MITSUBISHI Nch POWER MOSFET FS16SM-10 HIGH-SPEED SWITCHING USE FS16SM-10 OUTLINE DRAWING Dimensions in mm 4.5 15.9MAX. 1.5 5.0 r 4 2 20.0 φ 3.2 2 19.5MIN. 4.4 1.0 q w 5.45 e 5.45 0.6 2.8 4 wr q GATE w DRAIN e SOURCE r DRAIN q ¡VDSS ................................................................................ 500V ¡rDS (ON) (MAX) .............................................................. 0.56Ω ¡ID .......................................................................................... 16A e TO-3P APPLICATION SMPS, DC-DC Converter, battery charger, power supply of printer, copier, HDD, FDD, TV, VCR, personal computer etc. MAXIMUM RATINGS Symbol (Tc = 25°C) Parameter VDSS VGSS Drain-source voltage Gate-source voltage ID IDM PD Drain current Drain current (Pulsed) Maximum power dissipation Tch Tstg — Channel temperature Storage temperature Weight Conditions VGS = 0V VDS = 0V Typical value Ratings Unit 500 ±30 V V 16 48 150 A A W –55 ~ +150 –55 ~ +150 4.8 °C °C g Feb.1999 MITSUBISHI Nch POWER MOSFET FS16SM-10 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS (Tch = 25°C) Symbol Parameter V (BR) DSS Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakage current Drain-source leakage current V (BR) GSS IGSS IDSS VGS (th) rDS (ON) Gate-source threshold voltage Drain-source on-state resistance VDS (ON) yfs Ciss Drain-source on-state voltage Forward transfer admittance Input capacitance Coss Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Crss td (on) tr td (off) tf Typ. Max. ID = 1mA, VGS = 0V IG = ±100µA, VDS = 0V VGS = ±25V, VDS = 0V 500 ±30 — — — — — — ±10 V V µA VDS = 500V, VGS = 0V ID = 1mA, VDS = 10V ID = 8A, VGS = 10V ID = 8A, VGS = 10V ID = 8A, VDS = 10V — 2 — — — 3 0.43 3.44 1 4 0.56 4.48 mA V Ω V 6.0 — — — 8.0 1700 230 40 — — — — S pF pF pF — — — — 30 50 170 60 — — — — ns ns ns ns — 1.5 2.0 V — — 0.83 °C/W VDD = 200V, ID = 8A, VGS = 10V, RGEN = RGS = 50Ω IS = 8A, VGS = 0V Channel to case Thermal resistance Unit Min. VDS = 25V, VGS = 0V, f = 1MHz Turn-off delay time Fall time Source-drain voltage VSD Rth (ch-c) Limits Test conditions PERFORMANCE CURVES MAXIMUM SAFE OPERATING AREA 160 120 80 40 0 5 3 2 DRAIN CURRENT ID (A) POWER DISSIPATION PD (W) POWER DISSIPATION DERATING CURVE 200 0 50 100 150 100µs 100 7 5 3 2 10ms 1ms 200 DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) VGS =20V 10V 6V 20 DRAIN CURRENT ID (A) VGS = 20V 10V 7V 30 6V 20 5V 10 10 20 30 40 50 DRAIN-SOURCE VOLTAGE VDS (V) TC = 25°C Pulse Test PD = 150W TC = 25°C Pulse Test 40 0 DC TC = 25°C Single Pulse CASE TEMPERATURE TC (°C) PD = 150W DRAIN CURRENT ID (A) 101 7 5 3 2 10–1 7 5 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 50 0 tw=10µs 16 5.5V 12 8 5V 4 0 0 4 8 12 16 20 DRAIN-SOURCE VOLTAGE VDS (V) Feb.1999 MITSUBISHI Nch POWER MOSFET FS16SM-10 HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 1.0 16 TC = 25°C Pulse Test 12 16A 8 8A 4 0 4 8 12 DRAIN CURRENT ID (A) 0.2 FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) 102 7 5 16 8 103 7 5 3 2 0.4 TRANSFER CHARACTERISTICS (TYPICAL) 24 104 7 5 3 2 20V 0.6 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 20 TC = 25°C VDS = 50V Pulse Test 0 VGS = 10V 0.8 DRAIN CURRENT ID (A) 32 0 TC = 25°C Pulse Test GATE-SOURCE VOLTAGE VGS (V) 40 CAPACITANCE Ciss, Coss, Crss (pF) 16 FORWARD TRANSFER ADMITTANCE yfs (S) 0 DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (Ω) ID = 25A 4 8 12 16 VDS = 10V Pulse Test 3 2 101 7 5 TC = 25°C 125°C 3 2 100 0 10 20 2 3 75°C 5 7 101 2 3 5 7 102 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) SWITCHING CHARACTERISTICS (TYPICAL) 103 7 5 Ciss Coss 102 7 5 Crss 3 Tch = 25°C 2 f = 1MHz VGS = 0V 101 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN-SOURCE VOLTAGE VDS (V) SWITCHING TIME (ns) DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) 20 Tch = 25°C VDD = 200V VGS = 10V RGEN = RGS = 50Ω 3 2 td(off) 102 7 5 tf tr 3 2 101 0 10 td(on) 2 3 5 7 101 2 3 5 7 102 DRAIN CURRENT ID (A) Feb.1999 MITSUBISHI Nch POWER MOSFET FS16SM-10 HIGH-SPEED SWITCHING USE GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) 12 200V 400V 8 4 101 7 5 20 40 60 80 24 25°C 16 8 0 0.8 1.6 2.4 3.2 4.0 SOURCE-DRAIN VOLTAGE VSD (V) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 5.0 VGS = 10V ID = 1/2ID Pulse Test 100 7 5 3 2 –50 0 50 100 BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 VGS = 0V ID = 1mA 1.2 1.0 0.8 0.6 –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) VDS = 10V ID = 1mA 4.0 3.0 2.0 1.0 0 150 CHANNEL TEMPERATURE Tch (°C) 0.4 75°C GATE CHARGE Qg (nC) 3 2 10–1 32 0 100 GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C) SOURCE CURRENT IS (A) VDS = 100V 0 VGS = 0V Pulse Test TC = 125°C 16 0 DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C) 40 Tch = 25°C ID =16A –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) TRANSIENT THERMAL IMPEDANCE Zth (ch – c) (°C/ W) GATE-SOURCE VOLTAGE VGS (V) 20 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101 7 5 3 2 100 D=1 7 5 0.5 3 2 0.2 0.1 10–1 7 5 3 2 PDM tw 0.05 0.02 0.01 Single Pulse T D= tw T 10–2 10–4 2 3 5710–3 2 3 5710–22 3 5710–12 3 57100 2 3 57101 2 3 57102 PULSE WIDTH tw (s) Feb.1999