Fairchild FMC7G30US60 Compact & complex module Datasheet

IGBT
FMC7G30US60
Compact & Complex Module
General Description
Fairchild’s Insulated Gate Bipolar Transistor (IGBT) power
modules provide low conduction and switching losses as
well as short circuit ruggedness. They are designed for
applications such as motor control, uninterrupted power
supplies (UPS) and general inverters where short circuit
ruggedness is a required feature.
Features
•
•
•
•
•
•
•
UL Certified No. E209204
Short circuit rated 10us @ TC = 100°C, VGE = 15V
High speed switching
Low saturation voltage : VCE(sat) = 2.2 V @ IC = 30A
High input impedance
Built in brake and 3 phase rectifier circuit
Fast & soft anti-parallel FWD
Package Code : 21PM-BA
P
P1
GU
GV
GW
R
Applications
B
EU
EV
EW
S
U
V
W
-GV
-GW
T
•
•
•
•
AC & DC motor controls
General purpose inverters
Robotics
Servo controls
GB
N
-GU
E
Internal Circuit Diagram
Absolute Maximum Ratings
Inverter
&
Brake
Converter
Common
Symbol
VCES
VGES
IC
ICM (1)
IF
IFM
PD
TSC
VRRM
IO
IFSM
TC = 25°C unless otherwise noted
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
@ TC = 25°C
Pulsed Collector Current
Diode Continuous Forward Current
@ TC = 100°C
Diode Maximum Forward Current
Maximum Power Dissipation
@ TC = 25°C
Short Circuit Withstand Time
@ TC = 100°C
Repetitive Peak Reverse Voltage
Average Output Rectified Current
Surge Forward Current
@ 1Cycle at 60Hz, Peak value Non-Repetitive
FMC7G30US60
600
± 20
30
60
30
60
125
10
1200
30
Units
V
V
A
A
A
A
W
us
V
A
300
A
369
A2s
I2t
TJ
Operating Junction Temperature
-40 to +150
°C
TSTG
Storage Temperature Range
-40 to +125
°C
VISO
Isolation Voltage
Mounting part Screw
2500
1.25
V
N.m
Mounting Torque
1 Cycle Surge Current
@ AC 1minute
@ M4
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
©2001 Fairchild Semiconductor Corporation
FMC7G30US60 Rev. A3
FMC7G30US60
October 2001
Symbol
Parameter
Test Conditions
C
= 25°C unless otherwise noted
Min.
Typ.
Max.
Units
600
--
--
V
VGE = 0V, IC = 1mA
--
0.6
--
V/°C
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
---
---
250
± 100
uA
nA
IC = 30mA, VCE = VGE
IC = 30A, VGE = 15V
5.0
--
6.0
2.2
8.5
2.8
V
V
----
1970
310
74
----
pF
pF
pF
---------------
30
65
54
138
0.92
0.82
1.74
34
67
60
281
0.93
1.56
2.49
--80
200
--2.4
--90
400
--3.4
ns
ns
ns
ns
mJ
mJ
mJ
ns
ns
ns
ns
mJ
mJ
mJ
VCC = 300 V, VGE = 15V
100°C
10
--
--
us
VCE = 300 V, IC = 30A,
VGE = 15V
----
85
17
39
120
25
55
nC
nC
nC
Off Characteristics
BVCES
∆BVCES/
∆TJ
ICES
IGES
Collector-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown
Voltage
Collector Cut-Off Current
G-E Leakage Current
VGE = 0V, IC = 250uA
On Characteristics
VGE(th)
VCE(sat)
G-E Threshold Voltage
Collector to Emitter Saturation Voltage
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VCE = 30V, VGE = 0V,
f = 1MHz
Switching Characteristics
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Tsc
Short Circuit Withstand Time
Qg
Qge
Qgc
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
©2001 Fairchild Semiconductor Corporation
VCC = 300 V, IC = 30A,
RG = 7Ω, VGE = 15V,
Inductive Load, TC = 25°C
VCC = 300 V, IC = 30A,
RG = 7Ω, VGE = 15V,
Inductive Load, TC = 125°C
@ TC =
FMC7G30US60 Rev. A3
FMC7G30US60
Electrical Characteristics of the IGBT @ Inverter & Brake T
Symbol
Parameter
VFM
Diode Forward Voltage
trr
Diode Reverse Recovery Time
Irr
Diode Peak Reverse Recovery
Current
Qrr
Diode Reverse Recovery Charge
Test Conditions
TC = 25°C
IF = 30A
TC = 100°C
IF = 30A
di / dt = 60 A/us
Parameter
VFM
Diode Forward Voltage
IRRM
Repetitive Reverse Current
Typ.
2.0
Max.
2.8
--
2.0
--
--
90
180
TC = 100°C
--
130
--
TC = 25°C
--
2.2
3.4
TC = 100°C
--
3.4
--
TC = 25°C
--
400
600
TC = 100°C
--
880
--
C
Units
V
ns
A
nC
= 25°C unless otherwise noted
Test Conditions
TC = 25°C
IF = 30A
TC = 100°C
VR = VRRM
= 25°C unless otherwise noted
TC = 25°C
Electrical Characteristics of the DIODE @ Converter T
Symbol
C
Min.
--
Min.
--
Typ.
1.1
Max.
1.5
--
1.0
--
TC = 25°C
--
--
8
TC = 100°C
--
5
--
Units
V
mA
Thermal Characteristics
Inverter
Brake
Converter
Weight
Symbol
RθJC
RθJC
RθJC
RθJC
RθJC
©2001 Fairchild Semiconductor Corporation
Parameter
Junction-to-Case (IGBT Part, per 1/6 Module)
Junction-to-Case (DIODE Part, per 1/6 Module)
Junction-to-Case (IGBT Part)
Junction-to-Case (DIODE Part)
Junction-to-Case (DIODE Part, per 1/6 Module)
Weight of Module
Typ.
-----270
Max.
1.0
2.2
1.0
2.2
2.0
--
Units
°C/W
°C/W
°C/W
°C/W
°C/W
g
FMC7G30US60 Rev. A3
FMC7G30US60
Electrical Characteristics of the DIODE @ Inverter & Brake T
20V
15V
70
Collector Current, IC [A]
Common Emitter
VGE = 15V
T C = 25℃ ━━
T C = 125℃ ------
80
Collector Current, IC [A]
Common Emitter
TC = 25℃
80
60
12V
50
40
30
VGE = 10V
70
60
50
40
30
20
20
10
10
0
0
0
2
4
6
1
8
Collector - Emitter Voltage, VCE [V]
10
Collector - Emitter Voltage, VCE [V]
Fig 1. Typical Output Characteristics
Fig 2. Typical Saturation Voltage
Characteristics
5
40
Common Emitter
V GE = 15V
VCC = 300V
Load Current : peak of square wave
35
60A
4
30
45A
3
30A
2
IC = 15A
Load Current [A]
Collector - Emitter Voltage, V CE [V]
FMC7G30US60
90
90
25
20
15
10
1
Duty cycle : 50%
TC = 100℃
Power Dissipation = 45W
5
0
0
-50
0
50
100
0.1
150
1
10
Fig 3. Saturation Voltage vs. Case
Temperature at Variant Current Level
1000
Fig 4. Load Current vs. Frequency
20
20
Common Emitter
T C = 25℃
Common Emitter
T C = 125℃
Collector - Emitter Voltage, VCE [V]
Collector - Emitter Voltage, VCE [V]
100
Frequency [KHz]
Case Temperature, T C [℃]
16
12
8
4
30A
60A
16
12
8
60A
4
30A
IC = 15A
IC = 15A
0
0
4
8
12
16
Gate - Emitter Voltage, V GE [V]
Fig 5. Saturation Voltage vs. VGE
©2001 Fairchild Semiconductor Corporation
20
4
8
12
16
20
Gate - Emitter Voltage, VGE [V]
Fig 6. Saturation Voltage vs. VGE
FMC7G30US60 Rev. A3
Common Emitter
VGE = 0V, f = 1MHz
TC = 25℃
3000
Common Emitter
VCC = 300V, VGE = ± 15V
IC = 30A
T C = 25℃ ━━
T C = 125℃ ------
Cies
2500
Switching Time [ns]
Capacitance [pF]
FMC7G30US60
1000
3500
2000
Coes
1500
1000
Ton
Tr
100
Cres
500
10
0
1
1
10
10
Fig 8. Turn-On Characteristics vs.
Gate Resistance
Fig 7. Capacitance Characteristics
10000
Common Emitter
V CC = 300V, V GE = ± 15V
IC = 30A
T C = 25℃ ━━
T C = 125℃ ------
Common Emitter
V CC = 300V, VGE = ± 15V
IC = 30A
T C = 25℃ ━━
T C = 125℃ ------
Switching Loss [uJ]
Switching Time [ns]
1000
100
Gate Resistance, RG [Ω ]
Collector - Emitter Voltage, V CE [V]
Toff
Toff
Tf
Eon
Eoff
1000
Eoff
Tf
100
100
1
10
1
100
10
Gate Resistance, R G [Ω ]
Fig 9. Turn-Off Characteristics vs.
Gate Resistance
Fig 10. Switching Loss vs. Gate Resistance
1000
1000
Common Emitter
V GE = ± 15V, RG = 7Ω
T C = 25℃ ━━
T C = 125℃ ------
Switching Time [ns]
Common Emitter
V GE = ± 15V, RG = 7 Ω
T C = 25℃ ━━
T C = 125℃ ------
Switching Time [ns]
100
Gate Resistance, R G [ Ω ]
Ton
Tr
100
Toff
Tf
Toff
100
Tf
10
15
30
45
Collector Current, IC [A]
Fig 11. Turn-On Characteristics vs.
Collector Current
©2001 Fairchild Semiconductor Corporation
60
15
30
45
60
Collector Current, IC [A]
Fig 12. Turn-Off Characteristics vs.
Collector Current
FMC7G30US60 Rev. A3
15
Eoff
Eon
Eoff
1000
Common Emitter
RL = 10 Ω
TC = 25℃
12
Gate - Emitter Voltage, VGE [ V ]
Common Emitter
VGE = ± 15V, RG = 7 Ω
TC = 25℃ ━━
TC = 125℃ ------
Switching Loss [uJ]
FMC7G30US60
10000
300 V
V CC = 100 V
200 V
9
6
3
100
0
15
30
45
60
0
20
Collector Current, IC [A]
40
60
80
100
Gate Charge, Qg [ nC ]
Fig 13. Switching Loss vs. Collector Current
Fig 14. Gate Charge Characteristics
200
100
IC MAX. (Pulsed)
100
Collector Current, IC [A]
Collector Current, IC [A]
50us
IC MAX. (Continuous)
100us
1㎳
10
DC Operation
Single Nonrepetitive
Pulse T C = 25℃
Curves must be derated
linearly with increase
in temperature
1
Safe Operating Area
V GE = 20V, T C = 100℃
0.1
0.3
1
10
10
100
1
1000
1
10
100
1000
Collector-Emitter Voltage, V CE [V]
Collector-Emitter Voltage, VCE [V]
Fig 15. SOA Characteristics
Fig 16. Turn-Off SOA Characteristics
100
Thermal Response, Zthjc [℃/W]
Collector Current, I C [A]
5
10
1
0.1
Single Nonrepetitive
Pulse TJ ≤ 125℃
VGE = 15V
RG = 7 Ω
0
100
200
0.1
0.01
300
400
500
Collector-Emitter Voltage, VCE [V]
Fig 17. RBSOA Characteristics
©2001 Fairchild Semiconductor Corporation
1
600
700
IGBT :
DIODE :
0.005
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
Rectangular Pulse Duration [sec]
Fig 18. Transient Thermal Impedance
FMC7G30US60 Rev. A3
80
Forward Current, I
F
[A]
70
Peak Reverse Recovery Current, Irr [A]
Reverse Recovery Time, Trr [x10ns]
Common Cathode
V GE = 0V
T C = 25℃
T C = 125℃
60
50
40
30
20
10
0
0
1
2
Forward Voltage, V F [V]
Fig 19. Forward Characteristics
©2001 Fairchild Semiconductor Corporation
3
4
T rr
10
Irr
Common Cathode
di/dt = 60A/us
TC = 25℃
TC = 100℃
1
0.5
5
10
15
20
25
30
Forward Current, IF [A]
Fig 20. Reverse Recovery Characteristics
FMC7G30US60 Rev. A3
FMC7G30US60
20
90
FMC7G30US60
Package Dimension
21PM-BA (FS PKG CODE BK)
Dimensions in Millimeters
©2001 Fairchild Semiconductor Corporation
FMC7G30US60 Rev. A3
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
INTERNATIONAL.
As used herein:
1. Life support devices or systems are devices or systems
2. A critical component is any component of a life support
which, (a) are intended for surgical implant into the body,
device or system whose failure to perform can be
or (b) support or sustain life, or (c) whose failure to perform
reasonably expected to cause the failure of the life support
when properly used in accordance with instructions for use
device or system, or to affect its safety or effectiveness.
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2001 Fairchild Semiconductor Corporation
Rev. H4
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