Zetex FMMT5088-1Q Sot23 npn silicon planar small signal transistor Datasheet

SOT23 NPN SILICON PLANAR
SMALL SIGNAL TRANSISTORS
FMMT5088
FMMT5089
ISSUE 2 - SEPTEMBER 1995
PARTMARKING DETAIL—
FMMT5088 - 1Q
FMMT5089 - 1R
E
C
COMPLEMENTARY TYPES — FMMT5088 - FMMT5087
FMMT5089 - None Available
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
Collector-Base Voltage
VCBO
FMMT5088 FMMT5089
35
30
UNIT
V
Collector-Emitter Voltage
VCEO
30
25
V
Emitter-Base Voltage
VEBO
4.5
4.5
V
Continuous Collector Current
IC
50
50
mA
Power Dissipation at Tamb=25°C
Ptot
330
330
mW
Operating and Storage Temperature Range Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
FMMT5088
FMMT5089
PARAMETER
SYMBOL
MIN.
MAX. MIN.
Collector-Base
Breakdown Voltage
V(BR)CBO
35
25
V
IC=1mA, IB=0
Collector-Emitter
Breakdown Voltage
V(BR)CEO
30
30
V
IC=100µ A,IE=0*
Collector- Base
Cut-Off Current
ICBO
50
50
nA
nA
VCB=20V, IE=0
VCB=15V, IE=0
Emitter-Base Current
IEBO
50
100
nA
nA
VEB(off)=3V, IC=0
VEB(off)=4.5V, IC=0
Emitter Saturation
Voltages
VCE(sat)
0.5
0.5
V
VBE(sat)
0.8
0.8
V
Static Forward
Current Transfer
Ratio
hFE
300
350
300
Transition
Frequency
fT
50
900
400
450
400
MAX. UNIT
1200
50
CONDITIONS.
IC=10mA, IB=1mA
IC=100µ A, VCE=5V
IC=1mA, VCE=5V
IC=10mA, VCE=5V
MHz
IC=500µ A, VCE=5V
f=20MHz
Output Capacitance
Cobo
4
4
pF
VCB=5V, f=1MHz, IE=0
Emitter-base
Capacitance
Cebo
10
10
pF
VBE=0.5V, f=1MHz,
IC=0
Noise Figure
N
3
2
dB
IC=200mA, VCE=5V,
Rg=10KΩ , f=10Hz to
15KHz
Small Signal Current hfe
Transfer Ratio
350
1400
450
1800
IC=1mA, VCE=5V
f=1KHz ++
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% ++ Periodic Sample test Only
Spice parameter data is available upon request for this device
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