Fairchild FQU11P06 60v p-channel mosfet Datasheet

QFET
®
FQD11P06 / FQU11P06
60V P-Channel MOSFET
General Description
Features
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand a high energy pulse in the
avalanche and commutation modes. These devices are
well suited for low voltage applications such as automotive,
DC/DC converters, and high efficiency switching for power
management in portable and battery operated products.
•
•
•
•
•
•
-9.4A, -60V, RDS(on) = 0.185Ω @VGS = -10 V
Low gate charge ( typical 13 nC)
Low Crss ( typical 45 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
• RoHS Compliant
S
!
D
●
●
G!
▶ ▲
G
S
●
I-PAK
D-PAK
FQD Series
FQU Series
G D S
!
D
Absolute Maximum Ratings
Symbol
VDSS
ID
TC = 25°C unless otherwise noted
Parameter
Drain-Source Voltage
- Continuous (TC = 25°C)
Drain Current
FQD11P06 / FQU11P06
-60
- Continuous (TC = 100°C)
IDM
Drain Current
VGSS
Gate-Source Voltage
EAS
Single Pulsed Avalanche Energy
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TA = 25°C) *
dv/dt
PD
- Pulsed
TL
-9.4
A
-5.95
A
-37.6
A
± 30
V
(Note 2)
160
mJ
(Note 1)
-9.4
A
(Note 1)
3.8
-7.0
2.5
mJ
V/ns
W
38
0.3
-55 to +150
W
W/°C
°C
300
°C
(Note 1)
(Note 3)
Power Dissipation (TC = 25°C)
TJ, TSTG
Units
V
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
RθJC
Parameter
Thermal Resistance, Junction-to-Case
Typ
--
Max
3.28
Units
°C/W
RθJA
RθJA
Thermal Resistance, Junction-to-Ambient *
--
50
°C/W
Thermal Resistance, Junction-to-Ambient
--
110
°C/W
* When mounted on the minimum pad size recommended (PCB Mount)
©2009 Fairchild Semiconductor Corporation
Rev. C6. January 2009
FQD11P06 / FQU11P06
January 2009
Symbol
TC = 25°C unless otherwise noted
Parameter
Test Conditions
Min
Typ
Max
Units
-60
--
--
V
--
-0.07
--
V/°C
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = -250 µA
∆BVDSS
/
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = -250 µA, Referenced to 25°C
IDSS
IGSSF
IGSSR
VDS = -60 V, VGS = 0 V
--
--
-1
µA
VDS = -48 V, TC = 125°C
--
--
-10
µA
Gate-Body Leakage Current, Forward
VGS = -25 V, VDS = 0 V
--
--
-100
nA
Gate-Body Leakage Current, Reverse
VGS = 25 V, VDS = 0 V
--
--
100
nA
Zero Gate Voltage Drain Current
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = -250 µA
-2.0
--
-4.0
V
RDS(on)
Static Drain-Source
On-Resistance
VGS = -10 V, ID = -4.7 A
--
0.15
0.185
Ω
gFS
Forward Transconductance
VDS = -30 V, ID = -4.7 A
--
4.9
--
S
--
420
550
pF
--
195
250
pF
--
45
60
pF
--
6.5
25
ns
--
40
90
ns
--
15
40
ns
--
45
100
ns
--
13
17
nC
(Note 4)
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = -25 V, VGS = 0 V,
f = 1.0 MHz
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = -30 V, ID = -5.7 A,
RG = 25 Ω
(Note 4, 5)
VDS = -48 V, ID = -11.4 A,
VGS = -10 V
(Note 4, 5)
--
2.0
--
nC
--
6.3
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
-9.4
A
ISM
--
--
-37.6
A
VSD
Maximum Pulsed Drain-Source Diode Forward Current
VGS = 0 V, IS = -9.4 A
Drain-Source Diode Forward Voltage
--
--
-4.0
V
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = -11.4 A,
dIF / dt = 100 A/µs
(Note 4)
--
83
--
ns
--
0.26
--
µC
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 2.1mH, IAS = -9.4A, VDD = -25V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ -11.4A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
©2009 Fairchild Semiconductor Corporation
Rev. C6,January 2009
FQD11P06 / FQU11P06
Elerical Characteristics
FQD11P06 / FQU11P06
Typical Characteristics
VGS
- 15.0 V
- 10.0 V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
Bottom : - 4.5 V
Top :
-ID, Drain Current [A]
1
10
-ID , Drain Current [A]
1
10
0
10
※ Notes :
1. 250µ s Pulse Test
2. TC = 25℃
-1
10
150℃
0
10
25℃
-55℃
※ Notes :
1. VDS = -30V
2. 250µ s Pulse Test
-1
-1
0
10
10
1
10
2
10
4
6
8
10
-VGS , Gate-Source Voltage [V]
-VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
-IDR , Reverse Drain Current [A]
0.6
VGS = - 10V
0.4
VGS = - 20V
0.2
※ Note : TJ = 25℃
0.0
10
0
10
※ Notes :
1. VGS = 0V
2. 250µ s Pulse Test
25℃
150℃
20
30
40
10
50
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
-ID , Drain Current [A]
-VSD , Source-Drain Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
1200
12
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
1000
Capacitance [pF]
1
10
-1
0
800
Coss
Ciss
※ Notes :
1. VGS = 0 V
2. f = 1 MHz
600
400
Crss
200
0
-1
10
0
10
1
10
-VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
©2009 Fairchild Semiconductor Corporation
-VGS, Gate-Source Voltage [V]
RDS(on) [Ω],
Drain-Source On-Resistance
0.8
10
VDS = -30V
8
VDS = -48V
6
4
2
※ Note : ID = -11.4 A
0
0
2
4
6
8
10
12
14
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Rev. C6, January 2009
(Continued)
2.5
RDS(ON), (Normalized)
Drain-Source On-Resistance
1.2
-BVDSS, (Normalized)
Drain-Source Breakdown Voltage
FQD11P06 / FQU11P06
Typical Characteristics
1.1
1.0
※ Notes :
1. VGS = 0 V
2. ID = -250 µ A
0.9
0.8
-100
-50
0
50
100
150
2.0
1.5
1.0
※ Notes :
1. VGS = -10 V
2. ID = -4.7 A
0.5
0.0
-100
200
-50
o
0
50
100
150
200
o
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
10
2
Operation in This Area
is Limited by R DS(on)
10
-ID, Drain Current [A]
-ID, Drain Current [A]
8
100 µs
1 ms
1
10
10 ms
DC
0
10
※ Notes :
6
4
2
o
1. TC = 25 C
o
2. TJ = 150 C
3. Single Pulse
-1
10
0
1
10
0
25
2
10
10
50
Figure 9. Maximum Safe Operating Area
Zθ JC(t), Thermal Response
75
100
125
150
TC, Case Temperature [℃]
-VDS, Drain-Source Voltage [V]
Figure 10. Maximum Drain Current
vs. Case Temperature
D = 0 .5
10
0
0 .2
※ N o te s :
1 . Z θ J C ( t ) = 3 .2 8 ℃ /W M a x .
2 . D u ty F a c to r , D = t 1 /t 2
3 . T J M - T C = P D M * Z θ J C ( t)
0 .1
0 .0 5
10
0 .0 2
-1
PDM
0 .0 1
t1
s in g le p u ls e
10
t2
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
Figure 11. Transient Thermal Response Curve
©2008 Fairchild Semiconductor Corporation
Rev. C5, October 2008
FQD11P06 / FQU11P06
Gate Charge Test Circuit & Waveform
VGS
Same Type
as DUT
50KΩ
200nF
12V
Qg
-10V
300nF
VDS
VGS
Qgs
Qgd
DUT
-3mA
Charge
Resistive Switching Test Circuit & Waveforms
VDS
RG
RL
t on
VDD
VGS
td(on)
VGS
t off
tr
td(off)
tf
10%
DUT
-10V
VDS
90%
Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
1
EAS = ---- L IAS2 -------------------2
BVDSS - VDD
L
VDS
tp
ID
RG
VDD
DUT
-10V
tp
©2009 Fairchild Semiconductor Corporation
VDD
Time
VDS (t)
ID (t)
IAS
BVDSS
Rev. C6, January 2009
(Continued)
2.5
RDS(ON), (Normalized)
Drain-Source On-Resistance
1.2
-BVDSS, (Normalized)
Drain-Source Breakdown Voltage
FQD11P06 / FQU11P06
Typical Characteristics
1.1
1.0
※ Notes :
1. VGS = 0 V
2. ID = -250 µ A
0.9
0.8
-100
-50
0
50
100
150
2.0
1.5
1.0
※ Notes :
1. VGS = -10 V
2. ID = -4.7 A
0.5
0.0
-100
200
-50
o
0
50
100
150
200
o
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
10
2
Operation in This Area
is Limited by R DS(on)
10
-ID, Drain Current [A]
-ID, Drain Current [A]
8
100 µs
1 ms
1
10
10 ms
DC
0
10
※ Notes :
6
4
2
o
1. TC = 25 C
o
2. TJ = 150 C
3. Single Pulse
-1
10
0
1
10
0
25
2
10
10
50
Figure 9. Maximum Safe Operating Area
Zθ JC(t), Thermal Response
75
100
125
150
TC, Case Temperature [℃]
-VDS, Drain-Source Voltage [V]
Figure 10. Maximum Drain Current
vs. Case Temperature
D = 0 .5
10
0
0 .2
※ N o te s :
1 . Z θ J C ( t ) = 3 .2 8 ℃ /W M a x .
2 . D u ty F a c to r , D = t 1 /t 2
3 . T J M - T C = P D M * Z θ J C ( t)
0 .1
0 .0 5
10
0 .0 2
-1
PDM
0 .0 1
t1
s in g le p u ls e
10
t2
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
Figure 11. Transient Thermal Response Curve
©2009 Fairchild Semiconductor Corporation
Rev. C6, January 2009
TO-252 (DPAK) (FS PKG Code 36)
1:1
FQD11P06 / FQU11P06
Mechanical Dimensions
Scale 1:1 on letter size paper
Dimensions shown below are in:
millimeters
Part Weight per unit (gram): 0.33
©2009 Fairchild Semiconductor Corporation
Rev. C6, January 2009
FQD11P06 / FQU11P06
Mechanical Dimensions
I - PAK
Dimensions in Millimeters
©2009 Fairchild Semiconductor Corporation
Rev. C6. January 2009
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Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
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Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
.
Rev. I37
©2009 Fairchild Semiconductor Corporation
Rev. C6. January 2009
FQD11P06 / FQU11P06
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