FR10A thru FR10M Pb Free Plating Product Pb FR10A thru FR10M 10.0 Ampere Surface Mount Round Lead Fast Recovery Rectifier Diodes Features OUTLINE For surface mounted application Low profile package Built-in strain relief Ideal for automated placement Easy pick and place Fast recovery time for high efficiency Plastic material used carries Underwriters Laboratory Classification 94V-0 Unit:inch(millimeter) H Cathode Band J A E C D B F G DIMENSIONS Mechanical Data INCHES MIN 0.200 0.177 0.002 --0.047 0 .168 0.309 0.239 0.234 DIM A B C D E F G H J Cases: HSMC(Round Lead)/SME Pkg Terminals: Pure tin plated, lead free. Polarity: Indicated by cathode band Packing: Tape&Reel Weight: 0.093 gram approximately MAX 0.214 0.203 0.005 0.02 0.056 0 .179 0.322 0.243 0.240 MM MIN 5.08 4.70 0.05 --1.20 4.27 7.85 6.08 5.95 MAX 5.43 5.30 0.13 0.51 1.42 4.55 8.18 6.18 6.10 NOTE HSMC/SMC-W/SMCE Maximum Ratings and Electrical Characteristics Rating at 25 ℃ ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Type Number Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current See Fig. 1 Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) Maximum Instantaneous Forward Voltage @ 8.0A Maximum DC Reverse Current o @T A =25 C at Rated DC Blocking Voltage o @ T A =100 C Maximum Reverse Recovery Time ( Note 1 ) Typical Junction Capacitance ( Note 2 ) Maximum Thermal Resistance (Note 3) Operating Temperature Range Storage Temperature Range Notes: Symbol V RRM FR10A FR10B FR10D FR10G FR10J FR10K FR10M 50 100 200 400 © 2006 Thinki Semiconductor Co., Ltd. 800 1000 V V RMS 35 70 140 280 420 560 700 V V DC 50 100 200 400 600 800 1000 V I(AV) 10.0 A I FSM 300 A VF 1.3 V IR 10 50 uA uA Trr Cj R θJA R θJL TJ 150 45 250 30 75 20 -55 to +150 -55 to +150 T STG 1. Reverse Recovery Test Conditions: IF =0.5A, IR =1.0A, IRR =0.25A 2. Measured at 1 MHz and Applied V R =4.0 Volts 3. Units Mounted on P.C.B. 0.4” x 0.4” (10mm x 10mm) Pad Areas Rev.07C 600 Units 500 nS pF ℃／Ｗ ℃ ℃ Page 1/2 http://www.thinkisemi.com/ FR10A thru FR10M FIG.1- MAXIMUM FORWARD CURRENT DERATING CURVE FIG.2- TYPICAL REVERSE CHARACTERISTICS 1000 10.0 INSTANTANEOUS REVERSE CURRENT. ( A) AVERAGE FORWARD CURRENT. (A) RESISTIVE OR INDUCTIVE LOAD 0.4X0.4"(10X10mm) COPPER PAD AREAS 8.0 4.0 0 55 150 o LEAD TEMPERATURE. ( C) FIG.3- MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 100 Tj=1250C 10 Tj=850C 1 Tj=25 0C 0.1 PEAK FORWARD SURGE CURRENT. (A) 300 8.3ms Single Half Sine Wave o (JEDEC Method) at TL=120 C 0.01 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE. (%) 150 60 FIG.5- TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 0 Tj=25 C PULSE WIDTH-300 S 1% DUTY CYCLE 0 INSTANTANEOUS FORWARD CURRENT. (A) 100 10 1 NUMBER OF CYCLES AT 60Hz FIG.4- TYPICAL JUNCTION CAPACITANCE JUNCTION CAPACITANCE.(pF) 60 Tj=25 0C f=1.0MHz Vsig=50mVp-p 50 40 30 20 10 1 0.1 10 0 0 1 100 10 0.01 0.4 0.6 0.8 REVERSE VOLTAGE. (V) 1.0 1.2 1.4 1.6 1.8 FORWARD VOLTAGE. (V) FIG.6- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM 50W NONINDUCTIVE 10W NONINDUCTIVE trr +0.5A (-) DUT (+) 50Vdc (approx) (-) PULSE GENERATOR (NOTE 2) 1W NON INDUCTIVE OSCILLOSCOPE (NOTE 1) NOTES: 1. Rise Time=7ns max. Input Impedance= 1 megohm 22pf 2. Rise Time=10ns max. Sourse Impedance= 50 ohms Rev.07C © 2006 Thinki Semiconductor Co., Ltd. 0 -0.25A (+) -1.0A 1cm SET TIME BASE FOR 5/ 10ns/ cm Page 2/2 http://www.thinkisemi.com/