MITSUBISHI Nch POWER MOSFET FS10SM-16A HIGH-SPEED SWITCHING USE FS10SM-16A OUTLINE DRAWING Dimensions in mm 4.5 15.9MAX. 1.5 5.0 r 4 2 20.0 φ 3.2 2 19.5MIN. 4.4 1.0 q w 5.45 e 5.45 0.6 2.8 4 wr q GATE w DRAIN e SOURCE r DRAIN q ¡VDSS ................................................................................ 800V ¡rDS (ON) (MAX) .............................................................. 0.98Ω ¡ID ......................................................................................... 10A e TO-3P APPLICATION SMPS, DC-DC Converter, battery charger, power supply of printer, copier, HDD, FDD, TV, VCR, personal computer etc. MAXIMUM RATINGS Symbol VDSS VGSS ID IDM PD Tch Tstg — (Tc = 25°C) Parameter Conditions Drain-source voltage VGS = 0V Gate-source voltage Drain current Drain current (Pulsed) Maximum power dissipation Channel temperature VDS = 0V Storage temperature Weight Typical value Ratings Unit 800 ±30 V V 10 30 200 A A W –55 ~ +150 –55 ~ +150 4.8 °C °C g Feb.1999 MITSUBISHI Nch POWER MOSFET FS10SM-16A HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS (Tch = 25°C) Symbol Parameter V (BR) DSS Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakage current Drain-source leakage current ID = 1mA, VGS = 0V IGS = ±100µA, VDS = 0V VGS = ±25V, VDS = 0V VDS = 800V, VGS = 0V Gate-source threshold voltage Drain-source on-state resistance ID = 1mA, VDS = 10V ID = 5A, VGS = 10V ID = 5A, VGS = 10V ID = 5A, VDS = 10V V (BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Drain-source on-state voltage Forward transfer admittance Input capacitance Coss Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Crss td (on) tr td (off) tf VDS = 25V, VGS = 0V, f = 1MHz VDD = 200V, ID = 5A, VGS = 10V, RGEN = RGS = 50Ω Turn-off delay time Fall time Source-drain voltage VSD Rth (ch-c) Limits Test conditions IS = 5A, VGS = 0V Channel to case Thermal resistance Unit Min. Typ. Max. 800 ±30 — — — — — — ±10 V V µA — 2 — — — 3 0.76 3.80 1 4 0.98 4.90 mA V Ω V 6.0 — — — 10.0 2250 230 42 — — — — S pF pF pF — — — — 38 46 260 75 — — — — ns ns ns ns — 1.0 1.5 V — — 0.625 °C/W PERFORMANCE CURVES DRAIN CURRENT ID (A) 160 120 80 40 0 0 50 100 150 102 7 5 3 2 tw = 10ms 101 7 5 3 2 100ms 1ms 100 7 5 3 2 10ms 100ms DC TC = 25°C Single Pulse 10–1 0 10 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 200 CASE TEMPERATURE TC (°C) DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) VGS = 20V 20 DRAIN CURRENT ID (A) MAXIMUM SAFE OPERATING AREA PD = 200W 10V TC = 25°C Pulse Test TC = 25°C 16 Pulse Test 12 5V 8 VGS = 20V 10 10V 4 DRAIN CURRENT ID (A) POWER DISSIPATION PD (W) POWER DISSIPATION DERATING CURVE 200 5V 8 6 4 4.5V 2 4V 4V 0 0 4 8 12 16 20 DRAIN-SOURCE VOLTAGE VDS (V) 0 0 2 4 6 8 10 DRAIN-SOURCE VOLTAGE VDS (V) Feb.1999 MITSUBISHI Nch POWER MOSFET FS10SM-16A HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 1.0 TC = 25°C Pulse Test 40 30 20 ID = 20A 10 10A DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (Ω) DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) 50 ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) TC = 25°C Pulse Test VGS = 10V 0.8 20V 0.6 0.4 0.2 5A 0 4 8 12 DRAIN CURRENT ID (A) TRANSFER CHARACTERISTICS (TYPICAL) FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) FORWARD TRANSFER ADMITTANCE yfs (S) DRAIN CURRENT ID (A) 101 7 5 TC = 25°C VDS = 50V Pulse Test 16 12 8 4 0 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 20 GATE-SOURCE VOLTAGE VGS (V) 20 CAPACITANCE Ciss, Coss, Crss (pF) 16 TC = 25°C 75°C 125°C 3 2 100 7 5 3 2 0 4 8 12 16 10–1 –1 10 20 VDS = 10V Pulse Test 2 3 5 7 100 2 3 5 7 101 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) SWITCHING CHARACTERISTICS (TYPICAL) 104 7 5 3 2 Ciss 103 7 5 3 2 Coss 102 7 5 Tch = 25°C 3 2 f = 1MHZ Crss 103 7 5 SWITCHING TIME (ns) 0 Tch = 25°C VDD = 200V VGS = 10V RGEN = RGS = 50Ω 3 td(off) 2 102 7 5 tf tr td(on) 3 2 VGS = 0V 101 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 DRAIN-SOURCE VOLTAGE VDS (V) 101 0 10 2 3 5 7 101 2 3 5 7 102 DRAIN CURRENT ID (A) Feb.1999 MITSUBISHI Nch POWER MOSFET FS10SM-16A HIGH-SPEED SWITCHING USE 20 SOURCE CURRENT IS (A) VDS = 250V 12 400V 8 600V 4 0 20 40 60 80 24 16 75°C 25°C 8 0 0 0.8 1.6 2.4 3.2 4.0 SOURCE-DRAIN VOLTAGE VSD (V) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 5.0 VGS = 10V ID = 1/2ID Pulse Test 3 2 100 7 5 3 2 –50 0 50 100 3.0 2.0 1.0 0 150 BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 VGS = 0V ID = 1mA 1.2 1.0 0.8 0.6 –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) VDS = 10V ID = 1mA 4.0 CHANNEL TEMPERATURE Tch (°C) 0.4 TC = 125°C GATE CHARGE Qg (nC) 101 7 5 10–1 VGS = 0V Pulse Test 32 100 GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C) 40 Tch = 25°C ID = 10A 16 0 DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) TRANSIENT THERMAL IMPEDANCE Zth (ch–c) (°C/W) GATE-SOURCE VOLTAGE VGS (V) GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101 7 5 3 2 100 D = 1.0 7 5 0.5 3 2 0.2 10–1 0.1 7 5 3 2 0.05 0.02 0.01 Single Pulse 10–2 –4 10 2 3 5710–3 2 3 5710–22 3 5710–12 3 57100 2 3 57101 2 3 57102 PULSE WIDTH tw (s) Feb.1999