FPN660/FPN660A FPN660/FPN660A PNP Low Saturation Transistor • These devices are designed for high current gain and low saturation voltage with collector currents up to 3.0A continuous. • Sourced from process PA. C BE TO-226 Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol VCEO Parameter Collector-Emitter Voltage FPN660 60 FPN660A 60 Units V VCBO VEBO Collector-Base Voltage 80 60 V Emitter-Base Voltage 5 5 IC Collector Current V 3 3 A TJ, TSTG Operating and Storage Junction Temperature Range -55 ~ +150 -55 ~ +150 °C - Continuous * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150°C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3) All voltage (V) and currents (A) are negative polarity for PNP transistors Electrical Characteristics TA=25°C unless otherwise noted Symbol Off Characteristics Parameter Test Conditions Min. Typ. Max. Units BVCEO Collector-Emitter Breakdown Voltage IC = 10mA, IB = 0 BVCBO Collector-Base Breakdown Voltage IE = 100µA, IE = 0 BVEBO Emitter-Base Breakdown Voltage IE = 100µA, IC = 0 ICBO Collector-Base Cutoff Current VCB = 30V, IE = 0 VCB = 30V, IE = 0, TA = 100°C 100 10 nA µA IEBO Emitter-Base Cutoff Current VEB = 4.0V, IC = 0 100 nA FPN660 FPN660A 55 V 80 60 V V 5.0 V On Characteristics * hFE DC Current Gain IC = 100mA, VCE = 2.0V IC = 500mA, VCE = 2.0V FPN660 FPN660A IC = 1.0A, VCE = 2.0V IC = 2.0A, VCE = 2.0V VCE(sat) Collector-Emitter Saturation Voltage IC = 1.0A, IB = 100mA IC = 2.0A, IB = 200mA 70 100 250 80 40 300 550 300 450 400 FPN660 FPN660A mV mV mV VBE(sat) Base-Emitter Saturation Voltage IC = 1.0A, IB = 100mA 1.25 V VBE(on) Base-Emitter On Voltage IC = 1.0A, VCE = 2.0V 1.0 V Small Signal Characteristics Cobo Output Capacitance VCB = 10V, IE = 0, f = 1MHz fT Transition Frequency IC = 100mA, VCE = 5.0V, f = 100MHz 45 75 pF MHz * Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0% NOTE: All voltage (V) and currents (A) are negative polarity for PNP transistors. ©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002 Symbol Parameter Max. FPN660/FPN660A 1 Units PD Total Device Dissipation RθJC Thermal Resistance, Junction to Case 50 °C/W RθJA Thermal Resistance, Junction to Ambient 125 °C/W ©2002 Fairchild Semiconductor Corporation W Rev. A2, November 2002 FPN660/FPN660A Thermal Characteristics TA=25°C unless otherwise noted FPN660/FPN660A VBESAT -BASE-EMITTER SATURATION VOLTAGE(V) β = 10 Base-Emitter Saturation β Voltage = 10 vs Collector Current β = 10 β = 10 1.4 β = 10 β = 10 1.2 1 - 40°C 0.8 0.6 25°C 0.4 125°C 0.2 0.001 0.01 0.1 1 I C - COLLECTOR CURRENT (A) 10 VBEON- BASE-EMITTER ON VOLTAGE (V) Typical Characteristics Base-Emitter On Voltage vs. Collector Current 1.6 Vce = 2.0V 1.4 1.2 1 - 40°C 0.8 0.6 25°C 0.4 125°C 0.2 0.0001 Input/Output Capacitance vs. Reverse Bias Voltage β = 10 β = 10β = 10 0.8 400 0.7 β = 10 f V=ce1.0MHz = 2.0V 350 β = 10 CAPACITANCE (pf) VCESAT - COLLECTOR-EMITTER VOLTAGE (V) Collector-Emitter Saturation Voltage vs Collector Current 0.6 125°C 0.5 25°C 0.4 0.3 - 40°C 0.2 Cobo 300 250 200 150 C ibo 100 50 0.1 0 0.01 0.1 1 I C - COLLECTOR CURRENT (A) 0 0.1 10 Figure 3. Collector-Emitter Saturation Voltage vs Collector Current 800 700 600 25°C 500 400 300 200 - 40°C 100 0 0.0001 Figure 5. Current Gain vs Collector Current ©2002 Fairchild Semiconductor Corporation 100 1 TO-226 0.75 0.5 0.25 0 0.001 0.01 0.1 1 I C - COLLECTOR CURRENT (A) 50 Ambient Temperature Vce = 2.0V PD - POWER DIS SIPATION (W) 900 125°C 0.5 1 10 20 V CE - COLLECTOR VOLTAGE (V) Figure 4. Input/Output Capacitance vs Reverse Bias Voltage Current Gain vs. Collector Current 1000 H FE - CURRENT GAIN 10 Figure 2. Base-Emitter On Voltag vs Collector Current Figure 1. Base-Emitter Saturation Voltage vs Collector Current β = 10 0.001 0.01 0.1 1 I C - COLLECTOR CURRENT (A) 10 0 25 50 75 100 TEMPERATURE ( °C) 125 150 Figure 6. Power Dissipation vs Ambient Temperature Rev. A2, November 2002 FPN660/FPN660A Package Dimensions TO-226 S4.70-4.32; S1.52-1.02; 2" TYP S7.73-7.10; S7.87-7.37; 2" TYP S1.65-1.27; 0.51 S0.760.36; S15.61-14.47; S0.51-0.36; S0.48-0.30; S1.40-1.14; PIN S1.40-1.14; 99 95 1 E E 2 B C 3 C B S4.45-3.81; 5" TYP 1 2 3 TO-226AE (95,99) S2.41-2.13; For leadformed option ordering, refer to Tape & Reel data information. Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ Bottomless™ FAST® FASTr™ CoolFET™ CROSSVOLT™ FRFET™ GlobalOptoisolator™ DOME™ EcoSPARK™ GTO™ E2CMOS™ HiSeC™ EnSigna™ I2C™ Across the board. Around the world.™ The Power Franchise™ Programmable Active Droop™ ImpliedDisconnect™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET® VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2002 Fairchild Semiconductor Corporation Rev. I1