FMBM5551 NPN General Purpose Amplifier • This device has matched dies • Sourced from process 16. • See MMBT5551 for characteristics C2 E1 C1 B2 E2 pin #1 B1 SuperSOTTM-6 Mark: .3S2 Dot denotes pin #1 Absolute Maximum Ratings * Value Units VCEO Symbol Collector-Emitter Voltage Parameter 160 V VCBO Collector-Base Voltage 180 V VEBO Emitter-Base Voltage 6 V IC Collector Current (DC) 600 mA PC Collector Dissipation (TC = 25°C) 0.7 W TJ Junction Temperature TSTG Storage Temperature Range TθJA Thermal Resistance, Junction to Ambient 150 °C -55 ~ 150 °C 180 °C/W * Pd total, for both transistors. For each transistor, Pd = 350mW Electrical Characteristics Symbol TC = 25°C unless otherwise noted Parameter Conditions Min. Max Units Off Characteristics BVCEO Collector-Emitter Voltage IC = 1mA, IB = 0 160 BVCBO Collector-Base Voltage IC = 100µA, IE = 0 180 V BVEBO Emitter-Base Voltage IC = 10µA, IC = 0 6 V ICBO Collector Cut-off Current VCB = 120V VCB = 120V, Ta = 100°C 50 50 nA µA IEBO Emitter Cut-off Current VEB = 4V 50 nA V On Characteristics hFE1 DC Current Gain VCE = 5V, IC = 1mA 80 DIVID1 Variation Ratio of hFE1 Between Die 1 and Die 2 hFE1(Die1)/hFE1(Die2) 0.9 1.1 hFE2 DC Current Gain VCE = 5V, IC = 10mA 80 250 DIVID2 Variation Ratio of hFE2 Between Die 1 and Die 2 hFE2(Die1)/hFE2(Die2) 0.95 1.05 ©2005 Fairchild Semiconductor Corporation FMBM5551 Rev. D 1 www.fairchildsemi.com FMBM5551 NPN General Purpose Amplifier April 2005 Symbol TC = 25°C unless otherwise noted Parameter Conditions Min. Max Units hFE3 DC Current Gain VCE = 5V, IC = 50mA 30 DIVID3 Variation Ratio of hFE3 Between Die 1 and Die 2 hFE3(Die1)/hFE3(Die2) 0.9 VCE(sat) Collector-Emitter Saturation Voltage IC = 10mA, IB = 1mA IC = 50mA, IB = 5mA 0.15 0.2 V V VBE(sat) Base-Emitter Saturation Voltage IC = 10mA, IB = 1mA IC = 50mA, IB = 5mA 1 1 V V VBE(on) Base-Emitter On Voltage VCE = 5V, IC = 10mA DEL Difference of VBE(on) Between Die1 and Die 2 VBE(on)(Die1)-VBE(on)(Die2) -8 1.1 1 V 8 mV 6 pF Small Signal Characteristics Cob Output Capacitance VCB = 10V, f = 1MHz Cib Input Capacitance VCB = 0.5V, f = 1MHz fT Current Gain Bandwidth Product VCE = 10V, IC = 10mA, f = 100MHz NF Noise Figure VCE = 5V, IC = 200µA, f = 1MHz, RS = 20KΩ, B = 200Hz hfe Small Signal Current Gain VCE = 10V, IC = 1.0mA, f = 1.0KHz FMBM5551 Rev. D 2 100 50 20 pF 300 MHz 8 dB 250 www.fairchildsemi.com FMBM5551 NPN General Purpose Amplifier Electrical Characteristics (Continued) FMBM5551 NPN General Purpose Amplifier Mechanical Dimensions SuperSOTTM-6 Dimensions in Millimeters FMBM5551 Rev. D 3 www.fairchildsemi.com The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ ActiveArray™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FAST® FASTr™ FPS™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I15 4 FMBM5551 Rev. D www.fairchildsemi.com FMBM5551 NPN General Purpose Amplifier TRADEMARKS