Fairchild FQA8N90C 900v n-channel mosfet Datasheet

QFET
®
FQA8N90C_F109
900V N-Channel MOSFET
Features
Description
•
•
•
•
•
•
•
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies, active power factor
correction, electronic lamp ballast based on half bridge
topology.
8A, 900V, RDS(on) = 1.9Ω @VGS = 10 V
Low gate charge ( typical 35 nC)
Low Crss ( typical 12pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
RoHS compliant
D
G
TO-3PN
FQA Series
G DS
S
Absolute Maximum Ratings
Symbol
Parameter
FQA8N90C_F109
Units
VDSS
Drain-Source Voltage
900
V
ID
Drain Current
- Continuous (TC = 25°C)
8.0
A
IDM
Drain Current
- Pulsed
- Continuous (TC = 100°C)
(Note 1)
5.1
A
32
A
VGSS
Gate-Source Voltage
± 30
V
EAS
Single Pulsed Avalanche Energy
(Note 2)
850
mJ
IAR
Avalanche Current
(Note 1)
8.0
A
EAR
Repetitive Avalanche Energy
(Note 1)
24
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
PD
Power Dissipation (TC = 25°C)
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
- Derate above 25°C
4.0
V/ns
240
W
1.92
W/°C
-55 to +150
°C
300
°C
Thermal Characteristics
Symbol
Parameter
RθJC
Thermal Resistance, Junction-to-Case
RθCS
Thermal Resistance, Case-to-Sink
RθJA
Thermal Resistance, Junction-to-Ambient
©2007 Fairchild Semiconductor Corporation
FQA8N90C_F109 Rev. A
1
Typ
Max
Units
--
0.52
°C/W
0.24
--
°C/W
--
40
°C/W
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FQA8N90C_F109 900V N-Channel MOSFET
November 2007
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FQA8N90C
FQA8N90C_F109
TO-3PN
--
--
30
Electrical Characteristics
Symbol
TC = 25°C unless otherwise noted
Parameter
Test Conditions
Min
Typ
Max Units
900
--
--
V
--
V/°C
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
∆BVDSS/
∆TJ
Breakdown Voltage Temperature Coefficient
ID = 250 µA, Referenced to 25°C
--
0.95
IDSS
Zero Gate Voltage Drain Current
VDS = 900 V, VGS = 0 V
--
--
10
µA
VDS = 720 V, TC = 125°C
--
--
100
µA
IGSSF
Gate-Body Leakage Current, Forward
VGS = 30 V, VDS = 0 V
--
--
100
nA
IGSSR
Gate-Body Leakage Current, Reverse
VGS = -30 V, VDS = 0 V
--
--
-100
nA
VDS = VGS, ID = 250 µA
3.0
--
5.0
V
On Characteristics
VGS(th)
Gate Threshold Voltage
RDS(on)
Static Drain-Source On-Resistance
VGS = 10 V, ID = 4.0 A
gFS
Forward Transconductance
VDS = 50 V, ID = 4.0 A
(Note 4)
--
1.6
1.9
Ω
--
5.5
--
S
--
1600
2080
pF
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
--
130
170
pF
--
12
15
pF
--
40
90
ns
--
110
230
ns
--
70
150
ns
--
70
150
ns
--
35
45
nC
--
10
--
nC
--
14
--
nC
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
VDD = 450 V, ID = 11.0A,
RG = 25 Ω
(Note 4, 5)
VDS = 720 V, ID = 11.0A,
VGS = 10 V
(Note 4, 5)
Gate-Drain Charge
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
8.0
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
32.0
A
VSD
Drain-Source Diode Forward Voltage
VGS = 0 V, IS = 8.0 A
--
--
1.4
V
trr
Reverse Recovery Time
--
530
--
ns
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 8.0 A,
dIF / dt = 100 A/µs
--
5.8
--
µC
(Note 4)
NOTES:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 25mH, IAS =8.0A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 8.0A, di/dt ≤200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
FQA8N90C_F109 Rev. A
2
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FQA8N90C_F109 900V N-Channel MOSFET
Package Marking and Ordering Information
FQA8N90C_F109 900V N-Channel MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
VGS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
Top :
ID, Drain Current [A]
1
10
ID, Drain Current [A]
1
10
0
10
o
150 C
o
0
-55 C
o
10
25 C
※ Notes :
1. 250µs Pulse Test
2. TC = 25℃
-1
10
※ Notes :
1. VDS = 50V
2. 250µs Pulse Test
-1
-1
0
10
10
1
10
2
10
4
6
8
10
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
3.5
IDR, Reverse Drain Current [A]
RDS(ON) [Ω ],
Drain-Source On-Resistance
4.0
VGS = 10V
3.0
VGS = 20V
2.5
2.0
1.5
1
10
0
10
150℃
25℃
※ Notes :
1. VGS = 0V
2. 250µs Pulse Test
※ Note : TJ = 25℃
1.0
-1
0
5
10
15
10
20
0.2
0.4
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
3000
1.2
1.4
VDS = 180V
10
Ciss
1500
Coss
※ Notes :
1. VGS = 0 V
2. f = 1 MHz
1000
500
1.0
12
VGS, Gate-Source Voltage [V]
Capacitance [pF]
2000
0.8
Figure 6. Gate Charge Characteristics
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
2500
0.6
VSD, Source-Drain voltage [V]
Crss
VDS = 450V
VDS = 720V
8
6
4
2
※ Note : ID = 8A
0
-1
10
0
10
0
1
10
FQA8N90C_F109 Rev. A
0
5
10
15
20
25
30
35
40
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
3
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Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
3.0
RDS(ON), (Normalized)
Drain-Source On-Resistance
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
1.2
1.1
1.0
※ Notes :
1. VGS = 0 V
2. ID = 250 µA
0.9
0.8
-100
-50
0
50
100
150
2.5
2.0
1.5
1.0
※ Notes :
1. VGS = 10 V
2. ID = 4.0 A
0.5
0.0
-100
200
-50
0
50
100
150
200
o
o
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
10
Operation in This Area
is Limited by R DS(on)
2
10 µs
8
ID, Drain Current [A]
ID, Drain Current [A]
10
100 µs
1
10
1 ms
10 ms
DC
0
10
※ Notes :
o
1. TC = 25 C
o
2. TJ = 150 C
3. Single Pulse
-1
10
0
1
10
2
10
4
2
-2
10
6
0
25
3
10
10
50
75
100
125
150
TC, Case Temperature [℃]
VDS, Drain-Source Voltage [V]
Figure 11. Transient Thermal Response Curve
Zθ JC(t), Thermal Response
10
0
D = 0 .5
10
※ N o te s :
1 . Z θ J C (t) = 0 .5 2 ℃ /W M a x .
2 . D u ty F a c to r, D = t 1 /t 2
3 . T J M - T C = P D M * Z θ J C (t)
0 .2
-1
0 .1
PDM
0 .0 5
t1
0 .0 2
0 .0 1
10
10
-5
t2
s in g le p u ls e
-2
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]
FQA8N90C_F109 Rev. A
4
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FQA8N90C_F109 900V N-Channel MOSFET
Typical Performance Characteristics (Continued)
FQA8N90C_F109 900V N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FQA8N90C_F109 Rev. A
5
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FQA8N90C_F109 900V N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
FQA8N90C_F109 Rev. A
6
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FQA8N90C_F109 900V N-Channel MOSFET
Mechanical Dimensions
TO-3PN
Dimensions in Millimeters
FQA8N90C_F109 Rev. A
7
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Definition
Advance Information
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This datasheet contains the design specifications for product
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First Production
This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make
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Rev. I31
8
FQA8N90C_F109 Rev. A
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FQA8N90C_F109 900V N-Channel MOSFET
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