FRFET TM FQB6N40CF 400V N-Channel MOSFET Features Description • 6A, 400V, RDS(on) = 1.1 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 16nC) • Low Crss ( typical 15pF) This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, electronic lamp ballasts based on half bridge topology. • Fast switching • 100% avalanche tested • Improved dv/dt capability • Fast recovery body diode (typical 70ns) D D G G D2-PAK S FQB Series S Absolute Maximum Ratings Symbol Parameter FQB6N40CF Units 400 V 6 A 3.8 A 24 A VDSS Drain-Source Voltage ID Drain Current IDM Drain Current VGSS Gate-Source Voltage EAS Single Pulsed Avalanche Energy (Note 2) IAR Avalanche Current (Note 1) 6 A EAR Repetitive Avalanche Energy (Note 1) 11.3 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) PD Power Dissipation (TC = 25°C) TJ, TSTG Operating and Storage Temperature Range TL Maximum lead temperature for soldering purposes, 1/8∀ from case for 5 seconds - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed (Note 1) - Derate above 25°C ± 30 V 270 mJ 4.5 V/ns 113 W 0.9 W/°C -55 to +150 °C 300 °C Thermal Characteristics Symbol Parameter RθJC Thermal Resistance, Junction-to-Case RθJA Thermal Resistance, Junction-to-Ambient * RθJA Thermal Resistance, Junction-to-Ambient FQB6N40CF Units 1.1 °C/W 40 °C/W 62.5 °C/W * When mounted on the minimum pad size recommended (PCB Mount) ©2005 Fairchild Semiconductor Corporation FQB6N40CF Rev. A 1 www.fairchildsemi.com FQB6N40CF 400V N-Channel MOSFET December 2005 Device Marking FQB6N40CF Device Package FQB6N40CFTM Electrical Characteristics Symbol Reel Size Tape Width Quantity 330mm 24mm 800 2 D -PAK TC = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units 400 -- -- V -- V/°C Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA ∆BVDSS/ ∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 0.54 IDSS Zero Gate Voltage Drain Current VDS = 400 V, VGS = 0 V -- -- 10 µA VDS = 320 V, TC = 125°C -- -- 100 µA IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA 2.0 -- 4.0 V -- 0.9 1.1 Ω -- 4.7 -- S -- 480 625 pF -- 80 105 pF -- 15 20 pF -- 13 35 ns -- 65 140 ns -- 21 55 ns -- 38 85 ns -- 16 20 nC -- 2.3 -- nC -- 8.2 -- nC 6 A On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 3 A gFS Forward Transconductance VDS = 40 V, ID = 3 A (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 200 V, ID = 6A, RG = 25 Ω (Note 4, 5) VDS = 320 V, ID = 6A, VGS = 10 V (Note 4, 5) Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 24 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 6 A -- -- 1.4 V trr Reverse Recovery Time 70 -- ns Reverse Recovery Charge VGS = 0 V, IS = 6 A, dIF / dt = 100 A/µs -- Qrr -- 0.12 -- µC (Note 4) NOTES: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 13.7mH, IAS = 6A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 6A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature FQB6N40CF Rev. A 2 www.fairchildsemi.com FQB6N40CF 400V N-Channel MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V Bottom : 5.0 V Top : ID, Drain Current [A] 1 10 ID, Drain Current [A] 1 10 0 10 o 150 C o 25 C o -55 C 0 10 ∝ Notes : 1. VDS = 40V 2. 250レs Pulse Test ∝ Notes : 1. 250レs Pulse Test 2. TC = 25∩ -1 10 -1 -1 0 10 10 1 10 10 2 4 6 8 10 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue 3.5 IDR, Reverse Drain Current [A] RDS(ON) [ヘ ], Drain-Source On-Resistance 1 10 3.0 VGS = 10V 2.5 2.0 1.5 VGS = 20V 1.0 0 10 150∩ ∝ Notes : 1. VGS = 0V 2. 250レs Pulse Test 25∩ ∝ Note : TJ = 25∩ 0.5 -1 0 5 10 15 10 20 0.2 0.4 ID, Drain Current [A] Figure 5. Capacitance Characteristics 1200 1.0 1.2 1.4 12 VDS = 80V 10 VGS, Gate-Source Voltage [V] Capacitances [pF] 0.8 Figure 6. Gate Charge Characteristics Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 1000 0.6 VSD, Source-Drain voltage [V] 800 Ciss Coss 600 400 ∝ Note ; 1. VGS = 0 V 2. f = 1 MHz Crss 200 VDS = 200V 8 VDS = 320V 6 4 2 ∝ Note : ID = 6A 0 -1 10 0 10 0 1 10 5 10 15 20 QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V] FQB6N40CF Rev. A 0 3 www.fairchildsemi.com FQB6N40CF 400V N-Channel MOSFET Typical Performance Characteristics FQB6N40CF 400V N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 1.1 1.0 ∝ Notes : 1. VGS = 0 V 2. ID = 250 レA 0.9 0.8 -100 -50 0 50 100 150 2.5 2.0 1.5 1.0 ∝ Notes : 1. VGS = 10 V 2. ID = 3 A 0.5 0.0 -100 200 -50 0 100 150 200 TJ, Junction Temperature [ C] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature 6 2 10 Operation in This Area is Limited by R DS(on) 10 µs 5 10 ID, Drain Current [A] 100 µs 1 ID, Drain Current [A] 50 o o TJ, Junction Temperature [ C] 1 ms 10 ms 100 ms 0 10 DC 4 3 2 -1 10 ∝ Notes : o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse 1 0 25 -2 10 0 10 1 2 10 3 10 10 50 75 100 125 150 TC, Case Temperature [∩ ] VDS, Drain-Source Voltage [V] Figure 11. Transient Thermal Response Curve ZヨJC(t), Thermal Response 10 0 D = 0 .5 0 .2 0 .1 10 ∝ N o te s : 1 . Z ヨ J C (t) = 1 .7 1 ∩ /W M a x . 2 . D u ty F a c to r, D = t 1 /t 2 3 . T J M - T C = P D M * Z ヨ J C (t) 0 .0 5 -1 0 .0 2 PDM 0 .0 1 s in g le p u ls e 10 t1 t2 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ] FQB6N40CF Rev. A 4 www.fairchildsemi.com FQB6N40CF 400V N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FQB6N40CF Rev. A 5 www.fairchildsemi.com FQB6N40CF 400V N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms FQB6N40CF Rev. A 6 www.fairchildsemi.com 4.50 ±0.20 9.90 ±0.20 +0.10 2.00 ±0.10 (0.75) 0° 0.80 ±0.10 1.27 ±0.10 2.54 TYP ~3 2.54 ±0.30 15.30 ±0.30 0.10 ±0.15 2.40 ±0.20 4.90 ±0.20 1.40 ±0.20 9.20 ±0.20 1.30 –0.05 1.20 ±0.20 (0.40) D2-PAK ° +0.10 0.50 –0.05 2.54 TYP 9.20 ±0.20 (2XR0.45) 4.90 ±0.20 15.30 ±0.30 10.00 ±0.20 (7.20) (1.75) 10.00 ±0.20 (8.00) (4.40) 0.80 ±0.10 Dimensions in Millimeters FQB6N40CF Rev. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I17 8 FQB6N40CF Rev. A www.fairchildsemi.com FQB6N40CF 400V N-Channel MOSFET TRADEMARKS