FPN560 / FPN560A FPN560 FPN560A C TO-226 B E NPN Low Saturation Transistor These devices are designed for high current gain and low saturation voltage with collector currents up to 3.0 A continuous. Sourced from Process NA. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units V VCEO Collector-Emitter Voltage 60 VCBO Collector-Base Voltage 80 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current - Continuous 3.0 A TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol TA = 25°C unless otherwise noted Characteristic Max Units FPN560 / FPN560A 1.0 W Thermal Resistance, Junction to Case 50 °C/W Thermal Resistance, Junction to Ambient 125 °C/W PD Total Device Dissipation RθJC RθJA 1999 Fairchild Semiconductor Corporation (continued) Electrical Characteristics Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Max Units OFF CHARACTERISTICS BVCEO IC = 10 mA, IB = 0 BVCBO Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage 60 V BVEBO Emitter-Base Breakdown Voltage IC = 100 µA, IE = 0 80 V IE = 100 µA, IC = 0 VCB = 30 V, IE = 0 VCB = 30 V, IE = 0, TA = 100°C VEB = 4.0 V, IC = 0 5.0 ICBO Collector Cutoff Current IEBO Emitter Cutoff Current IC = 100 mA, VCE = 2.0 V IC = 500 mA, VCE = 2.0 V 70 100 250 80 40 V 100 10 100 nA µA nA ON CHARACTERISTICS* hFE DC Current Gain IC = 1.0 A, VCE = 2.0 V IC = 2.0 A, VCE = 2.0 V IC = 1.0 A, IB = 100 mA IC = 2.0 A, IB = 200 mA 560 560A 300 550 VBE(sat) Base-Emitter Saturation Voltage IC = 1.0 A, IB = 100 mA 300 350 300 1.25 VBE(on) Base-Emitter Saturation Voltage IC = 1.0 A, VCE = 2.0 V 1.0 VCE(sat) Collector-Emitter Saturation Voltage 560 560A mV mV mV V V SMALL SIGNAL CHARACTERISTICS Cobo Output Capacitance VCB = 10 V, IE = 0, f = 1.0 MHz FT Transition Frequency IC = 100 mA, VCE = 5.0 V, f = 100 MHz *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% 30 75 pF MHz FPN560 / FPN560A NPN Low Saturation Transistor (continued) 1.4 β = 10 1.2 1 - 40 °C 0.8 0.6 25 °C 0.4 125 °C VCESAT - COLLECTOR-EMITTER VOLTAGE (V) 0.2 0.001 0.01 0.1 1 I C - COLLECTOR CURRENT (A) 10 VBEON- BASE-EMITTER ON VOLTAGE (V) Base-Emitter Saturation Voltage vs Collector Current Base-Emitter On Voltage vs. Collector Current 1.4 Vce = 2.0V 1.2 1 - 40 °C 0.8 0.6 25 °C 0.4 125 °C 0.2 0.0001 Collector-Emitter Saturation Voltage vs Collector Current 0.8 450 β = 10 10 f = 1.0 MHz 400 0.6 125°C 25°C 0.4 - 40°C 0.2 350 C ibo 300 250 200 150 100 C obo 50 0 0.001 0.01 0.1 1 I C- COLLECTOR CURRENT (A) 0 0.1 10 Current Gain vs. Collector Current 500 Vce = 2.0V PD - POWE R DIS SIPATION (W) 400 300 25°C 200 - 40°C 100 0 0.0001 0.001 0.01 0.1 1 2 I C - COLLECTOR CURRENT (A) 0.2 0.5 1 2 5 10 20 V CE - COLLECTOR VOLTAGE (V) 50 100 Power Dissipation vs Ambient Temperature 125°C H FE - CURRENT GAIN 0.001 0.01 0.1 1 I C - COLLECTOR CURRENT (A) Input/Output Capacitance vs. Reverse Bias Voltage CAPACITANCE (pf) VBESAT-BASE-EMITTER SATURATION VOLTAGE(V) Typical Characteristics 5 1 TO-226 0.75 0.5 0.25 0 0 25 50 75 100 TE MPE RATURE (°C) 125 150 FPN560 / FPN560A NPN Low Saturation Transistor TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. G