Renesas FS16SM-9 High-speed switching use Datasheet

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MITSUBISHI Nch POWER MOSFET
FS16SM-9
HIGH-SPEED SWITCHING USE
FS16SM-9
OUTLINE DRAWING
Dimensions in mm
4.5
15.9MAX.
1.5
5.0
r
4
2
20.0
φ 3.2
2
19.5MIN.
4.4
1.0
q
w
5.45
e
5.45
0.6
2.8
4
wr
q GATE
w DRAIN
e SOURCE
r DRAIN
q
¡VDSS ................................................................................ 450V
¡rDS (ON) (MAX) .............................................................. 0.45Ω
¡ID ......................................................................................... 16A
e
TO-3P
APPLICATION
SMPS, DC-DC Converter, battery charger, power
supply of printer, copier, HDD, FDD, TV, VCR, personal computer etc.
MAXIMUM RATINGS
Symbol
(Tc = 25°C)
Parameter
VDSS
VGSS
Drain-source voltage
Gate-source voltage
ID
IDM
PD
Tch
Tstg
Drain current
Drain current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
—
Weight
Conditions
VGS = 0V
VDS = 0V
Typical value
Ratings
Unit
450
±30
V
V
16
48
150
–55 ~ +150
–55 ~ +150
A
A
W
°C
°C
4.8
g
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS16SM-9
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS
(Tch = 25°C)
Symbol
Parameter
V (BR) DSS
Drain-source breakdown voltage
Gate-source breakdown voltage
V (BR) GSS
IGSS
IDSS
VGS (th)
rDS (ON)
VDS (ON)
ID = 1mA, VGS = 0V
IG = ±100µA, VDS = 0V
VGS = ±25V, VDS = 0V
VDS = 450V, VGS = 0V
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
yfs
Ciss
Coss
Crss
VDD = 200V, ID = 8A, VGS = 10V, RGEN = RGS = 50Ω
Turn-off delay time
Fall time
Source-drain voltage
VSD
Rth (ch-c)
ID = 1mA, VDS = 10V
ID = 8A, VGS = 10V
ID = 8A, VGS = 10V
ID = 8A, VDS = 10V
VDS = 25V, VGS = 0V, f = 1MHz
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
td (on)
tr
td (off)
tf
Limits
Test conditions
IS = 8A, VGS = 0V
Channel to case
Thermal resistance
Unit
Min.
Typ.
Max.
450
±30
—
—
—
—
—
—
±10
V
V
µA
—
2
—
—
—
3
0.35
2.80
1
4
0.45
3.60
mA
V
Ω
V
6.0
—
—
—
8.0
1700
230
40
—
—
—
—
S
pF
pF
pF
—
—
—
—
30
50
170
60
—
—
—
—
ns
ns
ns
ns
—
1.5
2.0
V
—
—
0.83
°C/W
PERFORMANCE CURVES
MAXIMUM SAFE OPERATING AREA
160
120
80
40
0
5
3
2
DRAIN CURRENT ID (A)
POWER DISSIPATION PD (W)
POWER DISSIPATION DERATING CURVE
200
0
50
100
150
101
7
5
3
2
100µs
100
7
5
3
2
10ms
1ms
DC
TC = 25°C
Single Pulse
10–1
7
5
100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
200
CASE TEMPERATURE TC (°C)
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
OUTPUT CHARACTERISTICS
(TYPICAL)
VGS =20V 10V 6V
50
20
VGS = 20V
10V
6V
30
20
5V
10
DRAIN CURRENT ID (A)
40
TC = 25°C
Pulse Test
PD =
150W
TC = 25°C
Pulse Test
PD =
150W
DRAIN CURRENT ID (A)
tw=10µs
16
5V
12
8
4
4V
4V
0
0
10
20
30
40
50
DRAIN-SOURCE VOLTAGE VDS (V)
0
0
4
8
12
16
20
DRAIN-SOURCE VOLTAGE VDS (V)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS16SM-9
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
1.0
16
TC = 25°C
Pulse Test
12
16A
8
8A
4
0
4
8
12
DRAIN CURRENT ID (A)
0.2
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
102
7
5
16
8
103
7
5
3
2
0.4
TRANSFER CHARACTERISTICS
(TYPICAL)
24
104
7
5
3
2
0.6
0
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
20
TC = 25°C
VDS = 50V
Pulse Test
0
20V
0.8
DRAIN CURRENT ID (A)
32
0
VGS = 10V
TC = 25°C
Pulse Test
GATE-SOURCE VOLTAGE VGS (V)
40
CAPACITANCE
Ciss, Coss, Crss (pF)
16
FORWARD TRANSFER
ADMITTANCE yfs (S)
0
DRAIN-SOURCE ON-STATE
RESISTANCE rDS (ON) (Ω)
ID = 25A
4
8
12
16
VDS = 10V
Pulse Test
3
2
101
7
5
TC = 25°C
125°C
3
2
100 0
10
20
2 3
75°C
5 7 101
2 3
5 7 102
GATE-SOURCE VOLTAGE VGS (V)
DRAIN CURRENT ID (A)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
SWITCHING CHARACTERISTICS
(TYPICAL)
103
7
5
Ciss
Coss
102
7
5
Crss
3 Tch = 25°C
2 f = 1MHz
VGS = 0V
101
3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3
DRAIN-SOURCE VOLTAGE VDS (V)
SWITCHING TIME (ns)
DRAIN-SOURCE ON-STATE
VOLTAGE VDS (ON) (V)
20
Tch = 25°C
VDD = 200V
VGS = 10V
RGEN = RGS = 50Ω
3
2
td(off)
102
7
5
tf
tr
3
2
101 0
10
td(on)
2 3
5 7 101
2 3
5 7 102
DRAIN CURRENT ID (A)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS16SM-9
HIGH-SPEED SWITCHING USE
GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
12
200V
400V
8
4
101
7
5
20
40
60
80
24
25°C
16
8
0
0.8
1.6
2.4
3.2
4.0
SOURCE-DRAIN VOLTAGE VSD (V)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
5.0
VGS = 10V
ID = 1/2ID
Pulse Test
100
7
5
3
2
–50
0
50
100
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
1.4
VGS = 0V
ID = 1mA
1.2
1.0
0.8
0.6
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
VDS = 10V
ID = 1mA
4.0
3.0
2.0
1.0
0
150
CHANNEL TEMPERATURE Tch (°C)
0.4
75°C
GATE CHARGE Qg (nC)
3
2
10–1
32
0
100
GATE-SOURCE THRESHOLD
VOLTAGE VGS (th) (V)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C)
SOURCE CURRENT IS (A)
VDS = 100V
0
VGS = 0V
Pulse Test
TC = 125°C
16
0
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C)
40
Tch = 25°C
ID =16A
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
TRANSIENT THERMAL IMPEDANCE Zth (ch–c) (°C/W)
GATE-SOURCE VOLTAGE VGS (V)
20
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
101
7
5
3
2
100 D=1
7
5 0.5
3
2 0.2
0.1
10–1
7
5
3
2
PDM
tw
0.05
0.02
0.01
Single Pulse
T
D= tw
T
10–2
10–4 2 3 5710–3 2 3 5710–22 3 5710–12 3 57100 2 3 57101 2 3 57102
PULSE WIDTH tw (s)
Feb.1999
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