Fairchild FQB5N50CF 500v n-channel mosfet Datasheet

FRFET
TM
FQB5N50CF
500V N-Channel MOSFET
Features
Description
• 5A, 500V, RDS(on) = 1.55 Ω @VGS = 10 V
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
• Low gate charge ( typical 18nC)
• Low Crss ( typical 15pF)
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high efficiency switched mode power supplies, electronic lamp ballasts
based on half bridge topology.
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
D
D
G
G
D2-PAK
S
FQB Series
S
Absolute Maximum Ratings
Symbol
Parameter
VDSS
Drain-Source Voltage
ID
Drain Current
- Continuous (TC = 25°C)
IDM
Drain Current
- Pulsed
- Continuous (TC = 100°C)
(Note 1)
FQB5N50CF
Units
500
V
5
A
3.2
A
20
A
± 30
V
300
mJ
VGSS
Gate-Source Voltage
EAS
Single Pulsed Avalanche Energy
(Note 2)
IAR
Avalanche Current
(Note 1)
5
A
EAR
Repetitive Avalanche Energy
(Note 1)
9.6
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
PD
Power Dissipation (TC = 25°C)
96
W
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
- Derate above 25°C
0.76
W/°C
-55 to +150
°C
300
°C
Thermal Characteristics
Symbol
Parameter
FQB5N50CF
Units
1.3
°C/W
Thermal Resistance, Junction-to-Ambient*
40
°C/W
Thermal Resistance, Junction-to-Ambient
62.5
°C/W
RθJC
Thermal Resistance, Junction-to-Case
RθJA
RθJA
* When mounted on the minimum pad size recommended (PCB Mount)
©2006 Fairchild Semiconductor Corporation
FQB5N50CF Rev. A
1
www.fairchildsemi.com
FQB5N50CF 500V N-Channel MOSFET
May 2006
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FQB5N50CF
FQB5N50CFTM
D2-PAK
330mm
24mm
800
FQB5N50CF
FQB5N50CFTF
D2-PAK
330mm
24mm
800
Electrical Characteristics
Symbol
TC = 25°C unless otherwise noted
Parameter
Test Conditions
Min
Typ
Max Units
500
--
--
V
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
∆BVDSS/
∆TJ
Breakdown Voltage Temperature Coefficient
ID = 250 µA, Referenced to 25°C
--
0.5
--
V/°C
IDSS
Zero Gate Voltage Drain Current
VDS = 500 V, VGS = 0 V
--
--
10
µA
VDS = 400 V, TC = 125°C
--
--
100
µA
IGSSF
Gate-Body Leakage Current, Forward
VGS = 30 V, VDS = 0 V
--
--
100
nA
IGSSR
Gate-Body Leakage Current, Reverse
VGS = -30 V, VDS = 0 V
--
--
-100
nA
2.0
--
4.0
V
--
1.3
1.55
Ω
--
5.2
--
S
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
RDS(on)
Static Drain-Source On-Resistance
VGS = 10 V, ID = 2.5A
gFS
Forward Transconductance
VDS = 40 V, ID = 2.5 A
(Note 4)
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
--
480
625
pF
--
80
105
pF
--
15
20
pF
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 250 V, ID = 5A,
RG = 25 Ω
(Note 4, 5)
VDS = 400 V, ID = 5A,
VGS = 10 V
(Note 4, 5)
--
12
35
ns
--
46
100
ns
--
50
110
ns
--
48
105
ns
--
18
24
nC
--
2.2
--
nC
--
9.7
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
5
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
20
A
VSD
Drain-Source Diode Forward Voltage
VGS = 0 V, IS = 5 A
--
--
1.4
V
trr
Reverse Recovery Time
--
65
--
ns
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 5 A,
dIF / dt = 100 A/µs
--
110
--
nC
(Note 4)
NOTES:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 21.5mH, IAS = 5A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 5A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
2
FQB5N50CF Rev. A
www.fairchildsemi.com
FQB5N50CF 500V N-Channel MOSFET
Package Marking and Ordering Information
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
VGS
Top :
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
Bottom : 5.0 V
ID, Drain Current [A]
10
1
10
ID, Drain Current [A]
1
0
10
-1
0
10
25°C
-55°C
0
10
Notes :
1. VDS = 40V
Notes :
1. 250µs Pulse Test
2. TC = 25°C
-1
10
150°C
2. 250µs Pulse Test
-1
10
2
1
10
10
4
6
8
10
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
4.5
1
10
3.5
IDR, Reverse Drain Current [A]
RDS(ON) [Ω],
Drain-Source On-Resistance
4.0
VGS = 10V
3.0
2.5
2.0
VGS = 20V
1.5
1.0
Note : TJ = 25°C
0
10
150?
Notes :
1. VGS = 0V
25?
2. 250µs Pulse Test
-1
0.5
0
5
10
10
15
0.2
0.4
0.6
ID, Drain Current [A]
0.8
1.0
1.2
1.4
VSD, Source-Drain voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
1200
12
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
800
10
VGS, Gate-Source Voltage [V]
Capacitance [pF]
1000
Ciss
Coss
600
400
Notes ;
1. VGS = 0 V
Crss
2. f = 1 MHz
200
VDS = 100V
VDS = 250V
8
VDS = 400V
6
4
2
Note : ID = 5A
0
-1
10
0
0
10
0
1
10
10
15
20
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
3
FQB5N50CF Rev. A
5
www.fairchildsemi.com
FQB5N50CF 500V N-Channel MOSFET
Typical Performance Characteristics
FQB5N50CF 500V N-Channel MOSFET
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
3.0
RDS(ON), (Normalized)
Drain-Source On-Resistance
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
1.2
1.1
1.0
Notes :
1. VGS = 0 V
0.9
2. ID = 250µA
2.5
2.0
1.5
1.0
Notes :
1. VGS = 10 V
0.5
2. ID = 2.5 A
0.8
-100
-50
0
50
100
150
0.0
-100
200
-50
0
50
100
150
200
TJ, Junction Temperature [°C]
TJ, Junction Temperature [°C]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
2
6
10
Operation in This Area
is Limited by R DS(on)
5
ID, Drain Current [A]
ID, Drain Current [A]
10 µs
100 µs
1
10
1ms
10ms
100ms
DC
0
10
* Notes :
o
1. TC = 25 C
4
3
2
1
o
2. TJ = 150 C
3. Single Pulse
-1
10
0
10
1
2
10
0
25
3
10
10
50
75
100
125
150
175
o
VDS, Drain-SourceVoltage[V]
TC, Case Temperature [ C]
Figure 11. Transient Thermal Response Curve
0
10
Z? JC(t), Thermal Response
D=0.5
0.2
0.1
-1
10
0.05
PDM
0.02
0.01
t1
t2
* Notes :
0
1. ZθJC(t) = 1.3 C/W Max.
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * ZθJC(t)
-2
10
single pulse
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
t1, Square Wave Pulse Duration [sec]
4
FQB5N50CF Rev. A
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FQB5N50CF 500V N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
5
FQB5N50CF Rev. A
www.fairchildsemi.com
FQB5N50CF 500V N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
6
FQB5N50CF Rev. A
www.fairchildsemi.com
FQB5N50CF 500V N-Channel MOSFET
Mechanical Dimensions
D2-PAK
Dimensions in Millimeters
7
FQB5N50CF Rev. A
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Advance Information
Formative or In
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This datasheet contains the design specifications for
product development. Specifications may change in
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First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
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Rev. I19
8
FQB5N50CF Rev. A
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FQB5N50CF 500V N-Channel MOSFET
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