IGBT FMG2G100US60 Molding Type Module General Description Fairchild’s Insulated Gate Bipolar Transistor (IGBT) power modules provide low conduction and switching losses as well as short circuit ruggedness. They are designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters where short circuit ruggedness is a required feature. Features • • • • • • UL Certified No. E209204 Short Circuit rated 10us @ TC = 100°C, VGE = 15V High Speed Switching Low Saturation Voltage : VCE(sat) = 2.2 V @ IC = 100A High Input Impedance Fast & Soft Anti-Parallel FWD Package Code : 7PM-GA E1/C2 Application • • • • • C1 AC & DC Motor Controls General Purpose Inverters Robotics Servo Controls UPS E2 G1 E1 G2 E2 Internal Circuit Diagram Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) IF IFM TSC PD TJ Tstg Viso Mounting Torque TC = 25°C unless otherwise noted Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Pulsed Collector Current Diode Continuous Forward Current Diode Maximum Forward Current Short Circuit Withstand Time Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Isolation Voltage Power Terminals Screw : M5 Mounting Screw : M5 @ TC = 25°C @ TC = 100°C @ TC = 100°C @ TC = 25°C @ AC 1minute FMG2G100US60 600 ± 20 100 200 100 200 10 400 -40 to +150 -40 to +125 2500 2.0 2.0 Units V V A A A A us W °C °C V N.m N.m Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature ©2001 Fairchild Semiconductor Corporation FMG2G100US60 Rev. A FMG2G100US60 September 2001 Symbol C = 25°C unless otherwise noted Parameter Test Conditions Min. Typ. Max. Units 600 -- -- V VGE = 0V, IC = 1mA -- 0.6 -- V/°C VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V --- --- 250 ± 100 uA nA VGE = 0V, IC=100mA 5.0 6.0 8.5 V IC = 100A, VGE = 15V -- 2.2 2.8 V VCE = 30V, VGE = 0V, f = 1MHz ---- 10840 963 228 ---- pF pF pF --------------- 25 50 80 110 1.6 2.4 4.0 25 60 80 240 1.7 4.3 6.0 ---200 ----------- ns ns ns ns mJ mJ mJ ns ns ns ns mJ mJ mJ VCC = 300 V, VGE = 15V = 100°C 10 -- -- us VCE = 300 V, IC = 100A, VGE = 15V ---- 425 80 200 500 --- nC nC nC Off Characteristics BVCES ∆BVCES/ ∆TJ ICES IGES Collector-Emitter Breakdown Voltage Temperature Coeff. of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current VGE = 0V, IC = 250uA On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Tsc Short Circuit Withstand Time Qg Qge Qgc Total Gate Charge Gate-Emitter Charge Gate-Collector Charge ©2001 Fairchild Semiconductor Corporation VCC = 300 V, IC = 100A, RG = 2.4Ω, VGE = 15V Inductive Load, TC = 25°C VCC = 300 V, IC = 100A, RG = 2.4Ω, VGE = 15V Inductive Load, TC = 125°C @ TC FMG2G100US60 Rev. A FMG2G100US60 Electrical Characteristics of IGBT T C Symbol Parameter VFM Diode Forward Voltage trr Diode Reverse Recovery Time Irr Diode Peak Reverse Recovery Current Qrr Diode Reverse Recovery Charge = 25°C unless otherwise noted Test Conditions TC = 25°C IF = 100A TC = 100°C IF = 100A di / dt = 200 A/us Min. -- Typ. 1.9 Max. 2.8 -- 1.8 -- TC = 25°C -- 90 130 TC = 100°C -- 130 -- TC = 25°C -- 9 12 TC = 100°C -- 12 -- TC = 25°C -- 405 790 TC = 100°C -- 780 -- Units V ns A nC Thermal Characteristics Symbol RθJC RθJC RθCS Weight Parameter Junction-to-Case (IGBT Part, per 1/2 Module) Junction-to-Case (DIODE Part, per 1/2 Module) Case-to-Sink (Conductive grease applied) Weight of Module ©2001 Fairchild Semiconductor Corporation Typ. --0.05 -- Max. 0.31 0.7 -190 Units °C/W °C/W °C/W g FMG2G100US60 Rev. A FMG2G100US60 Electrical Characteristics of DIODE T Common Emitter 20V TC = 25℃ 15V Common Emitter VGE = 15V TC = 25℃ TC = 125℃ 12V Collector Current, I C [A] Collector Current, IC [A] 210 180 150 VGE = 10V 120 90 FMG2G100US60 250 240 200 150 100 60 50 30 0 0 0 2 4 6 8 0.3 Collector - Emitter Voltage, VCE [V] Fig 1. Typical Output Characteristics 120 20 V CC = 300V Load Current : peak of square wave Common Emitter V GE = 15V 100 4 Load Current [A] 200A 3 100A 2 IC = 50A 1 80 60 40 20 Duty cycle : 50% T C = 100℃ Power Dissipation = 130W 0 0 0 50 100 150 0.1 1 10 Case Temperature, TC [℃] 100 1000 Frequency [Khz] Fig 3. Saturation Voltage vs. Case Temperature at Variant Current Level Fig 4. Load Current vs. Frequency 20 20 Common Emitter TC = 125℃ Collector - Emitter Voltage, VCE [V] Common Emitter T C = 25℃ Collector - Emitter Voltage, VCE [V] 10 Fig 2. Typical Saturation Voltage Characteristics 5 Collector - Emitter Voltage, VCE [V] 1 Collector - Emitter Voltage, V CE [V] 16 12 8 200A 4 100A IC = 50A 0 16 12 8 200A 100A 4 IC = 50A 0 0 4 8 12 16 Gate - Emitter Voltage, V GE [V] Fig 5. Saturation Voltage vs. VGE ©2001 Fairchild Semiconductor Corporation 20 0 4 8 12 16 20 Gate - Emitter Voltage, VGE [V] Fig 6. Saturation Voltage vs. VGE FMG2G100US60 Rev. A Common Emitter V GE = 0V, f = 1MHz T C = 25℃ 25000 Common Emitter VCC = 300V, VGE = +/- 15V IC = 100A 1000 0 TC = 25 C Cies Switching Time [ns] Capacitance [pF] 0 TC = 125 C 20000 15000 10000 Coes Ton Tr 100 5000 Cres 10 0 0.5 1 10 1 30 10 Gate Resistance, RG [Ω ] Collector - Emitter Voltage, V CE [V] Fig 7. Capacitance Characteristics Fig 8. Turn-On Characteristics vs. Common Emitter VCC = 300V, VGE = +/- 15V IC = 100A Common Emitter V CC = 300V, V GE = ± 15V IC = 100A T C = 25℃ T C = 125℃ 1000 0 TC = 25 C Toff 0 TC = 125 C Switching Loss [uJ] Switching Time [ns] 3000 Tf 10000 Eon Eoff Tf 100 1000 50 6 10 1 100 10 Gate Resistance, RG [Ω ] Gate Resistance, R G [Ω ] Fig 9. Turn-Off Characteristics vs. Gate Resistance Fig 10. Switching Loss vs. Gate Resistance Common Emitter VCC = 300V, VGE = +/- 15V RG = 2.4Ω Common Emitter VCC = 300V, VGE = +/- 15V IC = 100A 0 0 TC = 25 C TC = 25 C 0 0 TC = 125 C 1000 Ton 100 Tr Switching Time [ns] Switching Time [ns] TC = 125 C Toff Tf 100 Tf 10 20 40 60 80 100 120 Collector Current, IC [A] Fig 11. Turn-On Characteristics vs. Collector Current ©2001 Fairchild Semiconductor Corporation 140 1 10 Gate Resistance, Rg [Ω ] Fig 12. Turn-Off Characteristics vs. Collector Current FMG2G100US60 Rev. A FMG2G100US60 30000 FMG2G100US60 15 Gate - Emitter Voltage, VGE [ V ] Common Emitter VCC = 300V, VGE = +/- 15V RG = 2.4Ω 0 TC = 25 C 0 Switching Loss [uJ] 10000 TC = 125 C Eoff Eon 1000 Common Emitter RL = 3 Ω TC = 25℃ 12 300 V 9 200 V V CC = 100 V 6 3 0 100 20 40 60 80 100 120 140 0 100 Collector Current, IC [A] 200 300 400 500 Gate Charge, Qg [ nC ] Fig 14. Gate Charge Characteristics Fig 13. Switching Loss vs. Collector Current 500 IC MAX. (Pulsed) IC MAX. (Continuous) 50us 100 100us Collector Current, IC [A] Collector Current, IC [A] 100 1㎳ 10 DC Operation Single Nonrepetitive Pulse TC = 25℃ Curves must be derated linerarly with increase in temperature 1 0.1 10 Safe Operating Area o V GE = 20V, T C = 100 C 1 0.3 1 10 100 1000 1 10 100 1000 Collector-Emitter Voltage, V CE [V] Collector-Emitter Voltage, V CE [V] Fig 15. SOA Characteristics Fig 16. Turn-Off SOA Characteristics 600 Thermal Response, Zthjc [℃/W] 1 Collector Current, I C [A] 100 10 1 0.1 Single Nonrepetitive Pulse T J ≤ 125℃ V GE = 15V RG = 2.4 Ω 0 100 200 300 400 500 Collector-Emitter Voltage, V CE [V] Fig 17. RBSOA Characteristics ©2001 Fairchild Semiconductor Corporation 600 700 0.1 0.01 T C = 25℃ IGBT : DIODE : 1E-3 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 Rectangular Pulse Duration [sec] Fig 18. Transient Thermal Impedance FMG2G100US60 Rev. A Peak Reverse Recovery Current, Irr [A] Reverse Recovery Time, Trr [x10ns] 250 Forward Current, I F [A] 20 Common Cathode V GE = 0V T C = 25℃ T C = 125℃ 200 150 100 50 0 0 1 2 Forward Voltage, V F [V] Fig 19. Forward Characteristics ©2001 Fairchild Semiconductor Corporation 3 4 T rr Irr 10 T rr Irr Common Cathode di/dt = 200A/㎲ T C = 25℃ T C = 100℃ 5 0 20 40 60 80 100 Forward Current, IF [A] Fig 20. Reverse Recovery Characteristics FMG2G100US60 Rev. A FMG2G100US60 300 FMG2G100US60 Package Dimension 7PM-GA Dimensions in Millimeters ©2001 Fairchild Semiconductor Corporation FMG2G100US60 Rev. A TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FAST® FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ SLIENT SWITCHER® SMART START™ STAR*POWER™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TruTranslation™ TinyLogic™ UHC™ UltraFET® VCX™ STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness. provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2001 Fairchild Semiconductor Corporation Rev. H4