MITSUBISHI Nch POWER MOSFET ARY FS12UMA-4A MIN RELI . ation change. ecific nal sp subject to fi a t o re is is nic limits a e: Th tr Notice parame Som P HIGH-SPEED SWITCHING USE FS12UMA-4A OUTLINE DRAWING Dimensions in mm 4.5 10.5MAX. 1.3 16 7.0 3.2 ➃ 1.0 3.8MAX. 0.8 2.54 2.54 0.5 2.6 4.5MAX. 12.5MIN. φ 3.6 ➀ ➁ ➂ ➁➃ ● 10V DRIVE ● VDSS ............................................................................... 200V ● rDS (ON) (MAX) ............................................................. 0.40Ω ● ID ......................................................................................... 12A ➀ GATE ➁ DRAIN ➂ SOURCE ➃ DRAIN ➀ ➂ TO-220 APPLICATION CS Switch for CRT Display monitor, Switch mode power supply, etc. MAXIMUM RATINGS Symbol (Tc = 25°C) Parameter VDSS VGSS ID Drain-source voltage Gate-source voltage Drain current IDM IDA PD Tch Tstg Drain current (Pulsed) Avalanche drain current (Pulsed) Maximum power dissipation Channel temperature Storage temperature — Weight Conditions VGS = 0V VDS = 0V L = 200µH Typical value Ratings Unit 200 ±20 12 V V A 36 12 50 –55 ~ +150 –55 ~ +150 A A W °C °C 2.0 g Sep.1998 MITSUBISHI Nch POWER MOSFET ARY FS12UMA-4A MIN RELI . ation change. ecific nal sp subject to fi a t o re is is nic limits a e: Th tr Notice parame Som P HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS (Tch = 25°C) Symbol Parameter V (BR) DSS Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakage current Drain-source leakage current V (BR) GSS IGSS IDSS VGS (th) rDS (ON) Gate-source threshold voltage Drain-source on-state resistance VDS (ON) yfs Ciss Drain-source on-state voltage Forward transfer admittance Input capacitance Coss Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Crss td (on) tr td (off) tf VSD Rth (ch-c) Limits Test conditions Turn-off delay time Fall time Source-drain voltage ID = 1mA, VGS = 0V IGS = ±10µA, VDS = 0V VGS = ±20V, VDS = 0V VDS = 200V, VGS = 0V ID = 1mA, VDS = 10V ID = 6A, VGS = 10V ID = 6A, VGS = 10V ID = 6A, VDS = 10V VDS = 25V, VGS = 0V, f = 1MHz VDD = 100V, ID = 6A, VGS = 10V, RGEN = RGS = 50Ω IS = 6A, VGS = 0V Channel to case Thermal resistance Unit Min. 200 ±20 — Typ. — Max. — — ±10 V V µA — 2.0 — — — 3.0 0.30 1.80 1 4.0 0.40 2.40 mA V Ω V — — — — 8.0 700 95 30 — — — — S pF pF pF — — — — 15 20 110 35 — — — — ns ns ns ns — 0.95 — V — — 2.50 °C/W PERFORMANCE CURVES MAXIMUM SAFE OPERATING AREA 5 3 2 DRAIN CURRENT ID (A) POWER DISSIPATION PD (W) POWER DISSIPATION DERATING CURVE 100 80 60 40 20 7 5 100µs 3 2 1ms 100 7 5 10ms DC 3 2 10–1 TC = 25°C 0 0 50 100 150 7 5 200 DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) 5V 12 TC = 25°C Pulse Test PD = 50W 8 4V 4 0 4 8 12 16 20 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN CURRENT ID (A) 10 VGS = 20V 10V 8V 6V 16 0 Single Pulse 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 2 CASE TEMPERATURE TC (°C) 20 DRAIN CURRENT ID (A) tw = 10µs 101 TC = 25°C Pulse Test 8 4.5V VGS = 20V 10V 8V PD = 50W 6 4 4.0V 2 0 0 2 4 6 8 10 DRAIN-SOURCE VOLTAGE VDS (V) Sep.1998 MITSUBISHI Nch POWER MOSFET ARY FS12UMA-4A MIN RELI . ation change. ecific nal sp subject to fi a t o re is is nic limits a e: Th tr Notice parame Som P HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 12 8 ID = 18A 4 12A 6A DRAIN CURRENT ID (A) 0 4 8 12 16 DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (Ω) 16 0 0.5 TC = 25°C Pulse Test 0.3 VGS = 10V 20V 0.2 0.1 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) TRANSFER CHARACTERISTICS (TYPICAL) FORWARD TRANSFER ADMITTANCE VS. DRAIN CURRENT (TYPICAL) 5 4 3 16 2 12 8 4 TC = 25°C VDS = 10V Pulse Test 0 4 8 12 16 VDS = 10V Pulse Test TC = 25°C 75°C 125°C 101 7 5 4 3 2 100 7 5 100 20 2 3 4 5 7 101 2 3 4 5 7 102 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) SWITCHING CHARACTERISTICS (TYPICAL) 104 2 7 5 td(off) 102 3 2 103 Ciss 7 5 3 2 102 Coss 7 5 3 TCh = 25°C 2 f = 1MHZ VGS = 0V 101 0 10 2 3 4 5 7 101 Crss 2 3 4 5 7 102 DRAIN-SOURCE VOLTAGE VDS (V) SWITCHING TIME (ns) CAPACITANCE Ciss, Coss, Crss (pF) 0.4 20 0 TC = 25°C Pulse Test 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 20 FORWARD TRANSFER ADMITTANCE yfs (S) DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) 20 ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 7 5 4 3 tf 2 tr 101 td(on) 7 5 4 3 2 100 TCh = 25°C VDD = 100V VGS = 10V RGEN = RGS = 50Ω 2 3 4 5 7 101 2 3 4 5 7 102 DRAIN CURRENT ID (A) Sep.1998 MITSUBISHI Nch POWER MOSFET ARY FS12UMA-4A MIN RELI . ation change. ecific nal sp subject to fi a t o re is is nic limits a e: Th tr Notice parame Som P HIGH-SPEED SWITCHING USE 20 SOURCE CURRENT IS (A) 12 VDS = 50V 100V 150V 8 4 0 20 40 60 80 12 4 0.8 1.6 2.4 3.2 4.0 SOURCE-DRAIN VOLTAGE VSD (V) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 5.0 3 2 100 7 5 3 2 –50 0 50 100 3.0 2.0 1.0 0 150 BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) VGS = 0V ID = 1mA 1.2 1.0 0.8 0.6 –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) VDS = 10V ID = 1mA 4.0 CHANNEL TEMPERATURE Tch (°C) 0.4 0 GATE CHARGE Qg (nC) VGS = 10V 7 ID = 6A 5 Pulse Test 1.4 TC = 125°C 75°C 25°C 8 0 101 10–1 VGS = 0V Pulse Test 16 100 GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C) 20 TCh = 25°C ID = 12A 16 0 DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) TRANSIENT THERMAL IMPEDANCE Zth (ch – c) (°C/ W) GATE-SOURCE VOLTAGE VGS (V) GATE-SOURCE VOLTAGE VS. GATE CHARGE (TYPICAL) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101 7 5 3 D = 1.0 2 0.5 100 0.2 7 5 0.1 3 2 10–1 7 5 PDM 0.05 0.02 0.01 Single Pulse tw T D= tw T 3 2 10–2 –4 10 2 3 5 710–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 PULSE WIDTH tw (s) Sep.1998