Fairchild FQU13N10 N-channel qfet mosfet Datasheet

FQD13N10 / FQU13N10
N-Channel QFET MOSFET
100 V, 10 A, 180 mΩ
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor®’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to reduce
on-state resistance, and to provide superior switching
performance and high avalanche energy strength. These
devices are suitable for switched mode power supplies,
audio amplifier, DC motor control, and variable switching
power applications.
Features
• 10 A, 100 V, RDS(on) = 180 mΩ (Max) @VGS = 10
V, ID = 5.0 A
• Low Gate Charge (Typ. 12 nC)
• Low Crss (Typ. 20 pF)
• 100% Avalanche Tested
D
!
D
"
! "
"
"
G!
G
S
I-PAK
D-PAK
FQD Series
G D S
FQU Series
!
S
Absolute Maximum Ratings
Symbol
VDSS
ID
TC = 25°C unless otherwise noted
Parameter
Drain-Source Voltage
- Continuous (TC = 25°C)
Drain Current
FQD13N10 / FQU13N10
100
- Continuous (TC = 100°C)
Unit
V
10
A
6.3
A
40
A
IDM
Drain Current
VGSS
Gate-Source Voltage
EAS
Single Pulsed Avalanche Energy
(Note 2)
IAR
Avalanche Current
(Note 1)
10
A
EAR
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TA = 25°C) *
(Note 1)
4.0
6.0
2.5
mJ
V/ns
W
40
0.32
-55 to +150
W
W/°C
°C
300
°C
dv/dt
PD
- Pulsed
(Note 1)
(Note 3)
Power Dissipation (TC = 25°C)
TJ, TSTG
TL
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
± 25
V
95
mJ
Thermal Characteristics
Typ
--
Max
3.13
Unit
°C/W
Thermal Resistance, Junction-to-Ambient *
--
50
°C/W
Thermal Resistance, Junction-to-Ambient
--
110
°C/W
Symbol
RθJC
Parameter
Thermal Resistance, Junction-to-Case
RθJA
RθJA
* When mounted on the minimum pad size recommended (PCB Mount)
©2000 Fairchild Semiconductor Corporation
FQD13N10 / FQU13N10 Rev. C0
www.fairchildsemi.com
FQD13N10 / FQU13N10 N-Channel MOSFET
March 2013
Symbol
TC = 25°C unless otherwise noted
Parameter
Test Conditions
Min
Typ
Max
Unit
100
--
--
V
--
0.09
--
V/°C
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
∆BVDSS
/
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250 µA, Referenced to 25°C
IDSS
IGSSF
IGSSR
VDS = 100 V, VGS = 0 V
--
--
1
µA
VDS = 80 V, TC = 125°C
--
--
10
µA
Gate-Body Leakage Current, Forward
VGS = 25 V, VDS = 0 V
--
--
100
nA
Gate-Body Leakage Current, Reverse
VGS = -25 V, VDS = 0 V
--
--
-100
nA
2.0
--
4.0
V
--
0.142
0.18
Ω
--
6.3
--
S
Zero Gate Voltage Drain Current
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 5.0 A
gFS
Forward Transconductance
VDS = 40 V, ID = 5.0 A
(Note 4)
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
--
345
450
pF
--
100
130
pF
--
20
25
pF
ns
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 50 V, ID = 12.8 A,
RG = 25 Ω
(Note 4, 5)
VDS = 80 V, ID = 12.8 A,
VGS = 10 V
(Note 4, 5)
--
5
20
--
55
120
ns
--
20
50
ns
--
25
60
ns
--
12
16
nC
--
2.5
--
nC
--
5.1
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
10
A
ISM
--
--
40
A
VSD
Maximum Pulsed Drain-Source Diode Forward Current
VGS = 0 V, IS = 10 A
Drain-Source Diode Forward Voltage
--
--
1.5
V
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 12.8 A,
dIF / dt = 100 A/µs
(Note 4)
--
72
--
ns
--
0.17
--
µC
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 1.43mH, IAS = 10A, VDD = 25V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 12.8A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
©2000 Fairchild Semiconductor Corporation
FQD13N10 / FQU13N10 Rev. C0
www.fairchildsemi.com
FQD13N10 / FQU13N10 N-Channel MOSFET
Electrical Characteristics
VGS
15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
Top :
ID, Drain Current [A]
1
10
ID , Drain Current [A]
1
10
0
10
150℃
0
10
25℃
-55℃
※ Notes :
1. VDS = 40V
2. 250μs Pulse Test
※ Notes :
1. 250μs Pulse Test
2. TC = 25℃
-1
10
-1
10
-1
0
10
2
1
10
10
4
6
8
10
VGS , Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
0.8
1
10
VGS = 10V
IDR , Reverse Drain Current [A]
RDS(ON) [Ω ],
Drain-Source On-Resistance
0.6
VGS = 20V
0.4
0.2
0
10
150℃
-1
0.0
0
10
20
30
40
10
0.2
0.4
0.6
ID, Drain Current [A]
0.8
1.0
1.2
1.4
1.6
1.8
VSD, Source-Drain voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
900
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
600
Ciss
450
Coss
300
※ Notes :
1. VGS = 0 V
2. f = 1 MHz
Crss
150
VDS = 50V
10
VGS, Gate-Source Voltage [V]
750
Capacitance [pF]
※ Notes :
1. VGS = 0V
2. 250μs Pulse Test
25℃
※ Note : TJ = 25℃
VDS = 80V
8
6
4
2
※ Note : ID = 12.8A
0
-1
10
0
0
10
1
10
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
©2000 Fairchild Semiconductor Corporation
FQD13N10 / FQU13N10 Rev. C0
0
2
4
6
8
10
12
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
www.fairchildsemi.com
FQD13N10 / FQU13N10 N-Channel MOSFET
Typical Characteristics
(Continued)
2.5
2.0
1.1
RDS(ON) , (Normalized)
Drain-Source On-Resistance
BV DSS , (Normalized)
Drain-Source Breakdown Voltage
1.2
1.0
※ Notes :
1. VGS = 0 V
2. ID = 250 μA
0.9
0.8
-100
-50
0
50
100
150
1.5
1.0
0.5
※ Notes :
1. VGS = 10 V
2. ID = 5.0 A
0.0
-100
200
-50
0
o
50
100
150
200
o
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
10
Operation in This Area
is Limited by R DS(on)
2
8
100 µs
ID, Drain Current [A]
ID, Drain Current [A]
10
1 ms
1
10
10 ms
DC
0
10
※ Notes :
6
4
2
o
1. TC = 25 C
o
2. TJ = 150 C
3. Single Pulse
-1
10
0
1
10
0
25
2
10
10
50
( t) , T h e r m a l R e s p o n s e
Figure 9. Maximum Safe Operating Area
100
125
150
Figure 10. Maximum Drain Current
vs. Case Temperature
D = 0 .5
10
0
※ N o te s :
1 . Z θ J C ( t) = 3 .1 3 ℃ / W M a x .
2 . D u ty F a c to r , D = t 1 /t 2
3 . T J M - T C = P D M * Z θ J C ( t)
0 .2
0 .1
0 .0 5
10
PDM
0 .0 2
-1
0 .0 1
t1
s i n g le p u ls e
Z
θ JC
75
TC, Case Temperature [℃]
VDS, Drain-Source Voltage [V]
10
-5
10
-4
t2
10
-3
10
-2
10
-1
10
0
10
1
t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
Figure 11. Transient Thermal Response Curve
©2000 Fairchild Semiconductor Corporation
FQD13N10 / FQU13N10 Rev. C0
www.fairchildsemi.com
FQD13N10 / FQU13N10 N-Channel MOSFET
Typical Characteristics
FQD13N10 / FQU13N10 N-Channel MOSFET
Gate Charge Test Circuit & Waveform
VGS
Same Type
as DUT
50KΩ
Qg
200nF
12V
10V
300nF
VDS
VGS
Qgs
Qgd
DUT
3mA
Charge
Resistive Switching Test Circuit & Waveforms
VDS
RL
VDS
90%
VDD
VGS
RG
VGS
DUT
10V
10%
td(on)
tr
td(off)
t on
tf
t off
Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
1
EAS = ---- L IAS2 -------------------2
BVDSS - VDD
L
VDS
BVDSS
IAS
ID
RG
VDD
DUT
10V
tp
©2000 Fairchild Semiconductor Corporation
FQD13N10 / FQU13N10 Rev. C0
ID (t)
VDS (t)
VDD
tp
Time
www.fairchildsemi.com
FQD13N10 / FQU13N10 N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
I SD
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
VSD
VDD
Body Diode
Forward Voltage Drop
©2000 Fairchild Semiconductor Corporation
FQD13N10 / FQU13N10 Rev. C0
www.fairchildsemi.com
FQD13N10 / FQU13N10 N-Channel MOSFET
Package Dimensions
TO-252 (DPAK) (FS PKG Code 36)
1:1
Scale 1:1 on letter size paper
Dimensions shown below are in:
millimeters
Part Weight per unit (gram): 0.33
©2000 Fairchild Semiconductor Corporation
FQD13N10 / FQU13N10 Rev. C0
www.fairchildsemi.com
(Continued)
IPAK
2.30 ±0.20
6.60 ±0.20
5.34 ±0.20
0.76 ±0.10
2.30TYP
[2.30±0.20]
©2000 Fairchild Semiconductor Corporation
FQD13N10 / FQU13N10 Rev. C0
16.10 ±0.30
6.10 ±0.20
0.70 ±0.20
0.50 ±0.10
9.30 ±0.30
0.80 ±0.10
MAX0.96
(0.50)
1.80 ±0.20
(4.34)
0.60 ±0.20
(0.50)
2.30TYP
[2.30±0.20]
0.50 ±0.10
www.fairchildsemi.com
FQD13N10 / FQU13N10 N-Channel MOSFET
Package Dimensions
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I64
©2000 Fairchild Semiconductor Corporation
FQD13N10 / FQU13N10 Rev. C0
www.fairchildsemi.com
FQD13N10 / FQU13N10 N-Channel MOSFET
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