Fairchild FQPF10N60CF 600v n-channel mosfet Datasheet

FRFET
TM
FQP10N60CF / FQPF10N60CF
600V N-Channel MOSFET
Features
Description
• 9A, 600V, RDS(on) = 0.8Ω @VGS = 10 V
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
• Low gate charge ( typical 44 nC)
• Low Crss ( typical 18 pF)
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
D
G
TO-220
G DS
FQP Series
TO-220F
GD S
FQPF Series
S
Absolute Maximum Ratings
Symbol
Parameter
VDSS
Drain-Source Voltage
ID
Drain Current
FQP10N60CF FQPF10N60CF
Units
600
V
- Continuous (TC = 25°C)
9.0
9.0 *
A
- Continuous (TC = 100°C)
5.7
5.7 *
A
36 *
A
IDM
Drain Current
VGSS
Gate-Source Voltage
- Pulsed
(Note 1)
36
± 30
V
EAS
Single Pulsed Avalanche Energy
(Note 2)
583
mJ
IAR
Avalanche Current
(Note 1)
9.0
A
EAR
Repetitive Avalanche Energy
(Note 1)
16.9
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
PD
Power Dissipation (TC = 25°C)
- Derate above 25°C
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
169
50
W
1.35
0.4
W/°C
-55 to +150
°C
°C
300
* Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
Parameter
FQP10N60CF FQPF10N60CF
Units
RθJC
Thermal Resistance, Junction-to-Case
0.74
2.5
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
62.5
62.5
°C/W
©2006 Fairchild Semiconductor Corporation
FQP10N60CF / FQPF10N60CF Rev. A
1
www.fairchildsemi.com
FQP10N60CF / FQPF10N60CF 600V N-Channel MOSFET
February 2007
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FQP10N60CF
FQP10N60CF
TO-220
--
--
50
FQPF10N60CF
FQPF10N60CF
TO-220F
--
--
50
Electrical Characteristics
Symbol
TC = 25°C unless otherwise noted
Parameter
Test Conditions
Min
Typ
Max
Units
600
--
--
V
--
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
∆BVDSS/
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250 µA, Referenced to 25°C
--
0.7
IDSS
Zero Gate Voltage Drain Current
VDS = 600 V, VGS = 0 V
--
--
10
µA
VDS = 480 V, TC = 125°C
--
--
100
µA
V/°C
IGSSF
Gate-Body Leakage Current, Forward
VGS = 30 V, VDS = 0 V
--
--
100
nA
IGSSR
Gate-Body Leakage Current, Reverse
VGS = -30 V, VDS = 0 V
--
--
-100
nA
2.0
--
4.0
V
--
0.61
0.8
Ω
--
8.0
--
S
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 4.5 A
gFS
Forward Transconductance
VDS = 40 V, ID = 4.5 A
(Note 4)
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
--
1570
2040
pF
--
166
215
pF
--
18
24
pF
--
23
55
ns
--
69
150
ns
--
144
300
ns
--
77
165
ns
--
44
57
nC
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 300 V, ID = 9.0A,
RG = 25 Ω
(Note 4, 5)
VDS = 480 V, ID = 9.0A,
VGS = 10 V
(Note 4, 5)
--
6.7
--
nC
--
18.5
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
9.0
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
36
A
VSD
Drain-Source Diode Forward Voltage
VGS = 0 V, IS = 9.0 A
--
--
1.4
V
trr
Reverse Recovery Time
--
90
--
ns
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 9.0A,
dIF / dt = 100 A/µs
--
0.3
--
µC
(Note 4)
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 13.2mH, IAS = 9.0 A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 9.0A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
2
FQP10N60CF / FQPF10N60CF Rev. A
www.fairchildsemi.com
FQP10N60CF / FQPF10N60CF 600V N-Channel MOSFET
Package Marking and Ordering Information
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
VGS
Top :
ID, Drain Current [A]
1
10
ID, Drain Current [A]
1
10
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
0
10
-1
0
0
10
2. 250µs Pulse Test
-1
10
2
1
10
-55°C
25°C
* Notes :
1. VDS = 40V
* Notes :
1. 250µs Pulse Test
2. TC = 25°C
10
150°C
10
4
6
8
10
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
IDR, Reverse Drain Current [A]
RDS(ON) [Ω],
Drain-Source On-Resistance
2.0
1.5
VGS = 10V
1.0
VGS = 20V
0.5
1
10
0
10
150°C
* Notes :
1. VGS = 0V
25°C
2. 250µs Pulse Test
* Note : TJ = 25°C
0.0
-1
0
5
10
15
20
25
30
10
35
0.2
0.4
ID, Drain Current [A]
0.6
0.8
1.0
1.2
1.4
VSD, Source-Drain voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
3000
Ciss = Cgs + Cgd (Cds = shorted)
12
Coss = Cds + Cgd
Crss = Cgd
2500
VGS, Gate-Source Voltage [V]
Capacitance [pF]
2000
Coss
1500
VDS = 120V
10
Ciss
* Notes ;
1. VGS = 0 V
1000
Crss
2. f = 1 MHz
500
VDS = 300V
VDS = 480V
8
6
4
2
* Note : ID = 9.0A
0
-1
10
0
0
10
1
0
10
20
30
40
50
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
3
FQP10N60CF / FQPF10N60CF Rev. A
10
www.fairchildsemi.com
FQP10N60CF / FQPF10N60CF 600V N-Channel MOSFET
Typical Performance Characteristics
FQP10N60CF / FQPF10N60CF 600V N-Channel MOSFET
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
3.0
RDS(ON), (Normalized)
Drain-Source On-Resistance
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
1.2
1.1
1.0
* Notes :
1. VGS = 0 V
0.9
2. ID = 250µA
0.8
-100
-50
0
50
100
150
2.5
2.0
1.5
1.0
0.0
-100
200
* Notes :
1. VGS = 10 V
2. ID = 4.5 A
0.5
-50
0
50
100
150
Figure 9-1. Maximum Safe Operating Area
for FQP10N60C
Figure 9-2. Maximum Safe Operating Area
for FQPF10N60C
2
2
10
10
10 µs
10 µs
100 µs
1
1
10
ID, Drain Current [A]
ID, Drain Current [A]
100 µs
1ms
10ms
10
100ms
DC
0
10
Operation in This Area
is Limited by R DS(on)
-1
10
* Notes :
o
1. TC = 25 C
1ms
10ms
100ms
0
10
Operation in This Area
is Limited by R DS(on)
-1
10
o
2. TJ = 150 C
3. Single Pulse
2. TJ = 150 C
3. Single Pulse
-2
10
DC
* Notes :
o
1. TC = 25 C
o
10
200
TJ, Junction Temperature [°C]
TJ, Junction Temperature [°C]
-2
0
10
1
2
10
10
10
3
10
VDS, Drain-SourceVoltage[V]
0
10
1
2
10
10
3
VDS, Drain-SourceVoltage[V]
Figure 10. Maximum Drain Current
vs. Case Temperature
10
ID, Drain Current [A]
8
6
4
2
0
25
50
75
100
125
150
o
TC, Case Temperature [ C]
4
FQP10N60CF / FQPF10N60CF Rev. A
www.fairchildsemi.com
FQP10N60CF / FQPF10N60CF 600V N-Channel MOSFET
Typical Performance Characteristics (Continued)
Figure 11-1. Transient Thermal Response Curve for FQP10N60CF
0
10
Z? JC(t), Thermal Response
D=0.5
0.2
-1
10
0.1
PDM
0.05
t1
0.02
0.01
t2
* Notes :
0
1. Z? JC(t) = 0.74 C/W
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * Z? JC(t)
-2
10
single pulse
-5
-4
10
10
-3
10
-2
10
-1
0
10
10
1
10
t1, Square Wave Pulse Duration [sec]
Figure 11-2. Transient Thermal Response Curve for FQPF10N60CF
D=0.5
0
Z? JC(t), Thermal Response
10
0.2
0.1
0.05
-1
PDM
10
0.02
t1
t2
0.01
* Notes :
0
1. Z? JC(t) = 2.5 C/W
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * Z? JC(t)
-2
10
single pulse
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
t1, Square Wave Pulse Duration [sec]
5
FQP10N60CF / FQPF10N60CF Rev. A
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FQP10N60CF / FQPF10N60CF 600V N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
6
FQP10N60CF / FQPF10N60CF Rev. A
www.fairchildsemi.com
FQP10N60CF / FQPF10N60CF 600V N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
7
FQP10N60CF / FQPF10N60CF Rev. A
www.fairchildsemi.com
TO-220
4.50 ±0.20
2.80 ±0.10
(3.00)
+0.10
1.30 –0.05
18.95MAX.
(3.70)
ø3.60 ±0.10
15.90 ±0.20
1.30 ±0.10
(8.70)
(1.46)
9.20 ±0.20
(1.70)
9.90 ±0.20
(45°
1.52 ±0.10
10.08 ±0.30
(1.00)
13.08 ±0.20
)
1.27 ±0.10
0.80 ±0.10
2.54TYP
[2.54 ±0.20]
+0.10
0.50 –0.05
2.40 ±0.20
2.54TYP
[2.54 ±0.20]
10.00 ±0.20
Dimensions in Millimeters
8
FQP10N60CF / FQPF10N60CF Rev. A
www.fairchildsemi.com
FQP10N60CF / FQPF10N60CF 600V N-Channel MOSFET
Mechanical Dimensions
(Continued)
3.30 ±0.10
TO-220F
10.16 ±0.20
2.54 ±0.20
ø3.18 ±0.10
(7.00)
(1.00x45°)
15.87 ±0.20
15.80 ±0.20
6.68 ±0.20
(0.70)
0.80 ±0.10
0°
(3
9.75 ±0.30
MAX1.47
)
#1
+0.10
0.50 –0.05
2.54TYP
[2.54 ±0.20]
2.76 ±0.20
2.54TYP
[2.54 ±0.20]
9.40 ±0.20
4.70 ±0.20
0.35 ±0.10
Dimensions in Millimeters
9
FQP10N60CF / FQPF10N60CF Rev. A
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FQP10N60CF / FQPF10N60CF 600V N-Channel MOSFET
Mechanical Dimensions
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Definition of Terms
Datasheet Identification
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Definition
Advance Information
Formative or In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
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changes at any time without notice in order to improve
design.
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that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I22
10
FQP10N60CF / FQPF10N60CF Rev. A
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FQP10N60CF / FQPF10N60CF 600V N-Channel MOSFET
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