Renesas FS20VSJ-3 High-speed switching use pch power mos fet Datasheet

FX20VSJ-3
High-Speed Switching Use
Pch Power MOS FET
REJ03G0273-0100
Rev.1.00
Aug.20.2004
Features
•
•
•
•
•
Drive voltage : 4 V
VDSS : – 150 V
rDS(ON) (max) : 0.29 Ω
ID : – 20 A
Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 100 ns
Outline
TO-220S
3
4
1
1.
2.
3.
4.
1
2
Gate
Drain
Source
Drain
3
2, 4
Applications
Motor control, lamp control, solenoid control, DC-DC converters, etc.
Maximum Ratings
(Tc = 25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Avalanche current (Pulsed)
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Mass
Rev.1.00, Aug.20.2004, page 1 of 6
Symbol
VDSS
VGSS
Ratings
–150
±20
Unit
V
V
ID
IDM
IDA
IS
ISM
PD
Tch
Tstg
—
–20
–80
–20
–20
–80
70
– 55 to +150
– 55 to +150
1.2
A
A
A
A
A
W
°C
°C
g
Conditions
VGS = 0 V
VDS = 0 V
L = 30 µH
Typical value
FX20VSJ-3
Electrical Characteristics
(Tch = 25°C)
Parameter
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
Rev.1.00, Aug.20.2004, page 2 of 6
Symbol
V(BR)DSS
IGSS
IDSS
VGS(th)
rDS(ON)
rDS(ON)
VDS(ON)
| yfs |
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VSD
Rth(ch-c)
trr
Min.
–150
—
—
–1.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
—
—
—
–1.5
0.23
0.25
–2.3
17.5
4470
248
115
15
42
273
114
–1.0
—
100
Max.
—
±0.1
–0.1
–2.0
0.29
0.32
–2.9
—
—
—
—
—
—
—
—
–1.5
1.79
—
Unit
V
µA
mA
V
Ω
Ω
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
ns
Test conditions
ID = –1 mA, VGS = 0 V
VGS = ±20 V, VDS = 0 V
VDS = –150 V, VGS = 0 V
ID = –1 mA, VDS = –10 V
ID = –10 A, VGS = –10 V
ID = –10 A, VGS = – 4 V
ID = –10 A, VGS = –10 V
ID = –10 A, VDS = –10 V
VDS = –10 V, VGS = 0 V,
f = 1MHz
VDD = – 80 V, ID = –10 A,
VGS = –10 V,
RGEN = RGS = 50 Ω
IS = –10 A, VGS = 0 V
Channel to case
IS = – 20 A, dis/dt = 100 A/µs
FX20VSJ-3
Performance Curves
Drain Power Dissipation Derating Curve
Maximum Safe Operating Area
–2
–102
Drain Current ID (A)
80
60
40
20
0
Drain Current ID (A)
–20
Drain-Source On-State Voltage VDS(ON) (V)
50
100
200
150
–101
100µs
–7
–5
–3
–2
1ms
–100
10ms
Output Characteristics (Typical)
Tc = 25°C
– 8V Pulse Test
– 6V
– 4V
– 3V
–8
PD = 70W
– 2.5V
–4
–2
–4
–6
–8
–10
VGS= –10V
– 8V
Tc = 25°C
Pulse Test
–8
– 6V
– 4V
– 3V
–6
– 2.5V
–4
–2
0
–10
0
–1.0
–2.0
–3.0
– 4.0
Drain-Source Voltage VDS (V)
Drain-Source Voltage VDS (V)
On-State Voltage vs.
Gate-Source Voltage (Typical)
On-State Resistance vs.
Drain Current (Typical)
–10
ID = – 30A
–8
–6
– 20A
–4
–10A
–2
Tc = 25°C
Pulse Test
0
DC
Output Characteristics (Typical)
VGS =
–10V
0
Tc = 25°C
Drain-Source Voltage VDS (V)
–12
0
tw = 10µs
Case Temperature Tc (°C)
–16
0
–3
–2
–3 Single Pulse
–2
–2 –3 –5–7–101 –2 –3 –5–7–102 –2 –3 –5–7–103 –2
Drain Current ID (A)
0
–7
–5
–7
–5
–2
–4
–6
–8
Gate-Source Voltage VGS (V)
Rev.1.00, Aug.20.2004, page 3 of 6
–10
Drain-Source On-State Resistance rDS(ON) (Ω)
Drain Power Dissipation PD (W)
100
–5.0
0.5
Tc = 25°C
Pulse Test
0.4
VGS= – 4V
0.3
–10V
0.2
0.1
0 0
–10
–2 –3
–5 –7 –101
–2 –3
Drain Current ID (A)
–5 –7 –102
FX20VSJ-3
Forward Transfer Admittance vs.
Drain Current (Typical)
Drain Current ID (A)
– 50
Tc = 25°C
VDS = –10V
– 40 Pulse Test
– 30
– 20
–10
0
–2
0
–4
–6
–8
–10
Forward Transfer Admittance | yfs | (S)
Transfer Characteristics (Typical)
Tc = 25°C
75°C
125°C
3
2
101
7
5
3
2
100 0
–10
–5 –7 –101
–2 –3
–5 –7 –102
Capacitance vs.
Drain-Source Voltage (Typical)
Switching Characteristics (Typical)
103
7 Tch = 25°C, VDD = – 80V
VGS = –10V, RGEN = RGS = 50Ω
5
103
7
5
3
2
Coss
102
7
5
Crss
Tch = 25°C
f = 1MHz
VGS = 0V
3
2
101 0
–10
–2 –3
Switching Time (ns)
Ciss
3
2
3
td(off)
2
tf
102
7
5
tr
3
td(on)
2
–5 –7 –101
101 0
–10
–5 –7 –102
–2 –3
–5 –7 –101
–2 –3
–5 –7
Drain Current ID (A)
Gate-Source Voltage vs.
Gate Charge (Typical)
Source-Drain Diode Forward
Characteristics (Typical)
–20
Tc = 25°C
Pulse Test
–8
V DS = – 50V
– 80V
–100V
–6
–4
–2
20
40
60
80
Gate Charge Qg (nC)
Rev.1.00, Aug.20.2004, page 4 of 6
100
Source Current IS (A)
Tch = 25°C
ID = – 20A
0
–2 –3
Drain-Source Voltage VDS (V)
–10
0
–2 –3
Drain Current ID (A)
7
5
Capacitance (pF)
VDS = –10V
Pulse Test
7
5
Gate-Source Voltage VGS (V)
104
Gate-Source Voltage VGS (V)
102
–16
Tc = 125°C
75°C
25°C
–12
–8
–4
0
0
– 0.4
– 0.8
–1.2
–1.6
Source-Drain Voltage VSD (V)
–2.0
On-State Resistance vs.
Channel Temperature (Typical)
Gate-Source Threshold Voltage VGS(th) (V)
Drain-Source On-State Resistance rDS(ON) (25°C)
Drain-Source On-State Resistance rDS(ON) (t°C)
FX20VSJ-3
101
7
5
VGS = –10V
ID = 1/2 ID
Pulse Test
3
2
100
7
5
3
2
10–1
–50
0
50
100
150
Threshold Voltage vs.
Channel Temperature (Typical)
– 4.0
VDS = –10V
ID = –1mA
– 3.2
– 2.4
–1.6
– 0.8
0
VGS = 0V
ID = –1mA
1.2
1.0
0.8
0.6
0.4
–50
0
50
100
150
Transient Thermal Impedance Zth(ch-c) (°C/W)
Drain-Source Breakdown Voltage V(BR)DSS (t°C)
Drain-Source Breakdown Voltage V(BR)DSS (25°C)
1.4
0
150
101
7
5
3
D = 1.0
2
100
0.5
7 0.2
5
3
2
10–1
7
5
3
2
0.1
0.05
0.02
0.01
Single Pulse
PDM
tw
T
D = tw
T
10–2 –4
10 2 3 5 710–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
Pulse Width tw (s)
Switching Time Measurement Circuit
Vout
Monitor
100
Transient Thermal Impedance Characteristics
Channel Temperature Tch (°C)
Vin Monitor
50
Channel Temperature Tch (°C)
Channel Temperature Tch (°C)
Breakdown Voltage vs.
Channel Temperature (Typical)
–50
Switching Waveform
Vin
10%
D.U.T.
RGEN
RL
90%
RGS
VDD
Vout
td(on)
Rev.1.00, Aug.20.2004, page 5 of 6
90%
90%
10%
10%
tr
td(off)
tf
FX20VSJ-3
Package Dimensions
TO-220S
EIAJ Package Code

JEDEC Code

Mass (g) (reference value)
Lead Material
1.2
Cu alloy
10.5 max
1.3
9.8 ± 0.5
0
+0.3
-0
(1.5)
3.0
+0.3
- 0.5
1.5 max
8.6 ± 0.3
1.5 max
4.5
1
5
0.5
4.5
0.8
Symbol
Dimension in Millimeters
Min
Typ
Max
2.6 ± 0.4
A
A1
A2
b
D
E
e
x
y
y1
ZD
ZE
Note 1) The dimensional figures indicate representative values unless
otherwise the tolerance is specified.
Order Code
Lead form
Surface-mounted type
Surface-mounted type
Standard packing
Taping
Plastic Magazine
(Tube)
Straight type
Quantity
1000
50
Standard order code
Type name – T +Direction (1 or 2) +1
Type name
Plastic Magazine
50 Type name +A1
(Tube)
Note : Please confirm the specification about the shipping in detail.
Rev.1.00, Aug.20.2004, page 6 of 6
Standard order
code example
FS20VSJ-3-T11
FS20VSJ-3
FS20VSJ-3-A1
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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