Fairchild FQA8N80 F109 800v n-channel mosfet Datasheet

QFET
®
FQA8N80
800V N-Channel MOSFET
Features
Description
•
•
•
•
•
•
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies, active power factor
correction, electronic lamp ballast based on half bridge
topology.
8.4A, 800V, RDS(on) = 1.2Ω @VGS = 10 V
Low gate charge ( typical 44 nC)
Low Crss ( typical 20pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
D
G
TO-3P
FQA Series
G DS
S
Absolute Maximum Ratings
Symbol
Parameter
FQA8N80
Units
VDSS
Drain-Source Voltage
800
V
ID
Drain Current
- Continuous (TC = 25°C)
8.4
A
IDM
Drain Current
- Pulsed
VGSS
Gate-Source Voltage
± 30
V
EAS
Single Pulsed Avalanche Energy
(Note 2)
850
mJ
IAR
Avalanche Current
(Note 1)
8.4
A
EAR
Repetitive Avalanche Energy
(Note 1)
22
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
PD
Power Dissipation (TC = 25°C)
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
- Continuous (TC = 100°C)
(Note 1)
- Derate above 25°C
5.3
A
33.6
A
4.0
V/ns
220
W
1.75
W/°C
-55 to +150
°C
300
°C
Thermal Characteristics
Symbol
Parameter
RθJC
Thermal Resistance, Junction-to-Case
RθCS
Thermal Resistance, Case-to-Sink
RθJA
Thermal Resistance, Junction-to-Ambient
©2006 Fairchild Semiconductor Corporation
FQA8N80 Rev. A1
1
Typ
Max
Units
--
0.57
°C/W
0.24
--
°C/W
--
40
°C/W
www.fairchildsemi.com
FQA8N80 800V N-Channel MOSFET
September 2006
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FQA8N80
FQA8N80
TO-3P
--
--
30
FQA8N80
FQA8N80_F109
TO-3PN
--
--
30
Electrical Characteristics
Symbol
TC = 25°C unless otherwise noted
Parameter
Test Conditions
Min
Typ
Max Units
800
--
--
V
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
∆BVDSS/
∆TJ
Breakdown Voltage Temperature Coefficient
ID = 250 µA, Referenced to 25°C
--
0.95
--
V/°C
IDSS
Zero Gate Voltage Drain Current
VDS = 800 V, VGS = 0 V
--
--
10
µA
VDS = 640 V, TC = 125°C
--
--
100
µA
IGSSF
Gate-Body Leakage Current, Forward
VGS = 30 V, VDS = 0 V
--
--
100
nA
IGSSR
Gate-Body Leakage Current, Reverse
VGS = -30 V, VDS = 0 V
--
--
-100
nA
3.0
--
5.0
V
--
0.94
1.2
Ω
--
8.8
--
S
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
RDS(on)
Static Drain-Source On-Resistance
VGS = 10 V, ID = 4.2 A
gFS
Forward Transconductance
VDS = 50 V, ID = 4.2 A
(Note 4)
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
--
1800
2350
pF
--
180
235
pF
--
20
26
pF
--
40
90
ns
--
110
230
ns
--
100
210
ns
--
80
170
ns
--
44
57
nC
--
10
--
nC
--
20
--
nC
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
VDD = 400 V, ID = 8.4A,
RG = 25 Ω
(Note 4, 5)
VDS = 640 V, ID = 8.4A,
VGS = 10 V
(Note 4, 5)
Gate-Drain Charge
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
8.4
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
33.6
A
VSD
Drain-Source Diode Forward Voltage
VGS = 0 V, IS =8.4 A
--
--
1.4
V
trr
Reverse Recovery Time
690
--
ns
Reverse Recovery Charge
VGS = 0 V, IS = 8.4 A,
dIF / dt = 100 A/µs
--
Qrr
--
8.2
--
µC
(Note 4)
NOTES:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 22.6mH, IAS =8.4A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 8.4A, di/dt ≤200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
FQA8N80 Rev. A1
2
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FQA8N80 800V N-Channel MOSFET
Package Marking and Ordering Information
FQA8N80 800V N-Channel MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
VGS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
Top :
ID, Drain Current [A]
1
10
ID, Drain Current [A]
1
10
0
10
o
150 C
o
25 C
0
10
o
-55 C
※ Notes :
1. 250µs Pulse Test
2. TC = 25℃
-1
10
※ Notes :
1. VDS = 50V
2. 250µ s Pulse Test
-1
-1
0
10
10
1
10
2
10
4
6
8
10
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
2.5
IDR, Reverse Drain Current [A]
RDS(ON) [Ω ],
Drain-Source On-Resistance
3.0
VGS = 10V
2.0
VGS = 20V
1.5
1.0
1
10
0
10
150℃
25℃
※ Notes :
1. VGS = 0V
2. 250µs Pulse Test
※ Note : TJ = 25℃
0.5
-1
0
5
10
15
20
25
10
30
0.2
0.4
0.6
Figure 5. Capacitance Characteristics
3500
VGS, Gate-Source Voltage [V]
Capacitance [pF]
1.4
VDS = 160V
Ciss
2000
Coss
1500
1000
1.2
12
10
2500
1.0
Figure 6. Gate Charge Characteristics
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
3000
0.8
VSD, Source-Drain voltage [V]
ID, Drain Current [A]
※ Notes :
1. VGS = 0 V
2. f = 1 MHz
Crss
500
VDS = 400V
VDS = 640V
8
6
4
2
※ Note : ID = 8.4 A
0
-1
10
0
0
10
1
10
FQA8N80 Rev. A1
0
10
20
30
40
50
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
3
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FQA8N80 800V N-Channel MOSFET
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
3.0
RDS(ON), (Normalized)
Drain-Source On-Resistance
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
1.2
1.1
1.0
※ Notes :
1. VGS = 0 V
2. ID = 250 µA
0.9
0.8
-100
-50
0
50
100
150
2.5
2.0
1.5
1.0
※ Notes :
1. VGS = 10 V
2. ID = 4.2 A
0.5
0.0
-100
200
-50
0
50
100
150
200
o
o
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
9.0
2
Operation in This Area
is Limited by R DS(on)
7.5
100µ s
1
10
10µ s
ID, Drain Current [A]
ID, Drain Current [A]
10
1 ms
10 ms
DC
0
10
-1
10
※ Notes :
o
1. TC = 25 C
6.0
4.5
3.0
1.5
o
2. TJ = 150 C
3. Single Pulse
-2
10
0
10
1
2
10
0.0
25
3
10
10
50
75
100
125
150
TC, Case Temperature [℃]
VDS, Drain-Source Voltage [V]
Zθ JC(t), Thermal Response
Figure 11. Transient Thermal Response Curve
D = 0 .5
※ N o te s :
1 . Z θ JC (t) = 0 .5 7 ℃ /W M a x .
2 . D u ty F a c to r, D = t 1 /t 2
3 . T J M - T C = P D M * Z θ J C (t)
0 .2
10
-1
0 .1
PDM
0 .0 5
t1
0 .0 2
0 .0 1
10
-2
10
-5
t2
s in g le p u ls e
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]
FQA8N80 Rev. A1
4
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FQA8N80 800V N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FQA8N80 Rev. A1
5
www.fairchildsemi.com
FQA8N80 800V N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
FQA8N80 Rev. A1
6
www.fairchildsemi.com
FQA8N80 800V N-Channel MOSFET
Mechanical Dimensions
TO-3P
15.60 ±0.20
3.00 ±0.20
3.80 ±0.20
+0.15
1.00 ±0.20
18.70 ±0.20
23.40 ±0.20
19.90 ±0.20
1.50 –0.05
16.50 ±0.30
2.00 ±0.20
9.60 ±0.20
4.80 ±0.20
3.50 ±0.20
13.90 ±0.20
ø3.20 ±0.10
12.76 ±0.20
13.60 ±0.20
1.40 ±0.20
+0.15
5.45TYP
[5.45 ±0.30]
5.45TYP
[5.45 ±0.30]
0.60 –0.05
Dimensions in Millimeters
FQA8N80 Rev. A1
7
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FQA8N80 800V N-Channel MOSFET
Mechanical Dimensions (Continued)
TO-3PN
Dimensions in Millimeters
FQA8N80 Rev. A1
8
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Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
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This datasheet contains final specifications. Fairchild
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any time without notice in order to improve design.
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Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I20
9
FQA8N80 Rev. A1
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FQA8N80 800V N-Channel MOSFET
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