Formosa MS Chip Schottky Barrier Diodes FM320-AN THRU FM3100-AN Silicon epitaxial planer type SMA-N Features 0.185(4.8) 0.173(4.4) 0.012(0.3) Typ. Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy Molding Compound. 0.110(2.8) 0.094(2.4) For surface mounted applications. 0.165(4.2) 0.150(3.8) Exceeds environmental standards of MIL-S-19500 / 228 0.067(1.7) 0.060(1.5) Low leakage current. 0.040(1.0) Typ. 0.040 (1.0) Typ. 0.067(1.7) 0.053(1.3) Mechanical data Dimensions in inches and (millimeters) Case : Molded plastic, JEDEC DO-214AC Terminals : Solder plated, solderable per MIL-STD-750, Method 2026 Polarity : Indicated by c athode band Mounting Position : Any Weight : 0.0015 ounce, 0.05 gram MAXIMUM RATINGS (AT TA=25oC unless otherwise noted) PARAMETER CONDITIONS Symbol Forward rectified current See Fig.1 Forward surge current 8.3ms single half sine-wave superimposed on rate load (JEDEC methode) 25o C VR = VRRM TA = Reverse current MAX. UNIT IO 3.0 A IFSM 80 A 0.5 mA 20 Junction to ambient Diode junction capacitance Rq JA f=1MHz and applied 4vDC reverse voltage Storage temperature MARKING CODE *1 V RMS *2 VR *3 (V) (V) (V) FM320-AN SS32 20 14 20 FM330-AN SS33 30 21 30 FM340-AN SS34 40 28 40 FM350-AN SS35 50 35 50 FM360-AN SS36 60 42 60 FM380-AN SS38 80 56 80 FM3100-AN S310 100 70 100 VF *4 250 -55 C / w pF +150 o C Operating temperature (V) (o C) 0.50 -55 to +125 *1 Repetitive peak reverse voltage *2 RMS voltage *3 Continuous reverse voltage 0.75 -55 to +150 0.85 mA o 80 CJ TSTG V RRM TYP. IR VR = VRRM TA = 125o C Thermal resistance SYMBOLS MIN. *4 Maximum forward voltage RATING AND CHARACTERISTIC CURVES (FM320-AN THRU FM3100-AN) FIG.1-TYPICAL FORWARD CURRENT DERATING CURVE FIG.2-TYPICAL FORWARD -AN N 0-A 0.5 0 0 20 40 60 80 100 120 140 160 180 200 AMBIENT TEMPERATURE,( C) PEAK FORWAARD SURGE CURRENT,(A) FIG.3-MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 10 3.0 1.0 FM 38 0A 00 1.0 31 FM N~ 0-A 34 FM N~ 0-A 1.5 INSTANTANEOUS FORWARD CURRENT,(A) 35 FM 2.0 FM FM 32 35 00AN AN ~F ~F N~ M M FM 36 34 0 031 -A AN 00 N -A N 50 2.5 32 FM AVERAGE FORWARD CURRENT,(A) CHARACTERISTICS 3.0 Tj=25 C Pulse Width 300us 1% Duty Cycle 0.1 100 .01 80 .1 .3 .5 .7 .9 1.1 1.3 1.5 FORWARD VOLTAGE,(V) 60 8.3ms Single Half Tj=25 C Sine Wave 40 JEDEC method 20 FIG.5 - TYPICAL REVERSE CHARACTERISTICS 0 1 5 50 10 100 100 NUMBER OF CYCLES AT 60Hz REVERSE LEAKAGE CURRENT, (mA) FIG.4-TYPICAL JUNCTION CAPACITANCE JUNCTION CAPACITANCE,(pF) 700 600 500 400 300 200 10 1.0 Tj=75 C Tj=25 C .1 100 0 .01 .05 .1 .5 1 REVERSE VOLTAGE,(V) 5 10 50 100 .01 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE,(%)