Powerex Power FS10VS-10 Nch power mosfet high-speed switching use Datasheet

MITSUBISHI Nch POWER MOSFET
FS10VS-10
HIGH-SPEED SWITCHING USE
FS10VS-10
OUTLINE DRAWING
r
Dimensions in mm
4.5
1.5MAX.
10.5MAX.
0
+0.3
–0
(1.5)
3.0 +0.3
–0.5
1.5MAX.
8.6 ± 0.3
9.8 ± 0.5
1.3
1
5
0.5
q w e
wr
q GATE
w DRAIN
e SOURCE
r DRAIN
q
¡VDSS ................................................................................ 500V
¡rDS (ON) (MAX) .............................................................. 0.90Ω
¡ID .......................................................................................... 10A
2.6 ± 0.4
4.5
0.8
e
TO-220S
APPLICATION
SMPS, DC-DC Converter, battery charger, power
supply of printer, copier, HDD, FDD, TV, VCR, personal computer etc.
MAXIMUM RATINGS
Symbol
(Tc = 25°C)
Parameter
VDSS
VGSS
Drain-source voltage
Gate-source voltage
ID
IDM
PD
Drain current
Drain current (Pulsed)
Maximum power dissipation
Tch
Tstg
—
Channel temperature
Storage temperature
Weight
Conditions
VGS = 0V
VDS = 0V
Typical value
Ratings
Unit
500
±30
V
V
10
30
125
A
A
W
–55 ~ +150
–55 ~ +150
1.2
°C
°C
g
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS10VS-10
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS
(Tch = 25°C)
Symbol
Parameter
V (BR) DSS
Drain-source breakdown voltage
Gate-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
V (BR) GSS
IGSS
IDSS
VGS (th)
rDS (ON)
Gate-source threshold voltage
Drain-source on-state resistance
VDS (ON)
yfs
Ciss
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Coss
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
Limits
Test conditions
Turn-off delay time
Fall time
Source-drain voltage
Typ.
Max.
ID = 1mA, VGS = 0V
IG = ±100µA, VDS = 0V
VGS = ±25V, VDS = 0V
500
±30
—
—
—
—
—
—
±10
V
V
µA
VDS = 500V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 5A, VGS = 10V
ID = 5A, VGS = 10V
ID = 5A, VDS = 10V
—
2
—
—
—
3
0.70
3.5
1
4
0.90
4.5
mA
V
Ω
V
3.3
—
—
—
5.5
1100
135
20
—
—
—
—
S
pF
pF
pF
—
—
—
—
20
30
95
35
—
—
—
—
ns
ns
ns
ns
—
1.5
2.0
V
—
—
1.0
°C/W
VDS = 25V, VGS = 0V, f = 1MHz
VDD = 200V, ID = 5A, VGS = 10V, RGEN = RGS = 50Ω
IS = 5A, VGS = 0V
Channel to case
Thermal resistance
Unit
Min.
PERFORMANCE CURVES
160
120
80
40
0
MAXIMUM SAFE OPERATING AREA
5
3
2
DRAIN CURRENT ID (A)
POWER DISSIPATION PD (W)
POWER DISSIPATION DERATING CURVE
200
0
50
100
150
100µs
1ms
100
7
5
3
2
10–1
7
5
200
tw=10µs
101
7
5
3
2
10ms
2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 2
CASE TEMPERATURE TC (°C)
16
TC = 25°C
Pulse Test
12
6V
8
4
5V
OUTPUT CHARACTERISTICS
(TYPICAL)
10
DRAIN CURRENT ID (A)
DRAIN CURRENT ID (A)
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
VGS = 20V
10V
PD=
8V
125W
20
DC
TC = 25°C
Single Pulse
VGS=20V
10V
8V
8
6V
PD = 125W
6
4
5V
2
TC = 25°C
Pulse Test
0
0
10
20
30
40
50
DRAIN-SOURCE VOLTAGE VDS (V)
0
0
4
8
12
16
20
DRAIN-SOURCE VOLTAGE VDS (V)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS10VS-10
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
2.0
TC = 25°C
Pulse Test
32
24
ID = 15A
16
10A
8
5A
0
0
4
8
12
16
DRAIN-SOURCE ON-STATE
RESISTANCE rDS (ON) (Ω)
DRAIN-SOURCE ON-STATE
VOLTAGE VDS (ON) (V)
40
FORWARD TRANSFER
ADMITTANCE yfs (S)
DRAIN CURRENT ID (A)
0.4
101
7
5
4
4
8
12
16
VDS = 10V
Pulse Test
TC=25°C
75°C
3
2
150°C
100
7
5
3
2
10–1 –1
10
20
2 3
5 7 100
2 3
5 7 101
GATE-SOURCE VOLTAGE VGS (V)
DRAIN CURRENT ID (A)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
SWITCHING CHARACTERISTICS
(TYPICAL)
103
7
5
2
Ciss
3
2
Coss
Crss
101 Tch = 25°C
7 f = 1MHz
5 VGS = 0V
2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3
DRAIN-SOURCE VOLTAGE VDS (V)
SWITCHING TIME (ns)
CAPACITANCE
Ciss, Coss, Crss (pF)
0.8
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
8
3
2
1.2
TRANSFER CHARACTERISTICS
(TYPICAL)
12
102
7
5
20V
DRAIN CURRENT ID (A)
16
103
7
5
VGS = 10V
GATE-SOURCE VOLTAGE VGS (V)
TC = 25°C
VDS = 50V
Pulse Test
0
1.6
0
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
20
20
0
TC = 25°C
Pulse Test
Tch = 25°C
VDD = 200V
VGS = 10V
RGEN = RGS = 50Ω
3
2
102
7
5
td(off)
3
2
tr
td(on)
101
10–1
tf
2 3
5 7 100
2 3
5 7 101
DRAIN CURRENT ID (A)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS10VS-10
HIGH-SPEED SWITCHING USE
GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
VDS = 100V
200V
12
400V
8
4
101
7
5
0
20
40
60
80
25°C
16
75°C
8
0
0.8
1.6
2.4
3.2
4.0
SOURCE-DRAIN VOLTAGE VSD (V)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
5.0
VGS = 10V
ID = 1/2ID
Pulse Test
100
7
5
3
2
–50
0
50
100
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
1.4
VGS = 0V
ID = 1mA
1.2
1.0
0.8
0.6
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
VDS = 10V
ID = 1mA
4.0
3.0
2.0
1.0
0
150
CHANNEL TEMPERATURE Tch (°C)
0.4
TC=125°C
24
GATE CHARGE Qg (nC)
3
2
10–1
VGS = 0V
Pulse Test
32
0
100
GATE-SOURCE THRESHOLD
VOLTAGE VGS (th) (V)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE VBR (DSS) (t°C)
SOURCE CURRENT IS (A)
16
0
DRAIN-SOURCE BREAKDOWN VOLTAGE VBR (DSS) (25°C)
40
Tch = 25°C
ID = 10A
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
TRANSIENT THERMAL IMPEDANCE Zth (ch – c) (°C/ W)
GATE-SOURCE VOLTAGE VGS (V)
20
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
101
7
5
3
2
100
7
5
3
2
10–1
7
5
3
2
D=1
0.5
0.2
0.1
PDM
tw
0.05
0.02
0.01
T
D= tw
T
Single Pulse
10–2
10–4 2 3 5710–3 2 3 5710–22 3 5710–12 3 57100 2 3 57101 2 3 57102
PULSE WIDTH tw (s)
Feb.1999
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