To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Renesas Electronics website: http://www.renesas.com April 1st, 2010 Renesas Electronics Corporation Issued by: Renesas Electronics Corporation (http://www.renesas.com) Send any inquiries to http://www.renesas.com/inquiry. Notice 1. 2. 3. 4. 5. 6. 7. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. 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The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices and power devices. Renesas Technology Corp. Customer Support Dept. April 1, 2003 MITSUBISHI Nch POWER MOSFET FS30ASJ-03 HIGH-SPEED SWITCHING USE FS30ASJ-03 OUTLINE DRAWING Dimensions in mm 0.5 ± 0.1 1.5 ± 0.2 6.5 5.0 ± 0.2 2.3 2.3 10MAX. 2.3MIN. 1.0 A 0.5 ± 0.2 0.8 2.3 0.9MAX. 1.0MAX. 5.5 ± 0.2 r q w e wr ¡4V DRIVE ¡VDSS .................................................................................. 30V ¡rDS (ON) (MAX) .............................................................. 38mΩ ¡ID ......................................................................................... 30A ¡Integrated Fast Recovery Diode (TYP.) ............. 45ns q GATE w DRAIN e SOURCE r DRAIN q e MP-3 APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc. MAXIMUM RATINGS Symbol (Tc = 25°C) Ratings Unit VDSS Drain-source voltage VGS = 0V 30 V VGSS ID Gate-source voltage Drain current VDS = 0V ±20 30 V A IDM IDA Drain current (Pulsed) Avalanche drain current (Pulsed) 120 30 A A IS ISM Source current Source current (Pulsed) 30 120 A A PD Tch Maximum power dissipation Channel temperature 30 –55 ~ +150 W °C –55 ~ +150 °C 0.26 g Tstg — Parameter Conditions L = 30µH Storage temperature Weight Typical value Feb.1999 MITSUBISHI Nch POWER MOSFET FS30ASJ-03 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS (Tch = 25°C) Symbol Parameter V (BR) DSS IGSS Drain-source breakdown voltage Gate-source leakage current IDSS VGS (th) Drain-source leakage current Gate-source threshold voltage rDS (ON) Drain-source on-state resistance rDS (ON) VDS (ON) Drain-source on-state resistance Drain-source on-state voltage y fs Ciss Forward transfer admittance Input capacitance Coss Crss Output capacitance Reverse transfer capacitance td (on) tr Turn-on delay time Rise time td (off) Turn-off delay time tf VSD Fall time Source-drain voltage Rth (ch-c) trr Thermal resistance Reverse recovery time Limits Test conditions Unit Min. Typ. Max. 30 — — — — ±0.1 V µA — 1.0 — 1.5 0.1 2.0 mA V — 29 38 mΩ — — 44 0.435 73 0.57 mΩ V — — 15 800 — — S pF — — 250 110 — — pF pF — — 14 55 — — ns ns — 65 — ns — — 60 1.0 — 1.5 ns V — — — 45 4.17 — °C/W ns ID = 1mA, VGS = 0V VGS = ±20V, VDS = 0V VDS = 30V, VGS = 0V ID = 1mA, VDS = 10V ID = 15A, VGS = 10V ID = 15A, VGS = 4V ID = 15A, VGS = 10V ID = 15A, VDS = 5V VDS = 10V, VGS = 0V, f = 1MHz VDD = 15V, I D = 15A, VGS = 10V, RGEN = RGS = 50Ω IS = 15A, VGS = 0V Channel to case IS = 15A, dis/dt = –50A/µs PERFORMANCE CURVES DRAIN CURRENT ID (A) 40 30 20 10 0 0 50 100 150 200 102 7 5 3 2 tw = 10ms 100ms 101 7 5 3 2 100 7 5 3 2 1ms TC = 25°C Single Pulse 10ms DC 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 CASE TEMPERATURE TC (°C) DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) 50 VGS = 10V 8V 40 20 Tc = 25°C Pulse Test 6V DRAIN CURRENT ID (A) MAXIMUM SAFE OPERATING AREA 2 DRAIN CURRENT ID (A) POWER DISSIPATION PD (W) POWER DISSIPATION DERATING CURVE 50 4V 30 20 3V 10 PD = 30W VGS = 10V 8V 6V 4V 16 3V PD = 30W 12 2.5V 8 2V 4 Tc = 25°C Pulse Test 2V 0 0 1.0 2.0 3.0 4.0 5.0 DRAIN-SOURCE VOLTAGE VDS (V) 0 0 0.4 0.8 1.2 1.6 2.0 DRAIN-SOURCE VOLTAGE VDS (V) Feb.1999 MITSUBISHI Nch POWER MOSFET FS30ASJ-03 HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 50 Tc = 25°C Pulse Test DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (mΩ) DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) 5.0 ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 4.0 3.0 2.0 ID = 50A 1.0 30A Tc = 25°C Pulse Test VGS = 4V 40 30 10V 20 10 10A 0 2 4 6 TRANSFER CHARACTERISTICS (TYPICAL) FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) FORWARD TRANSFER ADMITTANCE yfs (S) DRAIN CURRENT ID (A) Tc = 25°C VDS = 10V Pulse Test 24 16 8 0 2 4 6 VDS = 5V Pulse Test TC = 25°C 75°C 2 125°C 101 7 5 4 3 8 100 0 10 10 2 3 4 5 7 101 2 3 4 5 7 102 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) SWITCHING CHARACTERISTICS (TYPICAL) Tch = 25°C f = 1MHZ VGS = 0V 104 7 5 3 2 102 7 5 3 2 102 7 5 4 3 2 2 103 7 5 3 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN CURRENT ID (A) 32 0 0 10 GATE-SOURCE VOLTAGE VGS (V) 40 CAPACITANCE Ciss, Coss, Crss (pF) 8 Ciss Coss Crss SWITCHING TIME (ns) 0 102 7 5 4 3 2 td(off) tf tr td(on) 101 7 5 4 3 Tch = 25°C VDD = 15V VGS = 10V RGEN = RGS = 50Ω 2 3 5 7100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN-SOURCE VOLTAGE VDS (V) 100 0 10 2 3 4 5 7 101 2 3 4 5 7 102 DRAIN CURRENT ID (A) Feb.1999 MITSUBISHI Nch POWER MOSFET FS30ASJ-03 HIGH-SPEED SWITCHING USE SOURCE CURRENT IS (A) Tch = 25°C ID = 30A 8 6 VDS = 10V 20V 4 25V 2 0 4 8 12 16 30 20 0 0.4 0.8 1.2 1.6 2.0 GATE CHARGE Qg (nC) SOURCE-DRAIN VOLTAGE VSD (V) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 4.0 2 100 7 5 4 3 2 –50 0 50 100 VDS = 10V ID = 1mA 3.2 2.4 1.6 0.8 0 150 CHANNEL TEMPERATURE Tch (°C) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 VGS = 0V ID = 1mA 1.2 1.0 0.8 0.6 0.4 TC = 125°C 75°C 25°C 10 0 101 7 VGS = 10V ID = 1/2ID 5 Pulse Test 4 3 10–1 VGS = 0V Pulse Test 40 20 GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C) 50 10 0 DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) TRANSIENT THERMAL IMPEDANCE Zth (ch–c) (°C/W) GATE-SOURCE VOLTAGE VGS (V) GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 102 7 5 3 2 101 7 5 3 2 100 7 5 3 2 D = 1.0 0.5 PDM 0.2 tw 0.1 0.05 0.02 0.01 Single Pulse T D= tw T 10–1 –4 10 2 3 5710–3 2 3 5710–22 3 5710–12 3 57100 2 3 57101 2 3 57102 PULSE WIDTH tw (s) Feb.1999