Intersil FRS140H 17a, 100v, 0.145 ohm, rad hard, n-channel power mosfet Datasheet

FRS140D, FRS140R,
FRS140H
17A, 100V, 0.145 Ohm, Rad Hard,
N-Channel Power MOSFETs
June 1998
Features
Package
• 17A, 100V, RDS(on) = 0.145Ω
TO-257AA
• Second Generation Rad Hard MOSFET Results From New Design Concepts
• Gamma
• Gamma Dot
• Photo Current
• Neutron
-
Meets Pre-Rad Specifications to 100KRAD(Si)
Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)
Performance Permits Limited Use to 3000KRAD(Si)
Survives 3E9RAD(Si)/sec at 80% BVDSS Typically
Survives 2E12 Typically If Current Limited to IDM
3.0nA Per-RAD(Si)/sec Typically
Pre-RAD Specifications for 3E13 Neutrons/cm2
Usable to 3E14 Neutrons/cm2
Description
The Intersil Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types with ratings
from 100V to 500V, 1A to 60A, and on resistance as low as 25mW. Total dose
hardness is offered at 100K RAD(Si) and 1000KRAD(Si) with neutron hardness
ranging from 1E13n/cm2 for 500V product to 1E14n/cm2 for 100V product. Dose
rate hardness (GAMMA DOT) exists for rates to 1E9 without current limiting and
2E12 with current limiting.
CAUTION: Beryllia Warning per MIL-S-19500
refer to package specifications.
Symbol
This MOSFET is an enhancement-mode silicon-gate power field effect transistor
of the vertical DMOS (VDMOS) structure. It is specially designed and processed
to exhibit minimal characteristic changes to total dose (GAMMA) and neutron (no)
exposures. Design and processing efforts are also directed to enhance survival to
heavy ion (SEU) and/or dose rate (GAMMA DOT) exposure.
This part may be supplied as a die or in various packages other than shown
above. Reliability screening is available as either non TX (commercial), TX
equivalent of MIL-S-19500, TXV equivalent of MIL-S-19500, or space equivalent of MIL-S-19500. Contact the Intersil High-Reliability Marketing group for
any desired deviations from the data sheet.
Absolute Maximum Ratings
(TC = +25oC) Unless Otherwise Specified
Drain-Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS
Drain-Gate Voltage (RGS = 20kΩ). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Continuous Drain Current
TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
TC = +100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS
Maximum Power Dissipation
TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT
TC = +100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT
Derated Above +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Inductive Current, Clamped, L = 100µH, (See Test Figure). . . . . . . . . . . . . . . . . . . . . . . . . . ILM
Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IS
Pulsed Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM
Operating And Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJC, TSTG
Lead Temperature (During Soldering)
Distance > 0.063 in. (1.6mm) From Case, 10s Max. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
4-1
FRS140D, R, H
100
100
UNITS
V
V
17
11
51
±20
A
A
A
V
75
30
0.60
51
17
51
-55 to +150
W
W
W/oC
A
A
A
oC
300
oC
File Number
3254.2
FRS140D, FRS140R, FRS140H
Pre-Radiation Electrical Specifications
TC = +25oC, Unless Otherwise Specified
LIMITS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
Drain-Source Breakdown Volts
BVDSS
VGS = 0, ID = 1mA
100
-
V
Gate-Threshold Volts
VGS(th)
VDS = VGS, ID = 1mA
2.0
4.0
V
Gate-Body Leakage Forward
IGSSF
VGS = +20V
-
100
nA
Gate-Body Leakage Reverse
IGSSR
VGS = -20V
-
100
nA
Zero-Gate Voltage
Drain Current
IDSS1
IDSS2
IDSS3
VDS = 100V, VGS = 0
VDS = 80V, VGS = 0
VDS = 80V, VGS = 0, TC = +125oC
-
1
0.025
0.25
mA
Time = 20µs
-
51
A
Rated Avalanche Current
IAR
Drain-Source On-State Volts
VDS(on)
VGS = 10V, ID = 17A
-
2.59
V
Drain-Source On Resistance
RDS(on)
VGS = 10V, ID = 11A
-
0.145
Ω
td(on)
VDD = 50V, ID = 17A
-
60
Pulse Width = 3µs
-
320
Period = 300µs, RG = 25Ω
-
290
0 ≤ VGS ≤ 10 (See Test Circuit)
-
260
Turn-On Delay Time
Rise Time
tr
ns
Turn-Off Delay Time
td(off)
Fall Time
tf
Gate-Charge Threshold
QG(th)
1
6
Gate-Charge On State
QG(on)
32
130
60
240
3
14
VDD = 50V, ID = 17A
IGS1 = IGS2
0 ≤ VGS≤ 20
nc
Gate-Charge Total
QGM
Plateau Voltage
VGP
Gate-Charge Source
QGS
5
22
Gate-Charge Drain
QGD
18
74
Diode Forward Voltage
VSD
0.6
1.8
V
Reverse Recovery Time
TT
I = 17A; di/dt = 100A/µs
-
800
ns
V
nc
ID = 17A, VGD = 0
Junction-To-Case
Rθjc
-
-
1.67
Junction-To-Ambient
Rθja
Free Air Operation
-
60
oC/W
ELECTRONIC SWITCH OPENS
WHEN IAS IS REACHED
VDD
VDS
L
RL
+
CURRENT I
TRANSFORMER AS
VDS
-
VGS = 12V
VARY tP TO OBTAIN
REQUIRED PEAK IAS
DUT
0V
+
50Ω
VDD
VGS ≤ 20V
-
RGS
DUT
0V
FIGURE 1. RESISTIVE SWITCHING TEST CIRCUIT
tP
50V-150V
50Ω
FIGURE 2. UNCLAMPED ENERGY TEST CIRCUIT
4-2
FRS140D, FRS140R, FRS140H
Post-Radiation Electrical Specifications
TC = +25oC, Unless Otherwise Specified
LIMITS
PARAMETER
Drain-Source
Breakdown Volts
Gate-Source
Threshold Volts
Gate-Body
Leakage Forward
Gate-Body
Leakage Reverse
Zero-Gate Voltage
Drain Current
Drain-Source
On-State Volts
Drain-Source
On Resistance
SYMBOL
TYPE
TEST CONDITIONS
MIN
MAX
UNITS
(Note 4, 6)
BVDSS
FRS140D, R
VGS = 0, ID = 1mA
100
-
V
(Note 5, 6)
BVDSS
FRS140H
VGS = 0, ID = 1mA
95
-
V
(Note 4, 6)
VGS(th)
FRS140D, R
VGS = VDS, ID = 1mA
2.0
4.0
V
(Note 3, 5, 6)
VGS(th)
FRS140H
VGS = VDS, ID = 1mA
1.5
4.5
V
(Note 4, 6)
IGSSF
FRS140D, R
VGS = 20V, VDS = 0
-
100
nA
(Note 5, 6)
IGSSF
FRS140H
VGS = 20V, VDS = 0
-
200
nA
(Note 2, 4, 6)
IGSSR
FRS140D, R
VGS = -20V, VDS = 0
-
100
nA
(Note 2, 5, 6)
IGSSR
FRS140H
VGS = -20V, VDS = 0
-
200
nA
(Note 4, 6)
IDSS
FRS140D, R
VGS = 0, VDS = 80V
-
25
µA
(Note 5, 6)
IDSS
FRS140H
VGS = 0, VDS = 80V
-
100
µA
(Note 1, 4, 6)
VDS(on)
FRS140D, R
VGS = 10V, ID = 17A
-
2.59
V
(Note 1, 5, 6)
VDS(on)
FRS140H
VGS = 16V, ID = 17A
-
3.89
V
(Note 1, 4, 6)
RDS(on)
FRS140D, R
VGS = 10V, ID =11A
-
0.145
Ω
(Note 1, 5, 6)
RDS(on)
FRS140H
VGS = 14V, ID =11A
-
0.218
Ω
NOTES:
1. Pulse test, 300µs max
2. Absolute value
3. Gamma = 300KRAD(Si)
4. Gamma = 10KRAD(Si) for “D”, 100KRAD(Si) for “R”. Neutron = 3E13
5. Gamma = 1000KRAD(Si). Neutron = 3E13
6. Insitu Gamma bias must be sampled for both VGS = +10V, VDS = 0V and VGS = 0V, VDS = 80% BVDSS
7. Gamma data taken 6/25/90 on TA 17641 devices by GE ASTRO SPACE; EMC/SURVIVABILITY LABORATORY; KING OF PRUSSIA,
PA 19401
8. Single event drain burnout testing by Titus, J.L., et al of NWSC, Crane, IN at Brookhaven Nat. Lab. Dec 11-14, 1989
9. Neutron derivation, Intersil Application note AN-8831, Oct. 1988
4-3
FRS140D, FRS140R, FRS140H
Typical Performance Characteristics
4-4
FRS140D, FRS140R, FRS140H
Rad Hard Data Packages - Intersil Power Transistors
TXV Equivalent
E. Preconditioning Attributes Data Sheet
Hi-Rel Lot Traveler
HTRB - Hi Temp Gate Stress Post Reverse
Bias Data and Delta Data
HTRB - Hi Temp Drain Stress Post Reverse
Bias Delta Data
1. Rad Hard TXV Equivalent - Standard Data Package
A. Certificate of Compliance
B. Assembly Flow Chart
C. Preconditioning - Attributes Data Sheet
- Attributes Data Sheet
F. Group A
- Attributes Data Sheet
E. Group B
- Attributes Data Sheet
G. Group B
- Attributes Data Sheet
F. Group C
- Attributes Data Sheet
H. Group C
- Attributes Data Sheet
- Attributes Data Sheet
I. Group D
- Attributes Data Sheet
D. Group A
G. Group D
2. Rad Hard TXV Equivalent - Optional Data Package
2. Rad Hard Max. “S” Equivalent - Optional Data Package
A. Certificate of Compliance
A. Certificate of Compliance
B. Assembly Flow Chart
B. Serialization Records
C. Preconditioning - Attributes Data Sheet
- Precondition Lot Traveler
- Pre and Post Burn-In Read and Record
Data
C. Assembly Flow Chart
D. Group A
- Attributes Data Sheet
- Group A Lot Traveler
E. Group B
- Attributes Data Sheet
- Group B Lot Traveler
- Pre and Post Read and Record Data for
Intermittent Operating Life (Subgroup B3)
- Bond Strength Data (Subgroup B3)
- Pre and Post High Temperature Operating
Life Read and Record Data (Subgroup B6)
F. Group C
G. Group D
D. SEM Photos and Report
E. Preconditioning - Attributes Data Sheet
- Hi-Rel Lot Traveler
- HTRB - Hi Temp Gate Stress Post
Reverse Bias Data and Delta Data
- HTRB - Hi Temp Drain Stress Post
Reverse Bias Delta Data
- X-Ray and X-Ray Report
- Attributes Data Sheet
- Group C Lot Traveler
- Pre and Post Read and Record Data for
Intermittent Operating Life (Subgroup C6)
- Bond Strength Data (Subgroup C6)
- Attributes Data Sheet
- Group D Lot Traveler
- Pre and Post RAD Read and Record Data
F. Group A
- Attributes Data Sheet
- Hi-Rel Lot Traveler
- Subgroups A2, A3, A4, A5 and A7 Data
G. Group B
- Attributes Data Sheet
- Hi-Rel Lot Traveler
- Subgroups B1, B3, B4, B5 and B6 Data
H. Group C
- Attributes Data Sheet
- Hi-Rel Lot Traveler
- Subgroups C1, C2, C3 and C6 Data
I. Group D
Class S - Equivalents
1. Rad Hard “S” Equivalent - Standard Data Package
A. Certificate of Compliance
B. Serialization Records
C. Assembly Flow Chart
D. SEM Photos and Report
4-5
- Attributes Data Sheet
- Hi-Rel Lot Traveler
- Pre and Post Radiation Data
FRS140D, FRS140R, FRS140H
TO-257AA
3 LEAD JEDEC TO-257AA HERMETIC METAL PACKAGE
A
INCHES
ØP
E
A1
SYMBOL
Q
H1
D
0.065 R TYP.
L1
Øb1
L
b
1
2
3
J1
e
e1
MIN
MAX
MILLIMETERS
MIN
MAX
NOTES
A
0.190
0.200
4.83
5.08
-
A1
0.035
0.045
0.89
1.14
-
Øb
0.025
0.035
0.64
0.88
2, 3
Øb1
0.060
0.090
1.53
2.28
-
D
0.645
0.665
16.39
16.89
-
E
0.410
0.420
10.42
10.66
-
e
0.100 TYP
2.54 TYP
4
e1
0.200 BSC
5.08 BSC
4
H1
0.230
0.250
5.85
6.35
-
J1
0.110
0.130
2.80
3.30
4
15.24
L
0.600
0.650
16.51
-
L1
-
0.035
-
0.88
-
ØP
0.140
0.150
3.56
3.81
-
Q
0.113
0.133
2.88
3.37
-
NOTES:
1. These dimensions are within allowable dimensions of Rev. B of
JEDEC TO-257AA dated 9-88.
2. Add typically 0.002 inches (0.05mm) for solder coating.
3. Lead dimension (without solder).
4. Position of lead to be measured 0.150 inches (3.81mm) from bottom
of dimension D.
5. Die to base BeO isolated, terminals to case ceramic isolated.
6. Controlling dimension: Inch.
7. Revision 1 dated 1-93.
WARNING!
BERYLLIA WARNING PER MIL-S-19500
Packages containing beryllium oxide (BeO) shall not be ground, machined, sandblasted, or subject to any mechanical
operation which will produce dust containing any beryllium compound. Packages containing any beryllium compound
shall not be subjected to any chemical process (etching, etc.) which will produce fumes containing beryllium or its’
compounds.
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate
and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
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NORTH AMERICA
Intersil Corporation
P. O. Box 883, Mail Stop 53-204
Melbourne, FL 32902
TEL: (407) 724-7000
FAX: (407) 724-7240
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TEL: (32) 2.724.2111
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4-6
ASIA
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Taiwan Limited
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Taipei, Taiwan
Republic of China
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FAX: (886) 2 2715 3029
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