Zetex FMMT5550-1FZ Sot23 npn silicon planar high voltage transistor Datasheet

SOT23 NPN SILICON PLANAR
HIGH VOLTAGE TRANSISTORS
FMMT5550
FMMT5551
ISSUE 4 - NOVEMBER 1996 ✪
PARTMARKING DETAILS -
COMPLEMENTARY TYPES -
FMMT5550 – 1FZ
FMMT5551 – ZG1
E
C
FMMT5550 – FMMT5400
FMMT5551 – FMMT5401
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
Collector-Base Voltage
VCBO
FMMT5550 FMMT5551
160
180
UNIT
Collector-Emitter Voltage
VCEO
140
160
V
Emitter-Base Voltage
VEBO
6
6
V
V
Continuous Collector Current
IC
600
600
mA
Power Dissipation at Tamb=25°C
Ptot
330
330
mW
Operating and Storage Temperature Range Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
FMMT5550
PAGE NUMBER
SYMBOL
MIN.
Collector-Base
Breakdown Voltage
V(BR)CBO
160
180
V
IC=100µ A
Collector-Emitter
Breakdown Voltage
V(BR)CEO
140
160
V
IC=1mA
Emitter-Base
Breakdown Voltage
V(BR)EBO
6
6
V
IE=10µ A*
Collector Cut-Off
Current
ICBO
nA
VCB=100V
VCB=100V, TA=100°C
VCB=120V
VCB=120V, TA=100°C
Static Forward
Current Transfer
Ratio
hFE
Collector-Emitter
Saturation Voltage
VCE(sat)
Base-Emitter
Saturation Voltage
VBE(sat)
Transition
Frequency
fT
Output Capacitance
Cobo
Small Signal
hfe
Noise Figure
NF
† Periodic Sample Test Only
MAX.
FMMT5551
PARAMETER
MIN.
100
100
60
60
20
MAX. UNIT
50
50
nA
µA
250
IC=1mA, VCE=5V
IC=10mA, VCE=5V
IC=50mA, VCE=5V
0.15
0.25
0.15 V
0.20 V
IC=10mA, IB=1mA
IC=50mA, IB=5mA
1.0
1.2
1.0 V
1.2 V
IC=10mA, IB=1mA
IC=50mA, IB=5mA
100
300 MHz
IC=10mA, VCE=10V
f=100MHz
6.0 pF
VCB=10V, f=1MHz
50
260
IC=1mA, VCE=10V
f=1KHz †
250
100
300
50
200
80
80
30
µA
CONDITIONS.
6.0
10
PAGE NUMBER
8
dB
IC=250µ A, VCE=5V,
RS=1KΩ
f=10Hz to 15.7KHz
.
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