Formosa FM840 Chip schottky barrier diodes - silicon epitaxial planer type Datasheet

Formosa MS
Chip Schottky Barrier Diodes
FM820 THRU FM860
Silicon epitaxial planer type
Features
SMC
Plastic package has Underwriters Laboratory
Flammability Classification 94V-O Utilizing Flame
Retardant Epoxy Molding Compound.
0.276(7.0)
0.260(6.6)
For surface mounted applications.
0.012(0.3) Typ.
0.152(3.8)
0.144(3.6)
0.189(4.8)
0.173(4.4)
Exceeds environmental standards of MIL-S-19500 /
228
0.244(6.2)
0.228(5.8)
Low leakage current.
0.087(2.2)
0.071(1.8)
0.032(0.8) Typ.
0.040(1.0) Typ.
Mechanical data
0.040 (1.0) Typ.
Dimensions in inches and (millimeters)
Case : Molded plastic, JEDEC DO-214AB
Terminals : Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity : Indicated by c athode band
Mounting Position : Any
Weight : 0.00585 ounce, 0.195 gram
o
MAXIMUM RATINGS (AT TA=25 C unless otherwise noted)
PARAMETER
CONDITIONS
Symbol
Forward rectified current
See Fig.1
Forward surge current
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
Junction to ambient
Diode junction capacitance
UNIT
IO
8.0
A
IFSM
150
A
5.0
mA
f=1MHz and applied 4vDC reverse voltage
*1
VRMS
*2
VR
*3
(V)
(V)
(V)
FM820
SK82
20
14
20
FM830
SK83
30
21
30
FM840
SK84
40
28
40
FM850
SK85
50
35
50
FM860
SK86
60
42
60
VF
*4
(V)
700
-55
C / w
pF
+150
o
C
Operating
temperature
(o C)
*1 Repetitive peak reverse voltage
*2 RMS voltage
0.65
*3 Continuous reverse voltage
-55 to +125
0.70
mA
o
55
CJ
TSTG
VRRM
50
Rq JA
Storage temperature
MARKING
CODE
MAX.
IR
VR = VRRM TA = 100o C
Thermal resistance
SYMBOLS
TYP.
25o C
VR = VRRM TA =
Reverse current
MIN.
*4 Maximum forward voltage
RATING AND CHARACTERISTIC CURVES (FM820 THRU FM860)
FIG.1-TYPICAL FORWARD CURRENT DERATING CURVE
FIG.2-TYPICAL FORWARD
50
10
8
6
4
2
0
0
20
40
60
80
100
120
140
160
180
200
CASE TEMPERATURE,( C)
FIG.3-MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
INSTANTANEOUS FORWARD CURRENT,(A)
AVERAGE FORWARD CURRENT,(A)
CHARACTERISTICS
12
10
1.0
Tj=25 C
Pulse Width 300us
1% Duty Cycle
0.1
PEAK FORWARD SURGE CURRENT,(A)
250
.01
200
.1
.3
.5
.7
.9
1.1
1.3
1.5
FORWARD VOLTAGE,(V)
150
8.3ms Single Half
Tj=25 C
Sine Wave
100
JEDEC method
50
FIG.5 - TYPICAL REVERSE
CHARACTERISTICS
0
1
5
50
10
100
100
NUMBER OF CYCLES AT 60Hz
REVERSE LEAKAGE CURRENT, (mA)
FIG.4-TYPICAL JUNCTION CAPACITANCE
JUNCTION CAPACITANCE,(pF)
2800
2400
2000
1600
1200
800
10
Tj=75 C
1.0
Tj=25 C
.1
400
0
.01
.05
.1
.5
1
REVERSE VOLTAGE,(V)
5
10
50
100
.01
0
20
40
60
80
100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE,(%)
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