Renesas FS30VS-06 Mitsubishi nch power mosfet Datasheet

To all our customers
Regarding the change of names mentioned in the document, such as Mitsubishi
Electric and Mitsubishi XX, to Renesas Technology Corp.
The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)
Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi
Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names
have in fact all been changed to Renesas Technology Corp. Thank you for your understanding.
Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been
made to the contents of the document, and these changes do not constitute any alteration to the
contents of the document itself.
Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices
and power devices.
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
MITSUBISHI Nch POWER MOSFET
FS30VS-06
HIGH-SPEED SWITCHING USE
OUTLINE DRAWING
r
Dimensions in mm
4.5
1.5MAX.
10.5MAX.
3.0 –0.5
+0.3
1.5MAX.
8.6 ± 0.3
9.8 ± 0.5
1.3
+0.3
0 –0
(1.5)
FS30VS-06
1
B
5
0.5
q w e
wr
¡10V DRIVE
¡VDSS .................................................................................. 60V
¡rDS (ON) (MAX) .............................................................. 30mΩ
¡ID ......................................................................................... 30A
¡Integrated Fast Recovery Diode (TYP.) .............. 65ns
2.6 ± 0.4
4.5
0.8
q GATE
w DRAIN
e SOURCE
r DRAIN
q
e
TO-220S
APPLICATION
Motor control, Lamp control, Solenoid control
DC-DC converter, etc.
MAXIMUM RATINGS
Symbol
(Tc = 25°C)
Ratings
Unit
VDSS
Drain-source voltage
VGS = 0V
60
V
VGSS
ID
Gate-source voltage
Drain current
VDS = 0V
±20
30
V
A
IDM
IDA
Drain current (Pulsed)
Avalanche drain current (Pulsed)
120
30
A
A
IS
ISM
Source current
Source current (Pulsed)
30
120
A
A
PD
T ch
Maximum power dissipation
Channel temperature
45
–55 ~ +150
W
°C
–55 ~ +150
°C
g
T stg
—
Parameter
Conditions
L = 100µH
Storage temperature
Weight
Typical value
1.2
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS30VS-06
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS
(Tch = 25°C)
Symbol
Parameter
V (BR) DSS
IGSS
Drain-source breakdown voltage
Gate-source leakage current
IDSS
VGS (th)
Drain-source leakage current
Gate-source threshold voltage
rDS (ON)
Drain-source on-state resistance
VDS (ON)
y fs
Drain-source on-state voltage
Forward transfer admittance
Ciss
Coss
Input capacitance
Output capacitance
Crss
td (on)
Reverse transfer capacitance
Turn-on delay time
tr
td (off)
Rise time
Turn-off delay time
tf
Fall time
VSD
Rth (ch-c)
Source-drain voltage
Thermal resistance
trr
Reverse recovery time
Limits
Test conditions
ID = 1mA, VGS = 0V
VGS = ±20V, VDS = 0V
VDS = 60V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 15A, VGS = 10V
Unit
Min.
Typ.
Max.
60
—
—
—
—
±0.1
V
µA
—
2.0
—
3.0
0.1
4.0
mA
V
—
23
30
mΩ
ID = 15A, VDS = 10V
—
14
0.345
20
0.450
—
V
S
VDS = 10V, VGS = 0V, f = 1MHz
—
—
1250
310
—
—
pF
pF
—
—
150
20
—
—
pF
ns
—
—
50
60
—
—
ns
ns
ID = 15A, VGS = 10V
VDD = 30V, ID = 15A, VGS = 10V, RGEN = RGS = 50Ω
IS = 15A, VGS = 0V
Channel to case
IS = 30A, dis/dt = –100A/µs
—
60
—
ns
—
—
1.0
—
1.5
2.77
—
65
—
V
°C/W
ns
PERFORMANCE CURVES
40
30
20
10
0
50
MAXIMUM SAFE OPERATING AREA
3
2
DRAIN CURRENT ID (A)
POWER DISSIPATION PD (W)
POWER DISSIPATION DERATING CURVE
50
0
50
100
150
200
102
7
5
3
2
tw = 10ms
101
7
5
3
2
100ms
1ms
10ms
100
DC
7 TC = 25°C
5 Single Pulse
3
3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3
CASE TEMPERATURE TC (°C)
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
OUTPUT CHARACTERISTICS
(TYPICAL)
VGS = 20V 10V
30
VGS = 20V
TC = 25°C
Pulse Test
40
TC = 25°C
Pulse Test
30
5V
20
10
0
PD = 45W
4V
0
2
4
6
8
10
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN CURRENT ID (A)
DRAIN CURRENT ID (A)
6V
10V
24
6V
5V
18
PD = 45W
12
6
4V
0
0
1
2
3
4
5
DRAIN-SOURCE VOLTAGE VDS (V)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS30VS-06
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
TC = 25°C
Pulse Test
4.0
3.0
2.0
ID = 60A
1.0
30A
50
DRAIN-SOURCE ON-STATE
RESISTANCE rDS (ON) (mΩ)
DRAIN-SOURCE ON-STATE
VOLTAGE VDS (ON) (V)
5.0
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
TC = 25°C
Pulse Test
40
30
VGS = 10V
20V
20
10
10A
0
4
8
12
DRAIN CURRENT ID (A)
TRANSFER CHARACTERISTICS
(TYPICAL)
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
FORWARD TRANSFER
ADMITTANCE yfs (S)
DRAIN CURRENT ID (A)
TC = 25°C
VDS = 10V
Pulse Test
80
60
40
20
0
102
VDS = 10V
7
Pulse Test
5
4
3
TC = 25°C
2
75°C
101
7
5
4
3
125°C
2
0
4
8
12
16
100 0
10
20
2 3 4 5 7 101
2 3 4 5 7 102
GATE-SOURCE VOLTAGE VGS (V)
DRAIN CURRENT ID (A)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
SWITCHING CHARACTERISTICS
(TYPICAL)
104
7
5
3
2
Ciss
103
7
5
3
2
Coss
Crss
102
7
5
3 Tch = 25°C
2 f = 1MHZ
101
0
7 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7
20
GATE-SOURCE VOLTAGE VGS (V)
100
CAPACITANCE
Ciss, Coss, Crss (pF)
16
VGS = 0V
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
DRAIN-SOURCE VOLTAGE VDS (V)
SWITCHING TIME (ns)
0
103
7
5
4
3
Tch = 25°C
VDD = 30V
VGS = 10V
RGEN = RGS = 50Ω
2
102 td(off)
7
5 tf
4
3
td(on)
2
tr
101
100
2 3 4 5 7 101
2 3 4 5 7 102
DRAIN CURRENT ID (A)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS30VS-06
HIGH-SPEED SWITCHING USE
20
SOURCE CURRENT IS (A)
VDS = 10V
12
20V
8
40V
4
0
10
20
30
40
30
75°C
25°C
10
0
0.4
0.8
1.2
1.6
2.0
GATE CHARGE Qg (nC)
SOURCE-DRAIN VOLTAGE VSD (V)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
5.0
2
100
7
5
4
3
2
–50
0
50
100
VDS = 10V
ID = 1mA
4.0
3.0
2.0
1.0
0
150
CHANNEL TEMPERATURE Tch (°C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
1.4
VGS = 0V
ID = 1mA
1.2
1.0
0.8
0.6
0.4
TC = 125°C
20
0
101
7 VGS = 10V
ID = 1/2ID
5 Pulse Test
4
3
10–1
VGS = 0V
Pulse Test
40
50
GATE-SOURCE THRESHOLD
VOLTAGE VGS (th) (V)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C)
50
Tch = 25°C
ID = 30A
16
0
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C)
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
TRANSIENT THERMAL IMPEDANCE Zth (ch–c) (°C/W)
GATE-SOURCE VOLTAGE VGS (V)
GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
101
7
5
D = 1.0
3
2 0.5
100 0.2
7 0.1
5
3
2
10–1
7
5
3
2
0.05
0.02
0.01
Single Pulse
PDM
tw
T
D= tw
T
10–2 –4
10 2 3 5710–3 2 3 5710–22 3 5710–12 3 57100 2 3 57101 2 3 57102
PULSE WIDTH tw (s)
Feb.1999
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