporation Typ. --0.03 -- Max. 0.20 0.47 -270 Units °C/W °C/W °C/W g FM2G150US60 Rev. A1 FM2G150US60 Electrical Characteristics of DIODE T Common Emitter T C = 25℃ 280 20V 15V Common Emitter VGE = 15V TC = 25℃ TC = 125℃ 12V 250 Collector Current, I C [A] Collector Current, IC [A] FM2G150US60 300 320 VGE = 10V 240 200 160 120 200 150 100 80 50 40 0 0 0 2 4 6 0.3 8 Fig 1. Typical Output Characteristics 180 Common Emitter V GE = 15V 20 V CC = 300V Load Current : peak of square wave 160 300A 4 Load Current [A] 140 3 150A 2 IC = 80A 120 100 80 60 40 1 Duty cycle : 50% T C = 100℃ Power Dissipation = 200W 20 0 0 0 30 60 90 120 150 0.1 1 10 100 1000 Frequency [Khz] Case Temperature, TC [℃] Fig 3. Saturation Voltage vs. Case Temperature at Variant Current Level Fig 4. Load Current vs. Frequency 20 20 Common Emitter TC = 25℃ Common Emitter TC = 125℃ Collector - Emitter Voltage, VCE [V] Collector - Emitter Voltage, VCE [V] 10 Fig 2. Typical Saturation Voltage Characteristics 5 Collector - Emitter Voltage, VCE [V] 1 Collector - Emitter Voltage, V CE [V] Collector - Emitter Voltage, VCE [V] 16 12 8 300A 4 150A IC = 80A 0 16 12 8 300A 150A 4 IC = 80A 0 0 4 8 12 16 Gate - Emitter Voltage, VGE [V] Fig 5. Saturation Voltage vs. VGE ©2002 Fairchild Semiconductor Corporation 20 0 4 8 12 16 20 Gate - Emitter Voltage, VGE [V] Fig 6. Saturation Voltage vs. VGE FM2G150US60 Rev. A1 25000 Cies 20000 15000 10000 Ton Switching Time [ns] Capacitance [pF] 1000 Common Emitter V GE = 0V, f = 1MHz T C = 25℃ 30000 Coes Tr 100 Common Emitter V CC = 300V, V GE = ± 15V IC = 150A T C = 25℃ T C = 125℃ 5000 Cres 0 0.5 10 1 10 30 1 10 Fig 7. Capacitance Characteristics Common Emitter VCC = 300V, VGE = ± 15V IC = 150A TC = 25℃ TC = 125℃ 10000 Toff Switching Loss [uJ] Switching Time [ns] Fig 8. Turn-On Characteristics vs. Gate Resistance 20000 Common Emitter V CC = 300V, VGE = ± 15V IC = 150A T C = 25℃ T C = 125℃ 1000 50 Gate Resistance, R G [Ω ] Collector - Emitter Voltage, VCE [V] 3000 FM2G150US60 35000 Tf Eoff Eon Tf 100 1000 1 10 1 50 10 Gate Resistance, R G [Ω ] 50 Gate Resistance, R G [Ω ] Fig 9. Turn-Off Characteristics vs. Gate Resistance Fig 10. Switching Loss vs. Gate Resistance Common Emitter V CC = 300V, V GE = ± 15V RG = 2.0Ω T C = 25℃ T C = 125℃ Common Emitter VCC = 300V, VGE = ± 15V RG = 2.0Ω T C = 25℃ T C = 125℃ 1000 Switching Time [ns] Switching Time [ns] 1000 Ton 100 Tr Toff Tf 100 10 20 40 60 80 100 120 Collector Current, IC [A] Fig 11. Turn-On Characteristics vs. Collector Current ©2002 Fairchild Semiconductor Corporation 140 150 20 40 60 80 100 120 140 150 Collector Current, IC [A] Fig 12. Turn-Off Characteristics vs. Collector Current FM2G150US60 Rev. A1 FM2G150US60 Eoff Eoff Eon Eon 1000 100 20 Gate - Emitter Voltage, VGE [ V ] Switching Loss [uJ] 15 Common Emitter V = 300V, V GE = ± 15V 10000 CC RG = 2.0Ω T C = 25℃ T C = 125℃ Common Emitter RL = 2 Ω T C = 25℃ 12 300 V 9 200 V 6 V CC = 100 V 3 0 40 60 80 100 120 140 150 0 100 200 Collector Current, IC [A] 300 400 500 600 700 Gate Charge, Qg [ nC ] Fig 13. Switching Loss vs. Collector Current Fig 14. Gate Charge Characteristics 1000 500 IC MAX. (Pulsed) 50us 100us Collector Current, IC [A] Collector Current, IC [A] IC MAX. (Continuous) 100 1㎳ DC Operation 10 Single Nonrepetitive Pulse T C = 25℃ Curves must be derated linerarly with increase in temperature 1 0.1 0.3 1 100 10 Safe Operating Area o VGE = 20V, T C = 100 C 10 100 1 1000 1 10 Collector-Emitter Voltage, V CE [V] Fig 15. SOA Characteristics 1 Thermal Response, Zthjc [℃/W] Collector Current, I C [A] 1000 Fig 16. Turn-Off SOA Characteristics 1000 100 10 1 100 Collector-Emitter Voltage, V CE [V] Single Nonrepetitive Pulse T J ≤ 125℃ V GE = 15V RG = 2.0 Ω 0 100 200 0.01 T C = 25℃ IGBT : DIODE : 1E-3 300 400 500 Collector-Emitter Voltage, V CE [V] Fig 17. RBSOA Characteristics ©2002 Fairchild Semiconductor Corporation 0.1 600 700 -5 10 -4 10 -3 10 -2 10 -1 10 0 1 10 10 Rectangular Pulse Duration [sec] Fig 18. Transient Thermal Impedance FM2G150US60 Rev. A1 300 Peak Reverse Recovery Current, Irr [A] Reverse Recovery Time, Trr [x10ns] Common Cathode VGE = 0V TC = 25℃ TC = 125℃ 350 Forward Current, I F [A] FM2G150US60 30 400 250 200 150 100 50 0 0 1 2 Forward Voltage, V F [V] Fig 19. Forward Characteristics ©2002 Fairchild Semiconductor Corporation 3 4 Common Cathode di/dt = 300A/㎲ TC = 25℃ TC = 100℃ Irr Irr Trr 10 Trr 5 0 20 40 60 80 100 120 140 160 Forward Current, IF [A] Fig 20. Reverse Recovery Characteristics FM2G150US60 Rev. A1 FM2G150US60 Package Dimension 7PM-BB (FS PKG CODE BE) Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation FM2G150US60 Rev. A1 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FAST® FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ SLIENT SWITCHER® SMART START™ SPM™ STAR*POWER™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET® VCX™ STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness. provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2002 Fairchild Semiconductor Corporation Rev. H5