Diodes FMMT494QTA 120v npn silicon planar medium power transistor in sot23 Datasheet

A Product Line of
Diodes Incorporated
FMMT494
120V NPN SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT23
Feature
Mechanical Data
•
•
•
•
•
•
•
•
•
•
•
•
•
•
BVCEO > 120V
IC = 1A Continuous Collector Current
ICM = 2A Peak Pulse Current
500mW Power Dissipation
hFE characterised up to 1A for high current gain hold up
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP capable (Note 4)
•
Case: SOT23
Case Material: molded plastic, “Green” molding compound
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – Matte Tin Plated Leads, Solderable per
MIL-STD-202, Method 208
Weight 0.008 grams (approximate)
C
SOT23
E
C
B
B
E
Top View
Device Symbol
Top View
Pin-Out
Ordering Information (Notes 4 & 5)
Part Number
FMMT494TA
FMMT494TC
FMMT494QTA
FMMT494QTC
Notes:
Compliance
AEC-Q101
AEC-Q101
Automotive
Automotive
Marking
494
494
494
494
Reel size (inches)
7
13
7
13
Tape width (mm)
8
8
8
8
Quantity per reel
3,000
10,000
3,000
10,000
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen and Antimony free,"Green" and Lead-Free.
3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally
the same, except where specified.
5. For packaging details, go to our website at http://www.diodes.com
Marking Information
494
FMMT494
Document number: DS33095 Rev. 4 - 2
494 = Product Type Marking Code
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A Product Line of
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FMMT494
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current
Base Current
Symbol
VCBO
VCEO
VEBO
IC
ICM
IB
Value
140
120
7
1
2
200
Unit
V
V
V
A
A
mA
Value
500
250
197
-55 to +150
Unit
mW
°C/W
°C/W
°C
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Lead (Note 7)
Operating and Storage Temperature Range
Symbol
PD
RθJA
RθJL
TJ, TSTG
ESD Ratings (Note 8)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Notes:
Symbol
ESD HBM
ESD MM
Value
4,000
≥ 400
Unit
V
V
JEDEC Class
3A
C
6. For a device surface mounted on 15mm X 15mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions; the device is measured
when operating in a steady-state condition.
7. Thermal resistance from junction to solder-point (at the end of the collector lead).
8. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
FMMT494
Document number: DS33095 Rev. 4 - 2
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Thermal Characteristics and Derating Information
0.6
VCE(sat)
Max Power Dissipation (W)
-IC Collector Current (A)
1
Limit
100m
DC
1s
100ms
10m
10ms
1ms
15 x 15mm FR4
1oz Copper
1m
1
100µs
10
100
-VCE Collector-Emitter Voltage (V)
15 x 15mm FR4 1oz Copper
0.5
0.4
0.3
0.2
0.1
0.0
0
20
D=0.5
D=0.2
Single Pulse
40
0
100µ
D=0.05
D=0.1
1m
10m 100m
1
10
100
Pulse Width (s)
1k
Max Power Dissipation (W)
Thermal Resistance (°C/W)
15 x 15mm FR4 1oz Copper
120
80
Document number: DS33095 Rev. 4 - 2
100 120 140 160
15 x 15mm FR4 1oz Copper
100
10
1
0.1
100µ
Transient Thermal Impedance
FMMT494
80
Derating Curve
200
160
60
Temperature (°C)
Safe Operating Area
240
40
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1m
10m 100m
1
10
100
1k
Pulse Width (s)
Pulse Power Dissipation
October 2012
© Diodes Incorporated
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Diodes Incorporated
FMMT494
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 9)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector Emitter Cutoff Current
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
ICES
Collector-Emitter Saturation Voltage (Note 9)
VCE(sat)
Base-Emitter Turn-On Voltage(Note 9)
Base-Emitter Saturation Voltage(Note 9)
Output Capacitance
VBE(on)
VBE(sat)
Cobo
Min
140
120
7
—
—
—
100
100
60
20
—
—
—
—
—
Static Forward Current Transfer Ratio (Note 9)
hFE
fT
100
Transition Frequency
Notes:
Typ
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Max
—
—
—
100
100
100
—
300
—
—
200
300
1.0
1.1
10
Unit
V
V
V
nA
nA
nA
—
—
MHz
—
mV
V
V
pF
Test Condition
IC = 100µA
IC = 1mA
IE = 100µA
VCB = 120V
VEB = 5V
VCE = 120V
IC = 1mA, VCE = 10V
IC = 250mA, VCE = 10V
IC = 500mA, VCE = 10V
IC = 1A, VCE = 10V
IC = 250mA, IB = 25mA
IC = 500mA, IB = 50mA
IC = 500mA, VCE = 10V
IC = 500mA, IB = 50mA
VCB = 10V, f = 1MHz
VCE = 50V, IC = 10mA,
f = 100MHz
9. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
FMMT494
Document number: DS33095 Rev. 4 - 2
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FMMT494
Typical Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
FMMT494
Document number: DS33095 Rev. 4 - 2
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Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
A
SOT23
Dim
Min
Max
Typ
A
0.37
0.51
0.40
B
1.20
1.40
1.30
C
2.30
2.50
2.40
D
0.89
1.03 0.915
F
0.45
0.60 0.535
G
1.78
2.05
1.83
H
2.80
3.00
2.90
J
0.013 0.10
0.05
K
0.903 1.10
1.00
K1
0.400
L
0.45
0.61
0.55
M
0.085 0.18
0.11
0°
8°
α
All Dimensions in mm
B C
H
K
M
K1
D
F
J
L
G
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
Y
Z
C
X
FMMT494
Document number: DS33095 Rev. 4 - 2
Dimensions Value (in mm)
Z
2.9
X
0.8
Y
0.9
2.0
C
1.35
E
E
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FMMT494
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written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
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Copyright © 2012, Diodes Incorporated
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Document number: DS33095 Rev. 4 - 2
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