Powerex Power FS14UM-9 Nch power mosfet high-speed switching use Datasheet

MITSUBISHI Nch POWER MOSFET
FS14UM-9
HIGH-SPEED SWITCHING USE
FS14UM-9
OUTLINE DRAWING
Dimensions in mm
4.5
10.5MAX.
1.3
16
7.0
3.2
r
1.0
3.8MAX.
0.8
2.54
2.54
0.5
2.6
4.5MAX.
12.5MIN.
φ 3.6
q w e
wr
q GATE
w DRAIN
e SOURCE
r DRAIN
q
¡VDSS ................................................................................ 450V
¡rDS (ON) (MAX) .............................................................. 0.52Ω
¡ID ......................................................................................... 14A
e
TO-220
APPLICATION
SMPS, DC-DC Converter, battery charger, power
supply of printer, copier, HDD, FDD, TV, VCR, personal computer etc.
MAXIMUM RATINGS
Symbol
(Tc = 25°C)
Parameter
VDSS
VGSS
Drain-source voltage
Gate-source voltage
ID
IDM
PD
Tch
Tstg
Drain current
Drain current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
—
Weight
Conditions
VGS = 0V
VDS = 0V
Typical value
Ratings
Unit
450
±30
V
V
14
42
150
–55 ~ +150
–55 ~ +150
A
A
W
°C
°C
2.0
g
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS14UM-9
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS
(Tch = 25°C)
Symbol
Parameter
V (BR) DSS
Drain-source breakdown voltage
Gate-source breakdown voltage
V (BR) GSS
IGSS
IDSS
VGS (th)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
Limits
Test conditions
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
ID = 1mA, VGS = 0V
IG = ±100µA, VDS = 0V
VGS = ±25V, VDS = 0V
VDS = 450V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 7A, VGS = 10V
ID = 7A, VGS = 10V
ID = 7A, VDS = 10V
VDS = 25V, VGS = 0V, f = 1MHz
VDD = 200V, ID = 7A, VGS = 10V, RGEN = RGS = 50Ω
IS = 7A, VGS = 0V
Channel to case
Thermal resistance
Unit
Min.
Typ.
Max.
450
±30
—
—
—
—
—
—
±10
V
V
µA
—
2
—
—
—
3
0.40
2.8
1
4
0.52
3.6
mA
V
Ω
V
4.5
—
—
—
7.0
1500
180
30
—
—
—
—
S
pF
pF
pF
—
—
—
—
30
50
130
50
—
—
—
—
ns
ns
ns
ns
—
1.5
2.0
V
—
—
0.83
°C/W
PERFORMANCE CURVES
160
120
80
40
0
MAXIMUM SAFE OPERATING AREA
5
3
2
DRAIN CURRENT ID (A)
POWER DISSIPATION PD (W)
POWER DISSIPATION DERATING CURVE
200
0
50
100
150
100µs
100
7
5
3
2
10ms
1ms
DC
TC = 25°C
Single Pulse
2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 2
CASE TEMPERATURE TC (°C)
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
OUTPUT CHARACTERISTICS
(TYPICAL)
VGS = 20V
10V
PD = 150W
8V
50
20
PD = 150W
TC = 25°C
Pulse Test
40
VGS=20V
10V
8V
30
20
6V
10
DRAIN CURRENT ID (A)
DRAIN CURRENT ID (A)
101
7
5
3
2
10–1
7
5
200
tw=10µs
TC = 25°C
Pulse Test
16
6V
12
8
5V
4
5V
0
0
10
20
30
40
50
DRAIN-SOURCE VOLTAGE VDS (V)
0
0
4
8
12
16
20
DRAIN-SOURCE VOLTAGE VDS (V)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS14UM-9
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
2.0
TC = 25°C
Pulse Test
32
24
ID = 25A
16
20A
14A
8
7A
0
0
4
8
12
16
DRAIN-SOURCE ON-STATE
RESISTANCE rDS (ON) (Ω)
DRAIN-SOURCE ON-STATE
VOLTAGE VDS (ON) (V)
40
102
7
5
FORWARD TRANSFER
ADMITTANCE yfs (S)
DRAIN CURRENT ID (A)
0.4
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
16
8
4
8
12
16
TC=25°C
3
2
VDS = 10V
Pulse Test
75°C
125°C
101
7
5
3
2
100 0
10
20
2 3
5 7 101
2 3
5 7 102
GATE-SOURCE VOLTAGE VGS (V)
DRAIN CURRENT ID (A)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
SWITCHING CHARACTERISTICS
(TYPICAL)
103
7
5
5
Ciss
103
7
5
Coss
102
7
5
3 Tch = 25°C
Crss
2 f = 1MHz
VGS = 0V
101
2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3
DRAIN-SOURCE VOLTAGE VDS (V)
SWITCHING TIME (ns)
CAPACITANCE
Ciss, Coss, Crss (pF)
20V
TRANSFER CHARACTERISTICS
(TYPICAL)
24
3
2
VGS = 10V
0.8
DRAIN CURRENT ID (A)
32
3
2
1.2
GATE-SOURCE VOLTAGE VGS (V)
TC = 25°C
VDS = 50V
Pulse Test
0
1.6
0
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
20
40
0
TC = 25°C
Pulse Test
3
2
102
7
5
3
2
101
100
Tch = 25°C
VDD = 200V
VGS = 10V
RGEN = RGS = 50Ω
td(off)
tf
tr
td(on)
2 3
5 7 101
2 3
5 7 102
DRAIN CURRENT ID (A)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS14UM-9
HIGH-SPEED SWITCHING USE
GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
200V
12
400V
8
4
101
7
5
20
40
60
80
75°C
16
8
0
0.8
1.6
2.4
3.2
4.0
SOURCE-DRAIN VOLTAGE VSD (V)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
5.0
VGS = 10V
ID = 1/2ID
Pulse Test
100
7
5
3
2
–50
0
50
100
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
1.4
VGS = 0V
ID = 1mA
1.2
1.0
0.8
0.6
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
VDS = 10V
ID = 1mA
4.0
3.0
2.0
1.0
0
150
CHANNEL TEMPERATURE Tch (°C)
0.4
25°C
24
GATE CHARGE Qg (nC)
3
2
10–1
32
0
100
GATE-SOURCE THRESHOLD
VOLTAGE VGS (th) (V)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE VBR (DSS) (t°C)
VDS = 100V
0
VGS = 0V
Pulse Test
TC=125°C
SOURCE CURRENT IS (A)
16
0
DRAIN-SOURCE BREAKDOWN VOLTAGE VBR (DSS) (25°C)
40
Tch = 25°C
ID = 14A
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
TRANSIENT THERMAL IMPEDANCE Zth (ch – c) (°C/ W)
GATE-SOURCE VOLTAGE VGS (V)
20
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
101
7
5
3
2
100 D=1
7
5 0.5
3 0.2
2
0.1
10–1
7
5
3
2
PDM
tw
0.05
0.02
0.01
T
D= tw
T
Single Pulse
10–2
10–4 2 3 5710–3 2 3 5710–22 3 5710–12 3 57100 2 3 57101 2 3 57102
PULSE WIDTH tw (s)
Feb.1999
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