Powerex Power FS10KMA-5A Nch power mosfet high-speed switching use Datasheet

MITSUBISHI Nch POWER MOSFET
ARY
FS10KMA-5A
MIN
RELI
.
ation change.
ecific
nal sp subject to
fi
a
t
o
re
is is nic limits a
e: Th
tr
Notice parame
Som
P
HIGH-SPEED SWITCHING USE
FS10KMA-5A
OUTLINE DRAWING
Dimensions in mm
3 ± 0.3
6.5 ± 0.3
2.8 ± 0.2
φ 3.2 ± 0.2
3.6 ± 0.3
14 ± 0.5
15 ± 0.3
10 ± 0.3
1.1 ± 0.2
1.1 ± 0.2
0.75 ± 0.15
➁
2.6 ± 0.2
➀ ➁ ➂
● 10V DRIVE
● VDSS ............................................................................... 250V
● rDS (ON) (MAX) ............................................................. 0.52Ω
● ID ......................................................................................... 10A
0.75 ± 0.15
2.54 ± 0.25
4.5 ± 0.2
2.54 ± 0.25
➀ GATE
➁ DRAIN
➂ SOURCE
➀
➂
TO-220FN
APPLICATION
CS Switch for CRT Display monitor
MAXIMUM RATINGS
Symbol
(Tc = 25°C)
Ratings
Unit
VDSS
Drain-source voltage
VGS = 0V
250
V
VGSS
ID
IDM
Gate-source voltage
Drain current
Drain current (Pulsed)
VDS = 0V
±20
10
30
V
A
A
IDA
PD
Tch
Tstg
Viso
Avalanche drain current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Isolation voltage
L = 200µH
10
32
–55 ~ +150
–55 ~ +150
2000
A
W
°C
°C
V
Weight
Typical value
2.0
g
—
Parameter
Conditions
AC for 1minute, Terminal to case
Sep.1998
MITSUBISHI Nch POWER MOSFET
ARY
FS10KMA-5A
MIN
RELI
.
ation change.
ecific
nal sp subject to
fi
a
t
o
re
is is nic limits a
e: Th
tr
Notice parame
Som
P
ELECTRICAL CHARACTERISTICS
HIGH-SPEED SWITCHING USE
(Tch = 25°C)
Symbol
Parameter
V (BR) DSS
Drain-source breakdown voltage
ID = 1mA, VGS = 0V
IGSS
IDSS
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
VDS = 25V, VGS = 0V, f = 1MHz
VGS (th)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Turn-off delay time
Fall time
Source-drain voltage
Rth (ch-c)
Thermal resistance
Test conditions
Limits
Unit
VGS = ±20V, VDS = 0V
VDS = 250V, VGS = 0V
Min.
250
—
—
Typ.
—
—
—
Max.
—
±10
1
ID = 1mA, VDS = 10V
ID = 5A, VGS = 10V
ID = 5A, VGS = 10V
ID = 5A, VDS = 10V
2.0
—
—
—
3.0
0.40
2.00
9.0
4.0
0.52
2.60
—
V
Ω
V
S
—
—
—
—
950
90
25
20
—
—
—
—
pF
pF
pF
ns
—
—
—
—
25
150
40
0.95
—
—
—
—
ns
ns
ns
V
—
—
3.91
°C/W
VDD = 150V, ID = 5A, VGS = 10V, RGEN = RGS = 50Ω
IS = 5A, VGS = 0V
Channel to case
V
µA
mA
Sep.1998
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