FQPF5N60 FQPF5N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 2.8A, 600V, RDS(on) = 2.0Ω @VGS = 10 V transistors are produced using Corise Semiconductorÿs proprietary, • Low gate charge ( typical 16 nC) planar stripe, DMOS technology. • Low Crss ( typical 9.0 pF) • Fast switching This advanced technology has been especially tailored to • 100% avalanche tested minimize on-state resistance, provide superior switching • Improved dv/dt capability performance, and withstand high energy pulse in the • TO-220F package isolation = 4.0kV (Note 6) avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply. D ! " ! " " " G! TO-220F GD S Absolute Maximum Ratings Symbol VDSS ID ! FQPF Series S TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) FQPF5N60 600 Units V 2.8 A 1.77 A 11.2 A IDM Drain Current VGSS Gate-Source Voltage ± 30 V EAS Single Pulsed Avalanche Energy (Note 2) 300 mJ IAR Avalanche Current (Note 1) 2.8 A EAR Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) (Note 1) 4.0 4.5 40 0.32 -55 to +150 mJ V/ns W W/°C °C 300 °C dv/dt PD TJ, TSTG TL - Pulsed (Note 1) (Note 3) - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds Thermal Characteristics Symbol RθJC Parameter Thermal Resistance, Junction-to-Case RθJA Thermal Resistance, Junction-to-Ambient Typ -- Max 3.13 Units °C/W -- 62.5 °C/W Parameter Test Conditions Min Typ Max Units 600 -- -- V -- V/°C Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA ∆BVDSS / ∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 0.6 VDS = 600 V, VGS = 0 V -- -- 10 µA VDS = 480 V, TC = 125°C -- -- 100 µA Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA 3.0 -- 5.0 V -- 1.57 2.0 Ω -- 3.5 -- S -- 560 730 pF -- 80 100 pF -- 9 12 pF -- 13 35 ns -- 45 100 ns -- 35 80 ns -- 40 90 ns -- 16 20 nC IDSS IGSSF IGSSR Zero Gate Voltage Drain Current On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 1.4 A gFS Forward Transconductance VDS = 50 V, ID = 1.4 A (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 300 V, ID = 5.0 A, RG = 25 Ω (Note 4, 5) VDS = 480 V, ID = 5.0 A, VGS = 10 V (Note 4, 5) -- 3.5 -- nC -- 7.8 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 2.8 A ISM -- -- 11.2 A VSD Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 2.8 A Drain-Source Diode Forward Voltage -- -- 1.4 V trr Reverse Recovery Time -- 270 -- ns Qrr Reverse Recovery Charge -- 1.9 -- µC VGS = 0 V, IS = 5.0 A, dIF / dt = 100 A/µs Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 70mH, IAS = 2.8A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 5.0A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature 6. Only for back side in Viso = 4.0kV and t = 0.3s (Note 4) FQPF5N60 Symbol 1 Bottom : 10 VGS 15 V 10 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V ID , Drain Current [A] Top : ID , Drain Current [A] FQPF5N60 1 10 0 10 150℃ 0 10 25℃ -55℃ ※ Notes : 1. VDS = 50V 2. 250μ s Pulse Test ※ Notes : 1. 250μ s Pulse Test 2. TC = 25℃ -1 10 -1 -1 0 10 10 1 10 2 10 4 Figure 1. On-Region Characteristics 8 1 10 IDR , Reverse Drain Current [A] VGS = 10V 4 VGS = 20V 3 2 1 0 10 25℃ 150℃ ※ Notes : 1. VGS = 0V 2. 250μ s Pulse Test ※ Note : TJ = 25℃ 0 -1 0 2 4 6 8 10 12 14 10 0.2 0.4 0.6 0.8 1.0 1.2 1.4 ID, Drain Current [A] VSD , Source-Drain Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 1200 12 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd VDS = 120V 10 800 Ciss 600 Coss ※ Notes : 1. VGS = 0 V 2. f = 1 MHz 400 Crss 200 VGS , Gate-Source Voltage [V] 1000 Capacitance [pF] 10 Figure 2. Transfer Characteristics 5 RDS(ON) [Ω ], Drain-Source On-Resistance 6 VGS , Gate-Source Voltage [V] VDS , Drain-Source Voltage [V] VDS = 300V VDS = 480V 8 6 4 2 ※ Note : ID = 5.0 A 0 -1 10 0 0 10 1 10 VDS, Drain-Source Voltage [V] Figure 5. Capacitance Characteristics 0 3 6 9 12 15 18 QG, Total Gate Charge [nC] Figure 6. Gate Charge Characteristics FQPF5N60 3.0 1.2 RDS(ON) , (Normalized) Drain-Source On-Resistance BV DSS , (Normalized) Drain-Source Breakdown Voltage 2.5 1.1 1.0 ※ Notes : 1. VGS = 0 V 2. ID = 250 μ A 0.9 0.8 -100 -50 0 50 100 2.0 1.5 1.0 ※ Notes : 1. VGS = 10 V 2. ID = 2.5 A 0.5 150 0.0 -100 200 -50 0 50 100 150 200 o o TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 Operation in This Area is Limited by R DS(on) 2.5 1 10 ID, Drain Current [A] 100 µs 100 ms 0 10 DC -1 10 2.0 1.5 1.0 ※ Notes : o 0.5 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse -2 10 0 1 10 2 10 0.0 25 3 10 10 50 Figure 9. Maximum Safe Operating Area 100 125 Figure 10. Maximum Drain Current vs. Case Temperature D = 0 .5 10 0 0 .2 ※ N o te s : 1 . Z θ J C ( t) = 3 .1 3 ℃ /W M a x . 2 . D u ty F a c to r , D = t 1 /t 2 3 . T J M - T C = P D M * Z θ J C ( t) 0 .1 0 .0 5 10 -1 0 .0 2 PDM 0 .0 1 θ JC ( t) , T h e r m a l R e s p o n s e 75 TC, Case Temperature [℃] VDS, Drain-Source Voltage [V] t1 t2 Z ID, Drain Current [A] 1 ms 10 ms s i n g l e p u ls e 10 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ] Figure 11. Transient Thermal Response Curve 10 1 150 FQPF5N60 VGS Same Type as DUT 50KΩ Qg 200nF 12V 10V 300nF VDS VGS Qgs Qgd DUT 3mA Charge Resistive Switching Test Circuit & Waveforms VDS RL VDS 90% VDD VGS RG VGS DUT 10V 10% tr td(on) td(off) t on tf t off Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L VDS BVDSS IAS ID RG VDD DUT 10V tp ID (t) VDS (t) VDD tp Time FQPF5N60 DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD Body Diode Forward Voltage Drop VDD FQPF5N60 3.30 ±0.10 TO-220F 10.16 ±0.20 2.54 ±0.20 ø3.18 ±0.10 (7.00) (1.00x45°) 15.87 ±0.20 15.80 ±0.20 6.68 ±0.20 (0.70) 0.80 ±0.10 ) 0° (3 0.35 ±0.10 #1 +0.10 0.50 –0.05 2.54TYP [2.54 ±0.20] 2.54TYP [2.54 ±0.20] 9.40 ±0.20 4.70 ±0.20 9.75 ±0.30 MAX1.47 2.76 ±0.20