FMBA14 C2 E1 C1 B2 E2 pin #1 B1 SuperSOT-6 Mark: .1N NPN Multi-Chip Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units VCES Collector-Emitter Voltage 30 V VCBO Collector-Base Voltage 30 V VEBO Emitter-Base Voltage 10 V IC Collector Current - Continuous TJ, Tstg Operating and Storage Junction Temperature Range 1.2 A -55 to +150 °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RθJA TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient 1998 Fairchild Semiconductor Corporation Max Units FMBA14 700 5.6 180 mW mW/°C °C/W FMBA14 Discrete POWER & Signal Technologies (continued) Electrical Characteristics Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units OFF CHARACTERISTICS V(BR)CES Collector-Emitter Breakdown Voltage IC = 100 µA, IB = 0 ICBO Collector-Cutoff Current VCB = 30 V, IE = 0 100 nA IEBO Emitter-Cutoff Current VEB = 10 V, IC = 0 100 nA 1.5 V 2.0 V 30 V ON CHARACTERISTICS* hFE DC Current Gain VCE(sat) Collector-Emitter Saturation Voltage IC = 10 mA, VCE = 5.0 V IC = 100 mA, VCE = 5.0 V IC = 100 mA, IB = 0.1 mA VBE(on) Base-Emitter On Voltage IC = 100 mA, VCE = 5.0 V 10K 20K SMALL SIGNAL CHARACTERISTICS fT Current Gain - Bandwidth Product IC = 10 mA, VCE = 10 V, f = 100 MHz 200 MHz *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% 250 200 VCE = 5V 125 °C 150 25 °C 100 - 40 °C 50 0 0.001 0.01 0.1 I C - COLLECTOR CURRENT (A) 1 Base-Emitter Saturation Voltage vs Collector Current 2 β = 1000 1.6 - 40 ºC 25 °C 1.2 125 ºC 0.8 0.4 0 1 10 100 I C - COLLECTOR CURRENT (mA) 1000 VCESAT- COLLECTOR EMITTER VOLTAGE (V) Typical Pulsed Current Gain vs Collector Current Collector-Emitter Saturation Voltage vs Collector Current 1.6 β = 1000 1.2 - 40 ºC 0.8 25°C 125 ºC 0.4 VBEON - BASE EMITTER ON VOLTAGE (V) VBESAT- BASE EMITTER VOLTAGE (V) hFE - TYPICAL PULSED CURRENT GAIN (K) Typical Characteristics 0 1 10 100 I C - COLLECTOR CURRENT (mA) 1000 Base Emitter ON Voltage vs Collector Current 2 1.6 - 40 ºC 25 °C 1.2 125 ºC 0.8 VCE = 5V 0.4 0 1 10 100 I C - COLLECTOR CURRENT (mA) 1000 FMBA14 NPN Multi-Chip Darlington Transistor (continued) (continued) ICBO- COLLECTOR CURRENT (nA) Collector-Cutoff Current vs Ambient Temperature 100 VCB = 30V 10 1 0.1 0.01 25 50 75 100 T A- AMBIENT TEMPERATURE ( º C) 125 BVCER - BREAKDOWN VOLTAGE (V) Typical Characteristics Collector-Emitter Breakdown Voltage with Resistance Between Emitter-Base 62.5 62 61.5 61 60.5 60 59.5 0.1 10 Cib 5 Cob 2 0.1 1 10 100 Vce - COLLECTOR VOLTAGE(V) Vce = 5V 40 30 20 10 0 1 10 SOT-6 0.25 0 25 50 75 100 o TEMPERATURE ( C) 20 50 IC - COLLECTOR CURRENT (mA) 0.5 0 1000 50 1 0.75 100 Gain Bandwidth Product vs Collector Current Power Dissipation vs Ambient Temperature PD - POWER DISSIPATION (W) CAPACITANCE (pF) 20 f T - GAIN BANDWIDTH PRODUCT (MHz) f = 1.0 MHz 10 RESISTANCE (k Ω) Input and Output Capacitance vs Reverse Voltage 1 125 150 100 150 FMBA14 NPN Multi-Chip Darlington Transistor