Fairchild FQA13N50CF 500v n-channel mosfet Datasheet

®
FRFET
FQA13N50CF
500V N-Channel MOSFET
Features
Description
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These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies, active power factor
correction, electronic lamp ballast based on half bridge
topology.
15A, 500V, RDS(on) = 0.48Ω @VGS = 10 V
Low gate charge (typical 43nC)
Low Crss (typical 20pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
Fast recovery body diode (typical 100ns)
RoHS compliant
D
G
TO-3P
G D S
FQA Series
S
Absolute Maximum Ratings
Symbol
Parameter
FQA13N50CF
Units
VDSS
Drain-Source Voltage
500
V
ID
Drain Current
- Continuous (TC = 25°C)
15
A
IDM
Drain Current
- Pulsed
- Continuous (TC = 100°C)
(Note 1)
9.5
A
60
A
± 30
V
860
mJ
VGSS
Gate-Source Voltage
EAS
Single Pulsed Avalanche Energy
(Note 2)
IAR
Avalanche Current
(Note 1)
15
A
EAR
Repetitive Avalanche Energy
(Note 1)
21.8
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
PD
Power Dissipation (TC = 25°C)
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum lead temperature for soldering purposes,
1/8''"from case for 5 seconds
- Derate above 25°C
4.5
V/ns
218
W
1.56
W/°C
-55 to +150
°C
300
°C
Thermal Characteristics
Symbol
Parameter
RθJC
Thermal Resistance, Junction-to-Case
RθJS
Thermal Resistance, Case-to-Sink
RθJA
Thermal Resistance, Junction-to-Ambient
©2007 Fairchild Semiconductor Corporation
FQA13N50CF Rev. A1
1
Typ
Max
Units
--
0.58
°C/W
0.24
--
°C/W
--
40
°C/W
www.fairchildsemi.com
FQA13N50CF 500V N-Channel MOSFET
July 2007
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FQA13N50CF
FQA13N50CF
TO-3P
--
--
30
FQA13N50CF
FQA13N50CF_F109
TO-3PN
--
--
30
Electrical Characteristics
Symbol
TC = 25°C unless otherwise noted
Parameter
Test Conditions
Min
Typ
Max Units
500
--
--
V
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
∆BVDSS/
∆TJ
Breakdown Voltage Temperature Coefficient
ID = 250 µA, Referenced to 25°C
--
0.5
--
V/°C
IDSS
Zero Gate Voltage Drain Current
VDS = 500 V, VGS = 0 V
--
--
1
µA
VDS = 400 V, TC = 125°C
--
--
10
µA
IGSSF
Gate-Body Leakage Current, Forward
VGS = 30 V, VDS = 0 V
--
--
100
nA
IGSSR
Gate-Body Leakage Current, Reverse
VGS = -30 V, VDS = 0 V
--
--
-100
nA
2.0
--
4.0
V
--
0.43
0.48
Ω
--
15
--
S
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
RDS(on)
Static Drain-Source On-Resistance
VGS = 10 V, ID = 7.5A
gFS
Forward Transconductance
VDS = 40 V, ID = 7.5 A
(Note 4)
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
--
1580
2055
pF
--
180
235
pF
--
20
25
pF
--
25
60
ns
--
100
210
ns
--
130
270
ns
--
100
210
ns
--
43
56
nC
--
7.5
--
nC
--
18.5
--
nC
15
A
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
VDD = 250 V, ID = 15A,
RG = 25 Ω
(Note 4, 5)
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
VDS = 400 V, ID = 15A,
VGS = 10 V
(Note 4, 5)
Gate-Drain Charge
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
60
A
VSD
Drain-Source Diode Forward Voltage
VGS = 0 V, IS = 15 A
--
--
1.4
V
trr
Reverse Recovery Time
100
--
ns
Reverse Recovery Charge
VGS = 0 V, IS = 15 A,
dIF / dt = 100 A/µs
--
Qrr
--
0.4
--
µC
(Note 4)
NOTES:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 5.6mH, IAS =15A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 15A, di/dt ≤200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
2
FQA13N50CF Rev. A1
www.fairchildsemi.com
FQA13N50CF 500V N-Channel MOSFET
Package Marking and Ordering Information
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
VGS
15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
Top :
ID, Drain Current [A]
1
10
ID, Drain Current [A]
1
10
0
10
150°C
-55°C
25°C
0
10
Notes :
1. 250us Pulse Test
2. TC = 25°C
Notes :
1. VDS = 40V
2. 250µs Pulse Test
-1
10
-1
10
-1
0
10
2
1
10
10
4
8
10
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
1.5
IDR, Reverse Drain Current [A]
RDS(ON) [Ω],
Drain-Source On-Resistance
6
VGS = 10V
1.0
VGS = 20V
0.5
Note : TJ = 25°C
1
10
0
10
150°C
Notes :
1. VGS = 0V
25°C
2. 250µs Pulse Test
-1
0
5
10
15
20
25
30
10
35
0.2
0.4
ID, Drain Current [A]
0.6
0.8
Figure 5. Capacitance Characteristics
1.2
1.4
Figure 6. Gate Charge Characteristics
12
3000
Ciss = Cgs + Cgd (Cds = shorted)
VDS = 100V
Coss = Cds + Cgd
10
VGS, Gate-Source Voltage [V]
Crss = Cgd
2500
Ciss
Capacitance [pF]
1.0
VSD, Source-Drain voltage [V]
2000
Coss
1500
Notes ;
1. VGS = 0 V
1000
Crss
2. f = 1 MHz
500
VDS = 250V
VDS = 400V
8
6
4
2
Note : ID = 15A
0
-1
10
0
10
0
1
10
0
VDS, Drain-Source Voltage [V]
20
30
40
50
QG, Total Gate Charge [nC]
3
FQA13N50CF Rev. A1
10
www.fairchildsemi.com
FQA13N50CF 500V N-Channel MOSFET
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
3.0
RDS(ON), (Normalized)
Drain-Source On-Resistance
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
1.2
1.1
1.0
Notes :
1. VGS = 0 V
0.9
2. ID = 250 µA
2.5
2.0
1.5
1.0
Notes :
1. VGS = 10 V
0.5
2. ID = 7.5 A
0.8
-100
-50
0
50
100
150
0.0
-100
200
-50
0
50
100
150
200
TJ, Junction Temperature [°C]
TJ, Junction Temperature [°C]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
16
Operation in This Area
is Limited by R DS(on)
2
14
10 µs
12
100 µs
ID, Drain Current [A]
ID, Drain Current [A]
10
1 ms
1
10
10 ms
100 ms
DC
0
10
Notes :
1. TC = 25°C
2. TJ = 150°C
0
10
1
2
10
8
6
4
2
3. Single Pulse
-1
10
10
0
25
3
10
10
50
75
100
125
150
TC, Case Temperature [°C]
VDS, Drain-Source Voltage [V]
Figure 11. Transient Thermal Response Curve
0
D = 0 .5
0 .2
10
Z
N o te s :
1 . Z θ J C ( t) = 0 .5 8 ° C /W M a x .
-1
2 . D u ty F a c to r , D = t 1 / t 2
0 .1
3 . T J M - T C = P D M * Z θ J C ( t)
0 .0 5
PDM
0 .0 2
t1
0 .0 1
θJC
(t), Thermal Response
10
10
10
t2
s in g le p u ls e
-2
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
4
FQA13N50CF Rev. A1
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FQA13N50CF 500V N-Channel MOSFET
Typical Performance Characteristics (Continued)
FQA13N50CF 500V N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
5
FQA13N50CF Rev. A1
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FQA13N50CF 500V N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
6
FQA13N50CF Rev. A1
www.fairchildsemi.com
TO-3P
15.60 ±0.20
3.00 ±0.20
3.80 ±0.20
+0.15
1.00 ±0.20
18.70 ±0.20
23.40 ±0.20
19.90 ±0.20
1.50 –0.05
16.50 ±0.30
2.00 ±0.20
9.60 ±0.20
4.80 ±0.20
3.50 ±0.20
13.90 ±0.20
ø3.20 ±0.10
12.76 ±0.20
13.60 ±0.20
1.40 ±0.20
+0.15
5.45TYP
[5.45 ±0.30]
5.45TYP
[5.45 ±0.30]
0.60 –0.05
Dimensions in Millimeters
7
FQA13N50CF Rev. A1
www.fairchildsemi.com
FQA13N50CF 500V N-Channel MOSFET
Mechanical Dimensions
FQA13N50CF 500V N-Channel MOSFET
Mechanical Dimensions (Continued)
TO-3PN
Dimensions in Millimeters
8
FQA13N50CF Rev. A1
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2.
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Definition of Terms
Datasheet Identification
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Definition
Advance Information
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This datasheet contains the design specifications for product development.
Specifications may change in any manner without notice.
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First Production
This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.
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Rev. I30
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