MITSUBISHI Nch POWER MOSFET FS3KM-9 HIGH-SPEED SWITCHING USE FS3KM-9 OUTLINE DRAWING Dimensions in mm 3 ± 0.3 6.5 ± 0.3 2.8 ± 0.2 φ 3.2 ± 0.2 3.6 ± 0.3 14 ± 0.5 15 ± 0.3 10 ± 0.3 1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15 w 2.6 ± 0.2 1 2 3 ¡VDSS ................................................................................ 450V ¡rDS (ON) (MAX) ................................................................. 3.5Ω ¡ID ............................................................................................ 3A ¡Viso ................................................................................ 2000V 0.75 ± 0.15 2.54 ± 0.25 4.5 ± 0.2 2.54 ± 0.25 q GATE w DRAIN e SOURCE q e TO-220FN APPLICATION SMPS, DC-DC Converter, battery charger, power supply of printer, copier, HDD, FDD, TV, VCR, personal computer etc. MAXIMUM RATINGS Symbol VDSS VGSS ID IDM PD Tch Tstg Viso — (Tc = 25°C) Parameter Drain-source voltage Gate-source voltage Conditions VGS = 0V VDS = 0V Drain current Drain current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Isolation voltage Weight AC for 1minute, Terminal to case Typical value Ratings Unit 450 ±30 3 V V A 9 30 –55 ~ +150 –55 ~ +150 A W °C °C 2000 2.0 Vrms g Feb.1999 MITSUBISHI Nch POWER MOSFET FS3KM-9 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS (Tch = 25°C) Symbol Parameter V (BR) DSS Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakage current Drain-source leakage current ID = 1mA, VGS = 0V IG = ±100µA, VDS = 0V VGS = ±25V, VDS = 0V VDS = 450V, VGS = 0V Gate-source threshold voltage Drain-source on-state resistance ID = 1mA, VDS = 10V ID = 1A, VGS = 10V ID = 1A, VGS = 10V ID = 1A, VDS = 10V V (BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Drain-source on-state voltage Forward transfer admittance Input capacitance Coss Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Crss td (on) tr td (off) tf VDS = 25V, VGS = 0V, f = 1MHz VDD = 200V, ID = 1A, VGS = 10V, RGEN = RGS = 50Ω Turn-off delay time Fall time Source-drain voltage VSD Rth (ch-c) Limits Test conditions IS = 1A, VGS = 0V Channel to case Thermal resistance Unit Min. Typ. 450 ±30 — — — — Max. — — ±10 — 2 — — — 3 2.7 2.7 1 4 3.5 3.5 mA V Ω V 1.0 — — — 1.5 300 35 6 — — — — S pF pF pF — — — — 13 10 30 30 — — — — ns ns ns ns — 1.5 2.0 V — — 4.17 °C/W V V µA PERFORMANCE CURVES 40 30 20 10 0 MAXIMUM SAFE OPERATING AREA DRAIN CURRENT ID (A) POWER DISSIPATION PD (W) POWER DISSIPATION DERATING CURVE 50 0 50 100 150 tw=10µs 100µs 100 7 5 3 2 1ms 10ms 10–1 7 5 3 2 10–2 200 DC TC = 25°C Single Pulse 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 2 CASE TEMPERATURE TC (°C) DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) 10 5 TC = 25°C Pulse Test PD = 30W 8 6 VGS=20V 10V 8V 4 6V 2 DRAIN CURRENT ID (A) PD = 30W DRAIN CURRENT ID (A) 101 7 5 3 2 TC = 25°C Pulse Test VGS=20V 10V 8V 4 3 6V 2 1 5V 5V 0 0 10 20 30 40 50 DRAIN-SOURCE VOLTAGE VDS (V) 0 0 4 8 12 16 20 DRAIN-SOURCE VOLTAGE VDS (V) Feb.1999 MITSUBISHI Nch POWER MOSFET FS3KM-9 HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 10 32 24 ID=4A 16 3A 8 2A 1A 0 4 8 12 DRAIN CURRENT ID (A) 6 4 2 TRANSFER CHARACTERISTICS (TYPICAL) FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) 101 7 5 6 4 2 4 8 12 16 TC=25°C 100 7 5 125°C 75°C 3 2 10–1 –1 10 20 VDS=10V Pulse Test 3 2 2 3 5 7 100 2 3 5 7 101 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) SWITCHING CHARACTERISTICS (TYPICAL) 7 5 5 3 2 3 2 Ciss 102 7 5 3 2 20V 0 10–2 2 3 5 7 10–1 2 3 5 7 100 2 3 5 7 101 20 TC=25°C VDS=50V Pulse Test 0 VGS=10V 8 DRAIN CURRENT ID (A) 8 0 TC=25°C Pulse Test GATE-SOURCE VOLTAGE VGS (V) 10 CAPACITANCE Ciss, Coss, Crss (pF) 16 FORWARD TRANSFER ADMITTANCE yfs (S) 0 DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (Ω) TC=25°C Pulse Test Coss 101 7 Crss 5 Tch=25°C f=1MHz 3 VGS=0V 2 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 DRAIN-SOURCE VOLTAGE VDS (V) SWITCHING TIME (ns) DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) 40 tf 102 7 5 3 2 101 7 5 10–1 Tch = 25°C VDD = 200V VGS = 10V RGEN = RGS = 50Ω td(off) td(on) tr 2 3 5 7 100 2 3 5 7 101 DRAIN CURRENT ID (A) Feb.1999 MITSUBISHI Nch POWER MOSFET FS3KM-9 HIGH-SPEED SWITCHING USE GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) 12 200V 400V 8 4 101 7 5 4 8 12 16 75°C 4 2 0 0.8 1.6 2.4 3.2 4.0 SOURCE-DRAIN VOLTAGE VSD (V) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 5.0 VGS = 10V ID = 1/2ID Pulse Test 100 7 5 3 2 –50 0 50 100 BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 VGS = 0V ID = 1mA 1.2 1.0 0.8 0.6 –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) VDS = 10V ID = 1mA 4.0 3.0 2.0 1.0 0 150 CHANNEL TEMPERATURE Tch (°C) 0.4 25°C 6 GATE CHARGE Qg (nC) 3 2 10–1 8 0 20 GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C) DRAIN-SOURCE BREAKDOWN VOLTAGE VBR (DSS) (t°C) VDS = 100V 0 VGS = 0V Pulse Test TC=125°C SOURCE CURRENT IS (A) 16 0 DRAIN-SOURCE BREAKDOWN VOLTAGE VBR (DSS) (25°C) 10 Tch = 25°C ID = 3A –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) TRANSIENT THERMAL IMPEDANCE Zth (ch–c) (°C/W) GATE-SOURCE VOLTAGE VGS (V) 20 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101 7 5 D=1 3 0.5 2 0.2 100 7 0.1 5 3 2 10–1 7 5 3 2 0.05 0.02 0.01 Single Pulse PDM tw T D= tw T 10–2 10–4 2 3 5710–3 2 3 5710–22 3 5710–12 3 57100 2 3 57101 2 3 57102 PULSE WIDTH tw (s) Feb.1999